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ROHM BD7682FJ-LB | Demoboard BD7682FJ-EVK-402
Low Noise Quasi-Resonant Control DC/DC converter IC for AC/DC Converter
Details
| Topologie | LLC Resonanzwandler |
| Eingangsspannung | 300-900 V |
| Schaltfrequenz | 106-134 kHz |
| Ausgang 1 | 25.2 V / 1 A |
| IC-Revision | 001 |
Beschreibung
The BD7682FJ-EVK-401, BD7682FJ-EVK-001 evaluation board outputs 24 V voltage from the input of 300 Vdc to 900 Vdc. The output current supplies up to 1 A. The BD768xFJ-LB series are Quasi-Resonant switching AC/DC converter for driving SiC (Silicon Carbide)–MOSFET. Using external switching MOSFET and current detection resistors provides a lot of flexibility in the design. Power efficiency is improved by the burst function and the reduction of switching frequency under light load conditions. This is the product that guarantees long time support in the Industrial market.
Eigenschaften
- Quasi-resonant method(Maximum frequency control 120kHz)/Current mode
- Low power when load is light ( Burst operation)/ Frequency reduction function
- VCC pin : under voltage protection/ over voltage protection
- Leading-Edge-Blanking function
- Over-current protection (cycle-by-cycle)
- ZT Trigger mask function
- AC voltage protection
- Soft start
- Brown IN/OUT function
- Gate Clamp circuit
- MASK Function
Typische Anwendungen
- Home appliances
- Industrial equipment
- AC Adaptor
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT(A) | RDC max.(Ω) | Material | Q(%) | fres(MHz) | Montageart | IR(A) | ISAT,10%(A) | Version | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-TI Tonneninduktivität, 2.2 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TI Tonneninduktivität | Induktivität2.2 µH | – | Sättigungsstrom4.3 A | Gleichstromwiderstand0.02 Ω | – | – | Eigenresonanzfrequenz65 MHz | MontageartTHT | Nennstrom6.3 A | Sättigungsstrom 15.7 A | VersionSchrumpfschlauch | ||||
 | WE-GF SMT-Induktivität, 680 µH, 0.15 A | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-GF SMT-Induktivität | Induktivität680 µH | Performance Nennstrom0.15 A | – | Gleichstromwiderstand30 Ω | – | Güte30 % | Eigenresonanzfrequenz3 MHz | MontageartSMT | Nennstrom0.05 A | – | – | |||
 | WE-TI HV Tonneninduktivität (High Voltage), 1000 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TI HV Tonneninduktivität (High Voltage) | Induktivität1000 µH | – | Sättigungsstrom0.55 A | Gleichstromwiderstand2.08 Ω | MaterialNiZn | – | Eigenresonanzfrequenz1.8 MHz | MontageartTHT | Nennstrom0.5 A | Sättigungsstrom 10.55 A | VersionGestanzt |