IC-Hersteller STMicroelectronics

IC-Hersteller (103)

STMicroelectronics STripFET™ F7 | Demoboard STEVAL-CTM006V1

5 kW low voltage high current inverter for industrial motor control applications

Details

TopologieInverswandler
Eingangsspannung48-75 V
IC-Revision1

Beschreibung

The STEVAL-CTM009V1 evaluation kit for motor control is designed to demonstrate the capabilities of ST Power MOSFETs based on STripFET™ F7 technology. The 100V STripFET™ F7 devices (STH31*N10F7) are ideal for low voltage (up to 48 V), high current applications such as forklifts, golf carts and power tool. The STEVAL-CTM004V1 power board features an insulated metal substrate (IMS), NTCs for thermal protection and decoupling gate resistors for each power MOSFET. The board mounts ST devices in the H²PAK-6 package. The driver stage is an STEVAL-CTM006V1 board with L6491 high current capability gate drivers to drive the power MOSFETs and integrated comparator for protections. The driver board includes the ST motor control connector, so you can interface the STEVAL-CTM009V1 with any ST MCU control board suitable for motor control (not included in the kit). The system also has an STEVAL-CTM005V1 bus link capacitor board and an STEVAL-CTM008V1 current sensing board.

Eigenschaften

  • Power board with insulated metal substrate (IMS) hosting 36 STH310N10F7 or STH315N10F7 power
  • MOSFETS in the H²PAK-6 (6x switch) package, designed also for automotive applications.
  • High and low-side, high current capability (L6491) gate driver with integrated comparator for fast protection and smart shutdown functions.
  • Maximum power 5 kW at 48 V.
  • Isolated current sensing, bus voltage and temperature monitoring.

Typische Anwendungen

  • forklifts/ E-rickshaw/ golf carts

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IR(A)
ISAT(A)
RDC(mΩ)
fres(MHz)
Bauform
Version
Montageart
Z @ 100 MHz(Ω)
Zmax(Ω)
Testbedingung Zmax
IR 2(mA)
RDC max.(Ω)
Typ
Muster
WE-LQS SMT-Speicherdrossel, 15 µH, 1.45 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität15 µH
Nennstrom1.45 A
Sättigungsstrom1.9 A
Gleichstromwiderstand125 mΩ
Eigenresonanzfrequenz24 MHz
Bauform6028 
MontageartSMT 
WE-PD4 SMT-Speicherdrossel, 47 µH, 1.8 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität47 µH
Nennstrom1.8 A
Sättigungsstrom2.14 A
Eigenresonanzfrequenz10 MHz
Bauform
MontageartSMT 
Gleichstromwiderstand0.19 Ω
WE-PD SMT-Speicherdrossel, 68 µH, 1.9 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität68 µH
Nennstrom1.9 A
Sättigungsstrom2.2 A
Eigenresonanzfrequenz8 MHz
Bauform1050 
VersionPerformance 
MontageartSMT 
Gleichstromwiderstand0.132 Ω
WE-CBF SMT-Ferrit, –, 1.5 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
ProduktserieWE-CBF SMT-Ferrit
Nennstrom1.5 A
Bauform0603 
VersionSMT 
MontageartSMT 
Impedanz @ 100 MHz120 Ω
Maximale Impedanz180 Ω
Maximale Impedanz400 MHz 
Nennstrom 22000 mA
Gleichstromwiderstand0.05 Ω
TypHochstrom