IC-Hersteller ROHM
IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (136)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (266)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (333)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (96)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (54)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
ROHM SCT2H12NZ | Demoboard BD7682FJ-LB
BD768xFJ-LB series Quasi-Resonant converter Technical Design 24V / 1A ( SIC TO-3PFM SCT2H12NZ)
Details
| Topologie | Sperrwandler |
| Eingangsspannung | 400-690 V |
| Ausgang 1 | 24 V / 1 A |
| IC-Revision | Rev. A |
Beschreibung
The BD768xFJ-LB series are Quasi-Resonant switchingAC/DC converter for driving SiC (Silicon Carbide)–MOSFET.Using external switching MOSFET and current detection resistors provides a lot of flexibility in the design.Power efficiency is improved by the burst function and the reduction of switching frequency under light load conditions. This is the product that guarantees long time support in the Industrial market.
Eigenschaften
Quasi-resonant method （Maximum frequency control 120kHz）/Current modeLow power when load is light ( Burst operation) / Frequency reduction functionVCC pin : under voltage protection / overvoltage protectionLeading-Edge-Blanking functionOver-current protection (cycle-by-cycle)ZT trigger mask functionZT Over voltage protectionAC voltage correction functionSoft startBrown IN/OUT functionGate Clamp circuitMASK Function
Typische Anwendungen
- Industrial equipment, AC Adaptor, Household appliances
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT(A) | RDC max.(Ω) | Material | Q(%) | fres(MHz) | Montageart | IR(A) | ISAT,10%(A) | Version | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-TI Tonneninduktivität, 2.2 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TI Tonneninduktivität | Induktivität2.2 µH | – | Sättigungsstrom4.3 A | Gleichstromwiderstand0.02 Ω | – | – | Eigenresonanzfrequenz65 MHz | MontageartTHT | Nennstrom6.3 A | Sättigungsstrom 15.7 A | VersionSchrumpfschlauch | ||||
 | WE-GF SMT-Induktivität, 680 µH, 0.15 A | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-GF SMT-Induktivität | Induktivität680 µH | Performance Nennstrom0.15 A | – | Gleichstromwiderstand30 Ω | – | Güte30 % | Eigenresonanzfrequenz3 MHz | MontageartSMT | Nennstrom0.05 A | – | – | |||
 | WE-TI HV Tonneninduktivität (High Voltage), 1000 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TI HV Tonneninduktivität (High Voltage) | Induktivität1000 µH | – | Sättigungsstrom0.55 A | Gleichstromwiderstand2.08 Ω | MaterialNiZn | – | Eigenresonanzfrequenz1.8 MHz | MontageartTHT | Nennstrom0.5 A | Sättigungsstrom 10.55 A | VersionGestanzt |