| Topology | Flyback Converter |
| Input voltage | 12 V |
| Output 1 | 12 V |
| IC revision | 1 |
For this evaluation board, the PFC circuit has been implemented on a 4-layer PCB, with 2 oz copper for the outer layers and 1.5 oz copper for the inner layers. GAN039-650NTB devices by Nexperia are used for both the fast and slow switching legs. The inductor is made of a High Flux core with the inductance of 480 μH and a DC resistance of 0.025 Ω, designed to operate at 65 kHz. A simple 4 A rated high/low side driver IC (Si8273) with 0 V and 12 V as the on/off voltage levels directly drives each GaN FET. The control function is handled by a TI UCC28180 PFC controller.
Simplified driver design as standard level MOSFET gate drivers can be used:0 V to 12 V drive voltage
Gate threshold voltage VGSth of 4 V
Robust gate oxide with ±20 V VGS rating
High gate threshold voltage of 4 V for gate bounce immunity
Low body diode Vf for reduced losses and simplified dead-time adjustments
Transient over-voltage capability for increased robustness
CCPAK package technology:Improved reliability, with reduced Rth(j-mb) for optimal cooling
Lower inductances for lower switching losses and EMI
150 °C maximum junction temperature
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joints
Order Code | Datasheet | Simulation | Downloads | Status | Product series | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | fres(MHz) | VOP(V) | Mount | VIN | VOut1(V) | IOut1(mA) | VOut2(V) | IOut2(mA) | Vaux(V) | ISAT(A) | VT(V (AC)) | fswitch(kHz) | NPRI : NSEC : NAUX | L(mm) | W(mm) | H(mm) | Size | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-MAPI SMT Power Inductor, 4.7 µH, 1.4 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MAPI SMT Power Inductor | Inductance4.7 µH | Performance Rated Current1.4 A | Saturation Current @ 30%2.3 A | DC Resistance338 mΩ | Self Resonant Frequency35 MHz | Operating Voltage80 V | MountSMT | – | – | – | – | – | – | Saturation Current1.75 A | – | – | – | Length2.5 mm | Width2 mm | Height1 mm | Size2510 | ||||
![]() | WE-OLSTM Offline Flyback Transformers, 900 µH, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-OLSTM Offline Flyback Transformers | Inductance900 µH | – | – | – | – | – | MountTHT | Input Voltage 85 - 265 V (AC) | Output Voltage 115 V | Output Current 1700 mA | Output Voltage 26 V | Output Current 2100 mA | Auxiliary Voltage12 V | Saturation Current0.82 A | Insulation Test Voltage1500 V (AC) | Switching Frequency 115 | Turns Ratio11.9:1.33:1:2.11 | Length18.5 mm | Width16.5 mm | Height18.8 mm | SizeEE16/7/5 |