| Topologie | Abwärtswandler |
| Eingangsspannung | 3-36 V |
| Schaltfrequenz | 200-2200 kHz |
| Ausgang 1 | 34.2 V / 6 A |
| IC-Revision | C |
The LMQ61460 is a high-performance, DC-DC synchronous buck converter with integrated bypass capacitors. With integrated high-side and low-side MOSFETs, up to 6 A of output current is delivered over a wide input range of 3.0 V to 36 V; tolerant of 42 V, easing input surge protection design. The device implements soft recovery from dropout eliminating overshoot on the output. The device is specifically designed for minimal EMI. The device incorporates pseudo-random spread spectrum, integrated bypass capacitors, adjustable SW node rise time, low-EMI VQFN-HR package featuring low switch node ringing, and optimized pinout for ease of use. The switching frequency can be synchronized between 200 kHz and 2.2 MHz to avoid noise sensitive frequency bands. In addition the frequency can be selected for improved efficiency at low operating frequency or smaller solution size at high operating frequency. Auto-mode enables frequency foldback when operating at light loads, allowing an unloaded current consumption of only 7 µA (typical) and high light load efficiency. Seamless transition between PWM and PFM modes, along with very low MOSFET ON resistances and an external bias input, ensures exceptional efficiency across the entire load range.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | fres(MHz) | VOP(V) | Montageart | ISAT,10%(A) | RDC(mΩ) | Material | RDC max.(mΩ) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-MAPI SMT-Speicherdrossel, 1 µH, 10.1 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität1 µH | Performance Nennstrom10.1 A | Sättigungsstrom @ 30%11.5 A | Gleichstromwiderstand12 mΩ | Eigenresonanzfrequenz55 MHz | Betriebsspannung80 V | MontageartSMT | Sättigungsstrom 15.3 A | – | – | Gleichstromwiderstand15 mΩ | ||||
![]() | WE-MAPI SMT-Speicherdrossel, 1.5 µH, 7.45 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität1.5 µH | Performance Nennstrom7.45 A | Sättigungsstrom @ 30%9 A | Gleichstromwiderstand18 mΩ | Eigenresonanzfrequenz40 MHz | Betriebsspannung80 V | MontageartSMT | Sättigungsstrom 14.2 A | – | – | Gleichstromwiderstand20.7 mΩ | ||||
![]() | WE-HCI SMT-Hochstrominduktivität, 2.2 µH, 9.2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität2.2 µH | Performance Nennstrom9.2 A | Sättigungsstrom @ 30%7.5 A | – | Eigenresonanzfrequenz108 MHz | – | MontageartSMT | Sättigungsstrom 13.5 A | Gleichstromwiderstand11.3 mΩ | MaterialSuperflux | Gleichstromwiderstand12.43 mΩ | ||||
![]() | WE-XHMI SMT Speicherdrossel, 4.7 µH, 9.6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-XHMI SMT Speicherdrossel | Induktivität4.7 µH | Performance Nennstrom9.6 A | Sättigungsstrom @ 30%13 A | Gleichstromwiderstand13 mΩ | Eigenresonanzfrequenz28 MHz | Betriebsspannung120 V | MontageartSMT | Sättigungsstrom 16.5 A | Gleichstromwiderstand13 mΩ | – | Gleichstromwiderstand14.3 mΩ |