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Texas Instruments UCC21225 | Demoboard PMP23332
Interleaved and multiphase inverting buck-boost converter reference design
Details
| Topologie | Aufwärtswandler |
| Eingangsspannung | -62 - -36 V |
| Ausgang 1 | 52 V / 14 A |
| IC-Revision | A |
Beschreibung
This reference design uses the UCD3138064A as a digital controller to control inverting buck-boost with the capability of supporting two-phase peak current mode control. The soft-switching technology is used in this design to improve the power efficiency. The input voltage range is -62 V to -36 V. The output voltage range is adjustable from 28 V to 52 V. The default output voltage is 48-V with a maximum current of 14 A.
Eigenschaften
- High efficiency above 97.1%
- Interleaved two-phase peak current mode (PCM) control
- Three phases with voltage mode (VM) control
- Zero voltage switching of MOSFETs
- Pre-biased start up
- Current balancing between phases
Typische Anwendungen
- Non-isolated battery backup unit
- Transformer-based DC/DC converter (100W~400W)
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(nH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | fres(MHz) | Drahttype | LR(nH) | IR(A) | RDC(mΩ) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCM SMT-Hochstrominduktivität, 330 nH, 56 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCM SMT-Hochstrominduktivität | Induktivität330 nH | Performance Nennstrom56 A | Sättigungsstrom 144.9 A | Sättigungsstrom @ 30%48.9 A | – | Eigenresonanzfrequenz28 MHz | – | Nenninduktivität325 nH | Nennstrom38 A | Gleichstromwiderstand0.32 mΩ | MaterialMnZn | ||||
 | WE-HCM SMT-Hochstrominduktivität, 400 nH, 54.3 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCM SMT-Hochstrominduktivität | Induktivität400 nH | Performance Nennstrom54.3 A | Sättigungsstrom 123.8 A | Sättigungsstrom @ 30%28.3 A | – | Eigenresonanzfrequenz25 MHz | – | Nenninduktivität345 nH | Nennstrom25 A | Gleichstromwiderstand0.37 mΩ | MaterialMnZn | ||||
 | WE-HCF SMT-Hochstrominduktivität, 10000 nH, 34.95 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCF SMT-Hochstrominduktivität | Induktivität10000 nH | Performance Nennstrom34.95 A | Sättigungsstrom 132.6 A | Sättigungsstrom @ 30%37 A | Gleichstromwiderstand2.64 mΩ | Eigenresonanzfrequenz13 MHz | DrahttypeFlach | Nenninduktivität9500 nH | Nennstrom35 A | Gleichstromwiderstand2.4 mΩ | MaterialMnZn | ||||
| WE-HCF SMT-Hochstrominduktivität, 22000 nH, 34.95 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCF SMT-Hochstrominduktivität | Induktivität22000 nH | Performance Nennstrom34.95 A | Sättigungsstrom 115.5 A | Sättigungsstrom @ 30%18 A | Gleichstromwiderstand2.64 mΩ | Eigenresonanzfrequenz9 MHz | DrahttypeFlach | Nenninduktivität5000 nH | Nennstrom35 A | Gleichstromwiderstand2.4 mΩ | MaterialMnZn |