IC-Hersteller Texas Instruments

IC-Hersteller (103)

Texas Instruments ADC12DJ3200AAVR | Demoboard ADC12DJ5200RFEVM

ADC12DJ5200RF RF-sampling 12-bit dual 5.2-GSPS or single 10.4-GSPS ADC evaluation module

Details

TopologieADC
IC-RevisionD

Beschreibung

The ADC12DJ5200RF evaluation module (EVM) allows for the evaluation of device ADC12DJ5200RF. The ADC12DJ5200RF is a low-power, 12-bit, dual 5.2-GSPS/single 10.4-GSPS, RF-sampling analog-to-digital converter (ADC) with a buffered analog input, integrated digital down converter with programmable NCO and decimation settings (including undecimated 12- and 8-bit ADC output), which features a JESD204B/C interface. The EVM has transformer-coupled analog inputs to accommodate a wide range of signal sources and frequencies. An LMX2582 clock synthesizer and LMK04828 JESD204B/C clock generator are included on the EVM and can be configured to provide an ultra-low-jitter ADC device clock and SYSREF for a complete JESD204B/C subclass 1 clocking solution. The ADC12DJ5200RF, LMX2582, and LMK04828 are controlled through an easy-to-use software GUI enabling quick configuration for a variety of uses. The ADC12DJ5200RFEVM connects directly to the TSW14J57EVM data capture hardware via the high-speed FMC+ connector. High-speed data converter pro software (DATACONVERTERPRO-SW) is also available for data capture and analysis support when using the TSW14J57EVM.

Eigenschaften

  • Flexible transformer-coupled analog input to allow for a variety of sources and frequencies
  • Easy-to-use software GUI to configure ADC12DJ5200RF, LMX2582, and LMK04828 devices for a variety of configurations through a USB interface
  • Quickly evaluate ADC performance through high-speed data converter pro software (DATACONVERTERPRO-SW)
  • Simple connection to TSW14J57EVM data capture card (sold separately)

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
ISAT,10%(A)
ISAT,30%(A)
IR,40K(A)
IRP,40K(A)
fres(MHz)
Bauform
Version
Pins
Montageart
L(mm)
H(mm)
IR(A)
Arbeitsspannung(V (AC))
Betriebstemperatur
Z @ 100 MHz(Ω)
Zmax(Ω)
Testbedingung Zmax
IR 2(mA)
RDC max.(mΩ)
Typ
Muster
WE-PD Speicherdrossel, 10 µH, 10.5 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität10 µH
Sättigungsstrom 110.5 A
Sättigungsstrom @ 30%13 A
Nennstrom7.1 A
Performance Nennstrom9.5 A
Eigenresonanzfrequenz21 MHz
Bauform1210 
VersionGestanzt 
Pins
MontageartSMT 
Länge12 mm
Höhe10 mm
Nennstrom7.1 A
Betriebstemperatur -40 °C up to +125 °C
Gleichstromwiderstand21 mΩ
WE-CBF SMT-Ferrit, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
ProduktserieWE-CBF SMT-Ferrit
Bauform0402 
VersionSMT 
MontageartSMT 
Länge1 mm
Höhe0.5 mm
Nennstrom0.5 A
Betriebstemperatur -55 °C up to +125 °C
Impedanz @ 100 MHz120 Ω
Maximale Impedanz200 Ω
Maximale Impedanz600 MHz 
Nennstrom 21100 mA
Gleichstromwiderstand200 mΩ
TypBreitband 
WR-PHD Stiftleisten - Einreihig, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Pins
MontageartTHT 
Länge7.62 mm
Nennstrom3 A
Arbeitsspannung250 V (AC)
Betriebstemperatur -40 °C up to +105 °C
TypGerade