IC-Hersteller STMicroelectronics

IC-Hersteller (103)

STMicroelectronics L9907 | Demoboard STEVAL-TTM001V1

5 kW low voltage high current inverter for automotive motor control applications

Details

TopologieSonstige Topologie
Schaltfrequenz20 kHz
IC-Revision1

Beschreibung

L9907 is a smart power device realized in STMicroelectronics advanced BCD-6s technology. It is able to drive all PowerMOS transistors for 3-phase BLDC motor applications. The circuit is suitable to operate in environments with high supply voltage such as double battery. Supply related pins are capable of withstanding up to 90 V. Moreover, the device is able to control the six pre-driver channels independently. In this way it is possible to implement all kinds of electric motor control strategy.The integrated boost regulator provides sufficient gate charge for all PowerMOS down to a battery voltage of 6 V. All pre-drivers have dedicated connections with the MOSFET sources. The device offers programmability for a base gate output current via an external resistor. Moreover, via SPI, it is possible to select among 4 gate output current levels even while the application is running. All channels are protected against short circuit and the device is protected against overtemperature conditions. Moreover, the boost converter implements an over voltage protection to allow safe functionality of pre-drivers in all battery voltage conditions. During over voltage conditions, BST_C voltage is limited by temporarily switching off the boost regulator and pre-drivers are allowed to operate. Boost will be self re-enabled as soon as the output voltage decreases to an acceptable value.The device is equipped with 2 current sense amplifiers. Both have SPI selectable amplifier gain (10, 30, 50 and 100) and output offset voltage level in order to allow max flexibility for phase or ground current sense strategy. All I/O pins are 35 V compatible. Full diagnostic is available through SPI. The device is available in TQFP64. The device is protected against Shoot Through events.

Eigenschaften

  • Low voltage, high current inverter kit with the following boards (not available separately)
  • Insulated metal substrate (IMS) for efficient cooling
  • Hosts 36 STH315N10F7 power MOSFETs in the H²PAK-6 (6 switch) package
  • Decoupling gate resistors (2.2 Ω)
  • 3-shunt resistors ground referred for current sensing (optional)
  • 3 NTCs for thermal protection
  • Based on L9907 three phase gate driver AEC-Q100 qualified
  • 34-pin Motor Control connector
  • Full diagnostic via SPI
  • Current sense amplifiers
  • overvoltage, undervoltage and overcurrent with VDS drop monitoring, overtemperature and shutdown
  • Programmable gate current capability
  • Bulk capacitor board
  • Current sensing board

Typische Anwendungen

  • 3-phase BLDC motor applications

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IR(A)
ISAT(A)
RDC(mΩ)
fres(MHz)
Bauform
Version
Montageart
Z @ 100 MHz(Ω)
Zmax(Ω)
Testbedingung Zmax
IR 2(mA)
RDC max.(Ω)
Typ
Muster
WE-LQS SMT-Speicherdrossel, 3.3 µH, 2 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität3.3 µH
Nennstrom2 A
Sättigungsstrom2.9 A
Gleichstromwiderstand55 mΩ
Eigenresonanzfrequenz56 MHz
Bauform4018 
MontageartSMT 
WE-LQS SMT-Speicherdrossel, 15 µH, 1.45 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität15 µH
Nennstrom1.45 A
Sättigungsstrom1.9 A
Gleichstromwiderstand125 mΩ
Eigenresonanzfrequenz24 MHz
Bauform6028 
MontageartSMT 
WE-PD4 SMT-Speicherdrossel, 47 µH, 1.8 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität47 µH
Nennstrom1.8 A
Sättigungsstrom2.14 A
Eigenresonanzfrequenz10 MHz
Bauform
MontageartSMT 
Gleichstromwiderstand0.19 Ω
WE-PD SMT-Speicherdrossel, 68 µH, 1.9 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität68 µH
Nennstrom1.9 A
Sättigungsstrom2.2 A
Eigenresonanzfrequenz8 MHz
Bauform1050 
VersionPerformance 
MontageartSMT 
Gleichstromwiderstand0.132 Ω
WE-CBF SMT-Ferrit, –, 1.5 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
ProduktserieWE-CBF SMT-Ferrit
Nennstrom1.5 A
Bauform0603 
VersionSMT 
MontageartSMT 
Impedanz @ 100 MHz120 Ω
Maximale Impedanz180 Ω
Maximale Impedanz400 MHz 
Nennstrom 22000 mA
Gleichstromwiderstand0.05 Ω
TypHochstrom 
WE-CBF SMT-Ferrit, –, 2 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
ProduktserieWE-CBF SMT-Ferrit
Nennstrom2 A
Bauform0805 
VersionSMT 
MontageartSMT 
Impedanz @ 100 MHz30 Ω
Maximale Impedanz55 Ω
Maximale Impedanz1000 MHz 
Nennstrom 23000 mA
Gleichstromwiderstand0.025 Ω
TypHochstrom