IC-Hersteller Texas Instruments

IC-Hersteller (103)

Texas Instruments LM25184 | Demoboard LM25184EVM-S12

42-VIN PSR flyback converter with 65-V, 4.1-A integrated power MOSFET

Details

TopologieSperrwandler
Eingangsspannung6-42 V
Ausgang 112.3 V / 0.8 A
IC-RevisionA

Beschreibung

The LM25184 is a primary-side regulated (PSR) flyback converter with high efficiency over a wide input voltage range of 4.5 V to 42 V. The isolated output voltage is sampled from the primary-side flyback voltage. The high level of integration results in a simple, reliable, and high-density design with only one component crossing the isolation barrier. Boundary conduction mode (BCM) switching enables a compact magnetic solution and better than ±1.5% load and line regulation performance. An integrated 65-V power MOSFET provides output power up to 15 W with enhanced headroom for line transients.The LM25184 simplifies the implementation of isolated DC/DC supplies with optional features to optimize performance for the target end equipment. The output voltage is set by one resistor, while an optional resistor improves output voltage accuracy by negating the thermal coefficient of the flyback diode voltage drop. Additional features include an internally-fixed or externally-programmable soft-start, precision enable input with hysteresis for adjustable line UVLO, hiccup-mode overload protection, and thermal shutdown protection with automatic recovery.The LM25184 flyback converter is available in a 8-pin, 4-mm × 4-mm, thermally-enhanced WSON package with 0.8-mm pin pitch.

Eigenschaften

  • Functional Safety-Capable
  • Documentation available to aid functional safety system design
  • Designed for reliable and rugged applications
  • Wide input voltage range of 4.5 V to 42 V with operation down to 3.5 V after start-up
  • Robust solution with only one component crossing the isolation barrier
  • ±1.5% total output regulation accuracy
  • Optional VOUT temperature compensation
  • –40°C to +150°C junction temperature range
  • Integration reduces solution size and cost
  • Integrated 65-V, 0.11-Ω power MOSFET
  • No optocoupler or transformer auxiliary winding required for VOUT regulation
  • Internal loop compensation
  • High-efficiency PSR flyback operation
  • Quasi-resonant MOSFET turnoff in BCM
  • External bias option for improved efficiency
  • Single- and multi-output implementations
  • Ultra-low conducted and radiated EMI signatures
  • Soft switching avoids diode reverse recovery
  • Optimized for CISPR 32 EMI requirements
  • Create a custom flyback regulator design using WEBENCH Power Designer

Typische Anwendungen

  • Automotive powertrain systems / Traction inverter and motor drives: IGBT and SiC gate drive supplies / Isolated bias power railsIsolated field transmitters and field actuators
  • Sub-AM band automotive body electronics

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IRP,40K(A)
ISAT,30%(A)
RDC typ.(mΩ)
fres(MHz)
VOP(V)
Montageart
Vin
VOut1(V)
IOut1(A)
n
IR 1(mA)
ISAT(A)
RDC1 max.(Ω)
LS(nH)
VT(V (DC))
Bauform
Z @ 100 MHz(Ω)
Zmax(Ω)
Testbedingung Zmax
IR 2(mA)
RDC max.(mΩ)
Typ
Muster
WE-MAPI SMT-Speicherdrossel, 4.7 µH, 5.1 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität4.7 µH
Performance Nennstrom5.1 A
Sättigungsstrom @ 30%8.2 A
Gleichstromwiderstand39.9 mΩ
Eigenresonanzfrequenz24 MHz
Betriebsspannung80 V
MontageartSMT 
Sättigungsstrom6.4 A
Bauform4030 
Gleichstromwiderstand44 mΩ
WE-FLYTI MID-FLYTI Flyback Transformers for Texas Instruments, 7 µH, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität7 µH
MontageartSMT 
Input Voltage 15 - 42 V (DC)
Ausgangsspannung 112 V
Ausgangsstrom 11 A
Übersetzungsverhältnis1:1 
Sättigungsstrom6.4 A
Streuinduktivität250 nH
Prüfspannung1500 V (DC)
BauformEP7 
WE-CBF SMT-Ferrit, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
ProduktserieWE-CBF SMT-Ferrit
MontageartSMT 
Nennstrom [1]6000 mA
Gleichstromwiderstand [1]0.008 Ω
Bauform0805 
Impedanz @ 100 MHz22 Ω
Maximale Impedanz40 Ω
Maximale Impedanz1000 MHz 
Nennstrom 26000 mA
Gleichstromwiderstand8 mΩ
TypHochstrom