IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (337)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (97)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (58)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Texas Instruments LM25101 | Demoboard TIDA-00121
Solar Street Light with Integrated MPPT Charger Reference Design
Details
| Topologie | Sonstige Topologie |
| Eingangsspannung | 15-22 V |
| Ausgang 1 | 0.7 A |
Beschreibung
This design is a 12A Maximum Power Point Tracking (MPPT) solar charge controller with a 700mA LED driver. It is targeted for low power solar charger and LED driver solutions such as solar street lights. This design is capable of charging 12V batteries with up to 10A output current from 12V panels. However, it can be easily adapted to 24V systems by just changing the MOSFETs to 60V rated parts. Also, the design can drive up to 15 LEDs in series with 700mA of current. It is possible to adapt the design for LED currents up to 1.1A with minimum change in hardware. TI provides a complete solar inverting system for low power loads. Additionally this design takes real world considerations in to account, such as reverse battery protection, built-in battery charge profile for 12V Pb-acid batteries, and a highly efficient design. Together these provide new market entrants and faster time to market for their design.
Eigenschaften
Remark: BOM and Schematics are added with main pdf.
High efficiency: >95% for MPPT charger and >90% for LED driverSupports 15VDC - 22VDC Input Voltage RangeBuilt in charge profile for 12V Pb-acid batteryFlexible design adapts to 24V panels by only changing to 60V MOSFETsCapable of driving upto 15 LEDs with 700mA currentBoard Form Factor: 100 mm x 45 mm x 32 mm
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | IR,40K(A) | Bauform | Version | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(mΩ) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 6.8 µH, 22 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität6.8 µH | Performance Nennstrom22 A | Sättigungsstrom 113 A | Sättigungsstrom @ 30%27 A | Gleichstromwiderstand4.1 mΩ | Eigenresonanzfrequenz24 MHz | MaterialWE-PERM 2 | – | Bauform1890 | VersionSMT | – | – | – | – | Gleichstromwiderstand4.428 mΩ | – | ||||
 | WE-PD Speicherdrossel, 47 µH, 4.9 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD Speicherdrossel | Induktivität47 µH | Performance Nennstrom4.9 A | Sättigungsstrom 14.5 A | Sättigungsstrom @ 30%5.5 A | – | Eigenresonanzfrequenz6.5 MHz | – | Nennstrom3.8 A | Bauform1210 | VersionGestanzt | – | – | – | – | Gleichstromwiderstand60 mΩ | – | ||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | – | – | – | – | – | Bauform0805 | VersionSMT | Impedanz @ 100 MHz600 Ω | Maximale Impedanz660 Ω | Maximale Impedanz150 MHz | Nennstrom 21500 mA | Gleichstromwiderstand300 mΩ | TypBreitband |