IC-Hersteller Texas Instruments
IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (335)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (96)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (57)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 7-42 V |
| Schaltfrequenz | 100-2500 kHz |
| Ausgang 1 | 5 V / 5 A |
| IC-Revision | B |
Beschreibung
The TPS54540 is a 42 V, 5 A, step down regulator with an integrated high side MOSFET. The device survives load dump pulses up to 45V per ISO 7637. Current mode control provides simple external compensation and flexible component selection. A low ripple pulse skip mode reduces the no load supply current to 146 μA.Shutdown supply current is reduced to 2 μA when the enable pin is pulled low.Undervoltage lockout is internally set at 4.3 V but can be increased using the enable pin. The output voltage start up ramp is internally controlled to provide a controlled start up and eliminate overshoot.A wide switching frequency range allows either efficiency or external component size to be optimized. Output current is limited cycle-by-cycle. Frequency foldback and thermal shutdown protects internal and externalcomponents during an overload condition.The TPS54540 is available in an 8-pin thermally enhanced HSOIC PowerPAD™ package.
Eigenschaften
- High Efficiency at Light Loads with Pulse Skipping Eco-mode™
- 92-mΩHigh-Side MOSFET
- 146 μA Operating Quiescent Current and 2 μA Shutdown Current
- 100 kHz to 2.5 MHz Fixed Switching Frequency
- Synchronizes to External Clock
- Low Dropout at Light Loads with Integrated BOOT Recharge FET
- Adjustable UVLO Voltage and Hysteresis
- 0.8 V 1% Internal Voltage Reference
- 8-Pin HSOIC with PowerPAD™ Package
- –40°C to 150°C TJ Operating Range
- Supported by WEBENCH™ Software Tool
REMARK:L2=1.5uH used referhttp://www.ti.com/lit/ug/slvu973/slvu973.pdfpage no 3
Typische Anwendungen
- GPS
- 12V and 24V Industrial Power System
- USB Dedicated Charging Ports
- Battery Chargers
- Industrial Automation
- Entertainment
- 12 V and 24 V Automotive Power System
- Motor Control
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | ISAT(A) | fres(MHz) | Montageart | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | Material | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(mΩ) | Typ | IR(A) | Z @ 1 GHz(Ω) | H(mm) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 1.5 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität1.5 µH | – | Eigenresonanzfrequenz110 MHz | MontageartSMT | Performance Nennstrom16.4 A | Sättigungsstrom 14 A | Sättigungsstrom @ 30%11 A | Gleichstromwiderstand4.3 mΩ | MaterialSuperflux | – | – | – | – | Gleichstromwiderstand4.73 mΩ | – | – | – | Höhe4.8 mm | ||||
 | WE-PDF SMT-Speicherdrossel, 7.2 µH, 6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PDF SMT-Speicherdrossel | Induktivität7.2 µH | Sättigungsstrom6 A | Eigenresonanzfrequenz31 MHz | MontageartSMT | – | – | – | – | – | – | – | – | – | Gleichstromwiderstand12.8 mΩ | – | Nennstrom7.9 A | – | Höhe6.1 mm | ||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | MontageartSMT | – | – | – | – | – | Impedanz @ 100 MHz300 Ω | Maximale Impedanz350 Ω | Maximale Impedanz200 MHz | Nennstrom 23000 mA | Gleichstromwiderstand50 mΩ | TypHochstrom | Nennstrom2 A | Impedanz @ 1 GHz97 Ω | Höhe0.9 mm | ||||
 | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | MontageartSMT | – | – | – | – | – | Impedanz @ 100 MHz400 Ω | Maximale Impedanz460 Ω | Maximale Impedanz110 MHz | Nennstrom 24500 mA | Gleichstromwiderstand20 mΩ | TypHochstrom | Nennstrom4.5 A | Impedanz @ 1 GHz108 Ω | Höhe3.2 mm |