IC-Hersteller Texas Instruments

IC-Hersteller (103)

Texas Instruments LMQ61460

LMQ61460 3-V to 36-V, 6 A, Low EMI Synchronous Step-Down Converter

Details

TopologieAbwärtswandler
Eingangsspannung3-36 V
Schaltfrequenz200-2200 kHz
Ausgang 134.2 V / 6 A
IC-RevisionC

Beschreibung

The LMQ61460 is a high-performance, DC-DC synchronous buck converter with integrated bypass capacitors. With integrated high-side and low-side MOSFETs, up to 6 A of output current is delivered over a wide input range of 3.0 V to 36 V; tolerant of 42 V, easing input surge protection design. The device implements soft recovery from dropout eliminating overshoot on the output. The device is specifically designed for minimal EMI. The device incorporates pseudo-random spread spectrum, integrated bypass capacitors, adjustable SW node rise time, low-EMI VQFN-HR package featuring low switch node ringing, and optimized pinout for ease of use. The switching frequency can be synchronized between 200 kHz and 2.2 MHz to avoid noise sensitive frequency bands. In addition the frequency can be selected for improved efficiency at low operating frequency or smaller solution size at high operating frequency. Auto-mode enables frequency foldback when operating at light loads, allowing an unloaded current consumption of only 7 µA (typical) and high light load efficiency. Seamless transition between PWM and PFM modes, along with very low MOSFET ON resistances and an external bias input, ensures exceptional efficiency across the entire load range.

Eigenschaften

  • Functional Safety-Capable–Documentation available to aid functional safety system design
  • Optimized for ultra-low EMI requirements–Hotrod™ package minimizes switch node ringing–Internal bypass capacitors reduce EMI–Parallel input path minimizes parasitic inductance–Spread spectrum reduces peak emissions–Adjustable switch node rise time
  • Designed for rugged applications–Supports 42-V transient–0.4-V dropout with 4-A load (typical)
  • High efficiency power conversion at all loads–7-µA no load current at 13.5 VIN, 3.3 VOUT–90% PFM efficiency at 1-mA, 13.5 VIN, 5 VOUT–Low MOSFET ON resistance
  • RDS_ON_HS = 41 mΩ (typical)
  • RDS_ON_LS = 21 mΩ (typical)
  • External bias option for improved efficiency
  • Pin compatible with:–LM61460 (36 V, 6 A)

Typische Anwendungen

  • Industrial robot: CPU board, Industrial PC: single board computer, Test and measurement instrumentation
  • USB type-C, General purpose wide-VIN step down applications

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IRP,40K(A)
ISAT,30%(A)
RDC typ.(mΩ)
fres(MHz)
VOP(V)
Montageart
ISAT,10%(A)
RDC(mΩ)
Material
RDC max.(mΩ)
Muster
WE-MAPI SMT-Speicherdrossel, 1 µH, 10.1 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität1 µH
Performance Nennstrom10.1 A
Sättigungsstrom @ 30%11.5 A
Gleichstromwiderstand12 mΩ
Eigenresonanzfrequenz55 MHz
Betriebsspannung80 V
MontageartSMT 
Sättigungsstrom 15.3 A
Gleichstromwiderstand15 mΩ
WE-MAPI SMT-Speicherdrossel, 1.5 µH, 7.45 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität1.5 µH
Performance Nennstrom7.45 A
Sättigungsstrom @ 30%9 A
Gleichstromwiderstand18 mΩ
Eigenresonanzfrequenz40 MHz
Betriebsspannung80 V
MontageartSMT 
Sättigungsstrom 14.2 A
Gleichstromwiderstand20.7 mΩ
WE-HCI SMT-Hochstrominduktivität, 2.2 µH, 9.2 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität2.2 µH
Performance Nennstrom9.2 A
Sättigungsstrom @ 30%7.5 A
Eigenresonanzfrequenz108 MHz
MontageartSMT 
Sättigungsstrom 13.5 A
Gleichstromwiderstand11.3 mΩ
MaterialSuperflux 
Gleichstromwiderstand12.43 mΩ
WE-XHMI SMT Speicherdrossel, 4.7 µH, 9.6 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität4.7 µH
Performance Nennstrom9.6 A
Sättigungsstrom @ 30%13 A
Gleichstromwiderstand13 mΩ
Eigenresonanzfrequenz28 MHz
Betriebsspannung120 V
MontageartSMT 
Sättigungsstrom 16.5 A
Gleichstromwiderstand13 mΩ
Gleichstromwiderstand14.3 mΩ