IC-Hersteller ROHM

IC-Hersteller (96)

ROHM BM3G007MUV | Demoboard BM3G007MUV-EVK-002

650V GaN HEMT Power Stage

Details

TopologieLeistungsfaktor-Korrektur
Eingangsspannung90-264 V
Schaltfrequenz2000 kHz
Ausgang 1415 V / 0.6 A
IC-Revision001

Beschreibung

This is the product guarantees long time support in industrial market. BM3G007MUV-LB provides an optimum solution for all electronics systems that requires high power density and efficiency. By integrating the 650V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions. Owing to this, a high switching slew rate up to 150V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost, PCB size. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.

Eigenschaften

  • Nano Cap™ Integrated Output Selectable 5V LDO
  • Long Time Support Product for Industrial Applications
  • Wide Operating Range for VDD Pin Voltage
  • Wide Operating Range for IN Pin Voltage
  • Low VDD Quiescent and Operating Current
  • Low Propagation Delay
  • High dv/dt Immunity
  • Adjustable Gate Drive Strength
  • Power Good Signal Output
  • VDD UVLO Protection
  • Thermal Shutdown Protection

Typische Anwendungen

  • Industrial Equipment
  • Power Supplies with High Power Density, High Efficiency Demand, or Bridge Topology such as Totem-pole PFC, LLC Power Supply, Adaptor, etc.

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads ProduktseriePinsAnwendungPCB/Kabel/PanelModularityTypWire SectionCSicherheitsklassedV/dt
(V/µs)
DF @ 1 kHz
(%)
RISOBetriebstemperaturRaster
(mm)
VerpackungTol. CBauformBetriebstemperaturDF
(%)
KeramiktypFl
(mm)
Endurance
(h)
IRIPPLE
(mA)
ILeak
(µA)
Ø D
(mm)
IR
(A)
L
(mH)
RDC max.
(mΩ)
VR
(V (AC))
VT
(V (AC))
MaterialL
(mm)
W
(mm)
H
(mm)
Montageart Muster
691137910003SPEC
6 Dateien WR-TBL Series 1379 - 7.50 mm Horizontal Cable Entry w. Pressure Clamp 3 Pressure Clamp PCB Nein Horizontal 30 to 12 (AWG) 0.05 to 3.31 (mm²) -30 °C bis zu +120 °C 7.5 Karton -30 °C up to +120 °C 24 22.5 THT
7448040435SPEC
9 Dateien WE-CMBNC Stromkompensierte Netzdrossel Nanokristallin 4 L -55 °C up to +125 °C 3.5 35 80 300 2100 Nanokristallin 27.5 18 32 THT
890334023023CSSPEC
8 Dateien WCAP-FTXX Folienkondensatoren Across the mains100 nF X2 300 0.130 GΩ -40 °C bis zu +105 °C 10 Karton ±10% Pitch 10 mm -40 °C up to +105 °C 310 13 7 13 Boxed THT
890334025039CSSPEC
8 Dateien WCAP-FTXX Folienkondensatoren Across the mains470 nF X2 220 0.121.28 GΩ -40 °C bis zu +105 °C 15 Karton ±10% Pitch 15 mm -40 °C up to +105 °C 310 18 8 14 Boxed THT
7447013SPEC
6 Dateien WE-FI Funkentstördrossel -40 °C up to +105 °C 4.6 0.09 18.5 10.5
860020672012SPEC
7 Dateien WCAP-ATG5 Aluminium-Elektrolytkondensatoren33 µF -40 °C bis zu +105 °C 2 Ammopack ±20% 10 2000 75 16.5 5 50 11
861021486029SPEC
7 Dateien WCAP-AIG5 Aluminium-Elektrolytkondensatoren220 µF -25 °C bis zu +105 °C 10 Tray ±20% 35.0 x 37.0 -25 °C up to +105 °C 20 2000 1240 1980 35 450 37
885012206089SPEC
8 Dateien WCAP-CSGP MLCCs 50 V(DC)10 nF10 GΩ 7" Tape & Reel ±10% 0603 -55 °C up to +125 °C 2.5 X7R Klasse II 0.4 50 1.6 0.8 0.8
750345199SPEC
Power Inductor
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads ProduktseriePinsAnwendungPCB/Kabel/PanelModularityTypWire SectionCSicherheitsklassedV/dt
(V/µs)
DF @ 1 kHz
(%)
RISOBetriebstemperaturRaster
(mm)
VerpackungTol. CBauformBetriebstemperaturDF
(%)
KeramiktypFl
(mm)
Endurance
(h)
IRIPPLE
(mA)
ILeak
(µA)
Ø D
(mm)
IR
(A)
L
(mH)
RDC max.
(mΩ)
VR
(V (AC))
VT
(V (AC))
MaterialL
(mm)
W
(mm)
H
(mm)
Montageart Muster