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Texas Instruments TPS560200 | Demoboard TIDA-00202
4.5V to 17V Input, 500mA Synchronous Step Down SWIFT™ Converterwith Advanced Eco-mode™
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 12 V |
| Ausgang 1 | 5 V |
| IC-Revision | E1 |
Beschreibung
The TPS560200 is an 17V, 500mA, low Iq, adaptive on-time D-CAP2 mode synchronous monolithic buck converter with integrated MOSFETs in easy-to-use 5-pin SOT23 package.
The TPS560200 enables system designers to complete the suite of various end-equipment power bus regulators with a cost effective, low component count and low standby current solution. The main control loop for the device uses the D-CAP2™ mode control that provides a fast transient response with no external compensation components. The adaptive on-time control supports seamless transition between PWM mode at higher load conditions and advanced Eco-mode™ operation at light loads.
The TPS560200 also has a proprietary circuit that enables the device to adopt to both low equivalent series resistance (ESR) output capacitors, such as POSCAP or SP-CAP, and ultra-low ESR ceramic capacitors. The device operates from 4.5-V to 17-V VIN input. The output voltage can be programmed between 0.8 V and 6.5 V. The device also features a fixed 2 ms soft start time. The device is available in the 5-pin SOT23 package.
Eigenschaften
Integrated Monolithic 0.95ΩHigh Side and 0.33Ω Low Side MOSFETs
500mA Continuous Output Current
Output Voltage Range: 0.8V to 6.5V
0.8V Voltage Reference with
±1.3% Accuracy Over Temperature
Advanced Auto-Skip Eco-mode for
High Efficiency at Light Loads
D-CAP2™ Mode Enables Fast
Transient Responses
No External Compensation Needed
600 kHz Switching Frequency
2 ms Internal Soft Start
Safe Startup into Pre-biased VOUT
Thermal Shutdown
–40°C to 125°C Operating
Junction Temperature Range
Available in 5-Pin SOT23 Packages
Typische Anwendungen
- Modems
- Set Top Boxes
- ASDLs
- DTBs
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR(V (DC)) | Bauform | Betriebstemperatur | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | Fl(mm) | Verpackung | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | fres(MHz) | VOP(V) | Montageart | ISAT(A) | RDC max.(mΩ) | Version | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR(mA) | Z @ 1 GHz(Ω) | H(mm) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 25 V(DC), 680 pF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 25 V(DC) | Kapazität680 pF | Kapazität±10% | Nennspannung25 V (DC) | Bauform0805 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor3.5 % | Isolationswiderstand10 GΩ | KeramiktypX7R Klasse II | Länge2 mm | Breite1.25 mm | Pad Dimension0.5 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Höhe0.8 mm | – | |||||
| WCAP-CSGP MLCCs 25 V(DC), 100 nF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 25 V(DC) | Kapazität100 nF | Kapazität±10% | Nennspannung25 V (DC) | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor3.5 % | Isolationswiderstand5 GΩ | KeramiktypX7R Klasse II | Länge1.6 mm | Breite0.8 mm | Pad Dimension0.4 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Höhe0.8 mm | – | |||||
| WCAP-CSGP MLCCs 25 V(DC), 10 µF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 25 V(DC) | Kapazität10 µF | Kapazität±10% | Nennspannung25 V (DC) | Bauform1206 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor10 % | Isolationswiderstand0.01 GΩ | KeramiktypX7R Klasse II | Länge3.2 mm | Breite1.6 mm | Pad Dimension0.5 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Höhe1.6 mm | – | |||||
 | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | – | – | – | Länge1.6 mm | Breite0.8 mm | Pad Dimension0.3 mm | – | – | – | – | Gleichstromwiderstand8.5 mΩ | – | – | MontageartSMT | – | Gleichstromwiderstand15 mΩ | VersionSMT | Impedanz @ 100 MHz60 Ω | Maximale Impedanz99 Ω | Maximale Impedanz458 MHz | Nennstrom5100 mA | Impedanz @ 1 GHz74 Ω | Höhe0.8 mm | TypHochstrom | ||||
 | WE-TPC SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TPC SMT-Speicherdrossel | – | – | – | Bauform1028 | Betriebstemperatur -40 °C up to +125 °C | – | – | – | Länge10 mm | Breite10 mm | – | – | Induktivität100 µH | – | – | Gleichstromwiderstand365 mΩ | Eigenresonanzfrequenz7 MHz | – | MontageartSMT | Sättigungsstrom0.9 A | Gleichstromwiderstand470 mΩ | VersionSMT | – | – | – | Nennstrom1000 mA | – | Höhe2.8 mm | – | ||||
 | WE-PD SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | – | – | – | Bauform1050 | Betriebstemperatur -40 °C up to +150 °C | – | – | – | Länge10 mm | Breite10 mm | – | – | Induktivität33 µH | – | – | Gleichstromwiderstand66 mΩ | Eigenresonanzfrequenz11.1 MHz | Betriebsspannung120 V | MontageartSMT | Sättigungsstrom2.9 A | Gleichstromwiderstand79 mΩ | VersionPerformance | – | – | – | Nennstrom2500 mA | – | Höhe5 mm | – | ||||
 | WE-MAPI SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | – | – | – | Bauform3012 | Betriebstemperatur -40 °C up to +125 °C | – | – | – | Länge3 mm | Breite3 mm | – | – | Induktivität6.8 µH | Performance Nennstrom1.4 A | Sättigungsstrom @ 30%3.5 A | Gleichstromwiderstand368.2 mΩ | Eigenresonanzfrequenz25 MHz | Betriebsspannung80 V | MontageartSMT | Sättigungsstrom2.7 A | Gleichstromwiderstand423.4 mΩ | VersionSMT | – | – | – | Nennstrom880 mA | – | Höhe1.2 mm | – |