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Texas Instruments LM5161 | Demoboard TIDM646
LM5161 Wide Input 100-V, 1-A Synchronous Buck/Fly-Buck™ Converter
Details
| Topologie | Abwärts- und Aufwärtswandler |
| Eingangsspannung | -36 - -62 V |
| Ausgang 1 | 56 V / 18 A |
| IC-Revision | 1 |
Beschreibung
This reference design uses UCD3138064A as a digital controller to control two-phase two-rail inverting buck-boost. This non-isolated converter is used for wireless radio power. The input voltage is from -35 V to -60 V. There are two outputs. The default output voltage of rail 1 is 32 V and max current is 8.5 A; the default output voltage of rail 2 is 48 V and max current is 5.5 A. The output voltage is adjustable from 30 V to 56 V. With some component changes and firmware changes, the hardware can be used for current mode control or transition mode control to increase power and improve load transient. Test results of three controls are provided respectively.
Eigenschaften
- Inverting buck boost for -48-V to 48-V system
- Transient response with less than +/- 3% overshoot/undershoot voltage
Typische Anwendungen
- IGBT Gate Drive Bias Supply
- E-Meter Power Line Communication
- Industrial Programmable Logic Controller
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(nH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | fres(MHz) | Drahttype | LR(nH) | IR(A) | RDC(mΩ) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCM SMT-Hochstrominduktivität, 400 nH, 54.3 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCM SMT-Hochstrominduktivität | Induktivität400 nH | Performance Nennstrom54.3 A | Sättigungsstrom 123.8 A | Sättigungsstrom @ 30%28.3 A | – | Eigenresonanzfrequenz25 MHz | – | Nenninduktivität345 nH | Nennstrom25 A | Gleichstromwiderstand0.37 mΩ | MaterialMnZn | ||||
 | WE-HCF SMT-Hochstrominduktivität, 22000 nH, 34.95 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCF SMT-Hochstrominduktivität | Induktivität22000 nH | Performance Nennstrom34.95 A | Sättigungsstrom 115.5 A | Sättigungsstrom @ 30%18 A | Gleichstromwiderstand2.64 mΩ | Eigenresonanzfrequenz9 MHz | DrahttypeFlach | Nenninduktivität5000 nH | Nennstrom35 A | Gleichstromwiderstand2.4 mΩ | MaterialMnZn |