Onsemi NCP1063 | Demoboard UM90024

Beschreibung

For this evaluation board, the PFC circuit has been implemented on a 4-layer PCB, with 2 oz copper for the outer layers and 1.5 oz copper for the inner layers. GAN039-650NTB devices by Nexperia are used for both the fast and slow switching legs. The inductor is made of a High Flux core with the inductance of 480 μH and a DC resistance of 0.025 Ω, designed to operate at 65 kHz. A simple 4 A rated high/low side driver IC (Si8273) with 0 V and 12 V as the on/off voltage levels directly drives each GaN FET. The control function is handled by a TI UCC28180 PFC controller.

Eigenschaften

Simplified driver design as standard level MOSFET gate drivers can be used:0 V to 12 V drive voltage

Gate threshold voltage VGSth of 4 V

Robust gate oxide with ±20 V VGS rating

High gate threshold voltage of 4 V for gate bounce immunity

Low body diode Vf for reduced losses and simplified dead-time adjustments

Transient over-voltage capability for increased robustness

CCPAK package technology:Improved reliability, with reduced Rth(j-mb) for optimal cooling

Lower inductances for lower switching losses and EMI

150 °C maximum junction temperature

High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

Visual (AOI) soldering inspection, no need for expensive x-ray equipment

Easy solder wetting for good mechanical solder joints

Typische Anwendungen

Weiterführende Informationen

• Produktseite des IC-Herstellers