| Topologie | Sonstige Topologie |
| Schaltfrequenz | 20 kHz |
| IC-Revision | 1 |
L9907 is a smart power device realized in STMicroelectronics advanced BCD-6s technology. It is able to drive all PowerMOS transistors for 3-phase BLDC motor applications. The circuit is suitable to operate in environments with high supply voltage such as double battery. Supply related pins are capable of withstanding up to 90 V. Moreover, the device is able to control the six pre-driver channels independently. In this way it is possible to implement all kinds of electric motor control strategy.The integrated boost regulator provides sufficient gate charge for all PowerMOS down to a battery voltage of 6 V. All pre-drivers have dedicated connections with the MOSFET sources. The device offers programmability for a base gate output current via an external resistor. Moreover, via SPI, it is possible to select among 4 gate output current levels even while the application is running. All channels are protected against short circuit and the device is protected against overtemperature conditions. Moreover, the boost converter implements an over voltage protection to allow safe functionality of pre-drivers in all battery voltage conditions. During over voltage conditions, BST_C voltage is limited by temporarily switching off the boost regulator and pre-drivers are allowed to operate. Boost will be self re-enabled as soon as the output voltage decreases to an acceptable value.The device is equipped with 2 current sense amplifiers. Both have SPI selectable amplifier gain (10, 30, 50 and 100) and output offset voltage level in order to allow max flexibility for phase or ground current sense strategy. All I/O pins are 35 V compatible. Full diagnostic is available through SPI. The device is available in TQFP64. The device is protected against Shoot Through events.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR(A) | ISAT(A) | RDC(mΩ) | fres(MHz) | Bauform | Version | Montageart | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(Ω) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-LQS SMT-Speicherdrossel, 3.3 µH, 2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LQS SMT-Speicherdrossel | Induktivität3.3 µH | Nennstrom2 A | Sättigungsstrom2.9 A | Gleichstromwiderstand55 mΩ | Eigenresonanzfrequenz56 MHz | Bauform4018 | – | MontageartSMT | – | – | – | – | – | – | ||||
![]() | WE-LQS SMT-Speicherdrossel, 15 µH, 1.45 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LQS SMT-Speicherdrossel | Induktivität15 µH | Nennstrom1.45 A | Sättigungsstrom1.9 A | Gleichstromwiderstand125 mΩ | Eigenresonanzfrequenz24 MHz | Bauform6028 | – | MontageartSMT | – | – | – | – | – | – | ||||
![]() | WE-PD4 SMT-Speicherdrossel, 47 µH, 1.8 A | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD4 SMT-Speicherdrossel | Induktivität47 µH | Nennstrom1.8 A | Sättigungsstrom2.14 A | – | Eigenresonanzfrequenz10 MHz | BauformL | – | MontageartSMT | – | – | – | – | Gleichstromwiderstand0.19 Ω | – | |||
![]() | WE-PD SMT-Speicherdrossel, 68 µH, 1.9 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität68 µH | Nennstrom1.9 A | Sättigungsstrom2.2 A | – | Eigenresonanzfrequenz8 MHz | Bauform1050 | VersionPerformance | MontageartSMT | – | – | – | – | Gleichstromwiderstand0.132 Ω | – | ||||
![]() | WE-CBF SMT-Ferrit, –, 1.5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | Nennstrom1.5 A | – | – | – | Bauform0603 | VersionSMT | MontageartSMT | Impedanz @ 100 MHz120 Ω | Maximale Impedanz180 Ω | Maximale Impedanz400 MHz | Nennstrom 22000 mA | Gleichstromwiderstand0.05 Ω | TypHochstrom | ||||
![]() | WE-CBF SMT-Ferrit, –, 2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | Nennstrom2 A | – | – | – | Bauform0805 | VersionSMT | MontageartSMT | Impedanz @ 100 MHz30 Ω | Maximale Impedanz55 Ω | Maximale Impedanz1000 MHz | Nennstrom 23000 mA | Gleichstromwiderstand0.025 Ω | TypHochstrom |