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reference designNCP1063 | Demoboard UM90024

Onsemi NCP1063 | Demoboard UM90024

4 kW analogue bridgeless totem-pole PFC evaluation board

Overview

TopologyFlyback Converter
Input voltage12 V
Output 112 V
IC revision1

Description

For this evaluation board, the PFC circuit has been implemented on a 4-layer PCB, with 2 oz copper for the outer layers and 1.5 oz copper for the inner layers. GAN039-650NTB devices by Nexperia are used for both the fast and slow switching legs. The inductor is made of a High Flux core with the inductance of 480 μH and a DC resistance of 0.025 Ω, designed to operate at 65 kHz. A simple 4 A rated high/low side driver IC (Si8273) with 0 V and 12 V as the on/off voltage levels directly drives each GaN FET. The control function is handled by a TI UCC28180 PFC controller.

Features

Simplified driver design as standard level MOSFET gate drivers can be used:0 V to 12 V drive voltage

Gate threshold voltage VGSth of 4 V

Robust gate oxide with ±20 V VGS rating

High gate threshold voltage of 4 V for gate bounce immunity

Low body diode Vf for reduced losses and simplified dead-time adjustments

Transient over-voltage capability for increased robustness

CCPAK package technology:Improved reliability, with reduced Rth(j-mb) for optimal cooling

Lower inductances for lower switching losses and EMI

150 °C maximum junction temperature

High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

Visual (AOI) soldering inspection, no need for expensive x-ray equipment

Easy solder wetting for good mechanical solder joints

Typical applications

More information

Parts approved by Onsemi

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Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
L(µH)
IRP,40K(A)
ISAT,30%(A)
RDC typ.(mΩ)
fres(MHz)
VOP(V)
Mount
VIN
VOut1(V)
IOut1(mA)
VOut2(V)
IOut2(mA)
Vaux(V)
ISAT(A)
VT(V (AC))
fswitch(kHz)
NPRI : NSEC : NAUX
L(mm)
W(mm)
H(mm)
Size
SamplesAvailability & Sample
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74438323047
SPECWE-MAPI SMT Power Inductor, 4.7 µH, 1.4 A
Simu­lation
Availability
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Downloads10 files

Status
ActiveProduction is active. Expected lifetime: >10 years.
iProduction is active. Expected lifetime: >10 years.
Product seriesWE-MAPI SMT Power Inductor
Inductance4.7 µH
Performance Rated Current1.4 A
Saturation Current @ 30%2.3 A
DC Resistance338 mΩ
Self Resonant Frequency35 MHz
Operating Voltage80 V
MountSMT 
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Saturation Current1.75 A
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Length2.5 mm
Width2 mm
Height1 mm
Size2510 
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750314352
SPECWE-OLSTM Offline Flyback Transformers, 900 µH, –
Simu­lation
Availability
–
Downloads10 files

Status
ActiveProduction is active. Expected lifetime: >10 years.
iProduction is active. Expected lifetime: >10 years.
Product seriesWE-OLSTM Offline Flyback Transformers
Inductance900 µH
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MountTHT 
Input Voltage 85 - 265 V (AC)
Output Voltage 115 V
Output Current 1700 mA
Output Voltage 26 V
Output Current 2100 mA
Auxiliary Voltage12 V
Saturation Current0.82 A
Insulation Test Voltage1500 V (AC)
Switching Frequency 115
Turns Ratio11.9:1.33:1:2.11 
Length18.5 mm
Width16.5 mm
Height18.8 mm
SizeEE16/7/5 
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