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Texas Instruments AMC1311 | Demoboard TIDA-010039_HV_Card
2-V input, reinforced isolated amplifier with high CMTI for voltage sensing
Details
| Topologie | Sonstige Topologie |
| Eingangsspannung | 380-400 V |
| Ausgang 1 | 800 V / 12.5 A |
| IC-Revision | E3 |
Beschreibung
This reference design provides an overview on how to implement a three-level, three-phase, SiC-based AC/DC converter with bi-directional functionality. A high switching frequency of 50 kHz reduces the size of magnetics for the filter design and as a result a higher power density. SiC MOSFETs with switching loss enable higher DC bus voltages of up to 800V and lower switching losses with a peak efficiency of >97%. This design is configurable to work as a two-level or three-level rectifier.
Eigenschaften
- Rated nominal input of 380–400 VAC peak, withDC output of 800 V
- Maximum 10-kW, 10-kVA output power at 400-VAC50- or 60-Hz grid connection
- High-voltage (1200 V) SiC MOSFET-based fullbridge AC/DC converter for peak efficiency of
97%
- Compact filter by switching rectifier at 50 kHz
- Isolated driver ISO5852S with reinforced isolationfor driving high-voltage SiC MOSFET andUCC5320S for driving middle Si IGBT
- Isolated current sensing using the AMC1301 forload current monitoring
- TMS320F28379D control card for digital control
Typische Anwendungen
- DC Charging (Pile) Station, EV Charging Station Power Module, Energy Storage Power Conversion System (PCS), Three Phase UPS
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | λDom typ.(nm) | Farbe | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chiptechnologie | 2θ50% typ.(°) | C | Tol. C | VR(V (DC)) | Bauform | Betriebstemperatur | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | Fl(mm) | Verpackung | Vin | VOut1(V (DC)) | IOut1(A) | Isolierungstyp | fswitch(kHz) | ∫Udt(Vµs) | NPRI : NSEC | L(µH) | VT(V (RMS)) | Montageart | Pins | Arbeitsspannung(V (AC)) | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(Ω) | Typ | IR(mA) | Z @ 1 GHz(Ω) | H(mm) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WL-SMCD SMT Mono-color Chip LED Diffused, 573 nm, Hellgrün | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWL-SMCD SMT Mono-color Chip LED Diffused | dominante Wellenlänge [typ.]573 nm | FarbeHellgrün | Spitzen-Wellenlänge [typ.]575 nm | Lichtstärke [typ.]60 mcd | Durchlassspannung [typ.]2 V | ChiptechnologieAlInGaP | Abstrahlwinkel Phi 0° [typ.]140 ° | – | – | – | Bauform0603 | Betriebstemperatur -40 °C up to +85 °C | – | – | – | Länge1.6 mm | Breite0.8 mm | – | VerpackungTape and Reel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Höhe0.4 mm | ||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | – | – | – | – | – | – | – | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | – | – | – | Länge1.6 mm | Breite0.8 mm | Pad Dimension0.3 mm | – | – | – | – | – | – | – | – | – | – | MontageartSMT | – | – | Impedanz @ 100 MHz1000 Ω | Maximale Impedanz1050 Ω | Maximale Impedanz120 MHz | Nennstrom 2830 mA | Gleichstromwiderstand0.3 Ω | TypBreitband | Nennstrom600 mA | Impedanz @ 1 GHz186 Ω | Höhe0.8 mm | ||||
 | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | – | – | – | – | – | – | – | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | – | – | – | Länge1.6 mm | Breite0.8 mm | Pad Dimension0.3 mm | – | – | – | – | – | – | – | – | – | – | MontageartSMT | – | – | Impedanz @ 100 MHz26 Ω | Maximale Impedanz39 Ω | Maximale Impedanz515 MHz | Nennstrom 26500 mA | Gleichstromwiderstand0.008 Ω | TypHochstrom | Nennstrom6500 mA | Impedanz @ 1 GHz33 Ω | Höhe0.8 mm | ||||
| WCAP-CSGP MLCCs 16 V(DC), –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 16 V(DC) | – | – | – | – | – | – | – | Kapazität10 nF | Kapazität±10% | Nennspannung16 V (DC) | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor3.5 % | Isolationswiderstand10 GΩ | KeramiktypX7R Klasse II | Länge1.6 mm | Breite0.8 mm | Pad Dimension0.4 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Höhe0.8 mm | |||||
| WCAP-CSGP MLCCs 50 V(DC), –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 50 V(DC) | – | – | – | – | – | – | – | Kapazität100 nF | Kapazität±10% | Nennspannung50 V (DC) | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor3 % | Isolationswiderstand5 GΩ | KeramiktypX7R Klasse II | Länge1.6 mm | Breite0.8 mm | Pad Dimension0.4 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Höhe0.8 mm | |||||
 | Simulation– | Downloads7 Dateien | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten - Einreihig | – | – | – | – | – | – | – | – | – | – | – | Betriebstemperatur -40 °C up to +105 °C | – | Isolationswiderstand1000 MΩ | – | Länge10.16 mm | – | – | VerpackungBeutel | – | – | – | – | – | – | – | – | – | MontageartTHT | Pins4 | Arbeitsspannung250 V (AC) | – | – | – | – | – | TypAbgewinkelt | Nennstrom3000 mA | – | – | |||
 | WE-PPTI Push-Pull Transformers, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PPTI Push-Pull Transformers | – | – | – | – | – | – | – | – | – | – | Bauform1209 | Betriebstemperatur -40 °C up to +125 °C | – | – | – | Länge9.14 mm | Breite12.7 mm | – | VerpackungTape and Reel | Input Voltage 5 V (DC) | Ausgangsspannung 15 V (DC) | Ausgangsstrom 10.65 A | IsolierungstypVerstärkt | Switching Frequency 300 - 620 | Spannung-µSekunde10 Vµs | Übersetzungsverhältnis1:1.3 | Induktivität340 µH | Prüfspannung5000 V (RMS) | MontageartSMT | – | – | – | – | – | – | – | – | – | – | Höhe7.62 mm |