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Intel STRATIX V GX F1517

Stratix V GX FPGA Development Board Reference Manual

Details

TopologieAufwärtswandler
IC-Revision1.6

Beschreibung

The Stratix V GX FPGA development board provides a hardware platform fordeveloping and prototyping high-performance and high-bandwidth application designs. The board provides a wide range of peripherals and memory interfaces to facilitate the development of Stratix V GX FPGA designs.

Two High-Speed Mezzanine Card (HSMC) connectors are available to add additional functionality via a variety of HSMC cards available from both Altera and various partners.

f To see a list of the latest HSMC cards available or to download a copy of the HSMC specification, refer to the Development Board Daughtercards page of the Altera website.

Design advancements and innovations, such as the PCI Express hard IPimplementation, partial reconfiguration, and programmable power technology ensure that designs implemented in the Stratix V GX FPGAs operate faster, with lower power than in previous FPGA families.

Eigenschaften

  • Altera Stratix V FPGA (5SGXEA7K2F40C2N) in the 1517-pin FineLine BGA Package
  • 622,000 LEs
  • 234,720 adaptive logic modules (ALMs)
  • 50-Mbits (Mb) embedded memory
  • 36 transceivers (12.5 Gbps)
  • 174 full-duplex LVDS channels
  • 28 phase locked loops (PLLs)
  • 512 18x18-bit multipliers
  • 900-mV core voltage
  • 696 user I/Os
  • 2 PCI Express hard IP blocks
  • MAX® V CPLD (5M2210ZF256C4) System Controller in the 256-pin FineLine BGA Package
  • 2,210 LEs
  • 203 user I/Os
  • 1.8-V core voltage
  • FPGA Configuration Circuitry
  • MAX II CPLD (EPM570GM100) and Flash Fast Passive Parallel (FPP)-configuration
  • On-Board USB-BlasterTM II for use with the Quartus® II Programmer, Nios® II
  • Software Build Tools, and System Console.
  • On-Board Clocking Circuitry
  • 50-MHz, 100-MHz, 125-MHz, and programmable oscillators
  • SMA connector for clock input (LVPECL)
  • Memory devices
  • 1152-Mbyte (MB) DDR3 SDRAM with a 72-bit data bus
  • 72-MB CIO RLDRAM II with a 18-bit data bus
  • 4.5-MB QDRII+ SRAM with a 18-bit data bus (footprint is compatible for
  • 9-Mbyte QDRII with a 18-bit data bus)
  • Two 512-Mb synchronous flash with a 16-bit data bus
  • Communication Ports
  • PCI Express (PCIe) x8 edge connector
  • Two HSMC ports
  • One universal HSMC port A
  • One DQS-type HSMC port B
  • SMB for SDI input and output
  • QSFP
  • USB 2.0
  • Gigabit Ethernet
  • LCD header
  • General User I/O
  • 16 user LEDs
  • Two-line character LCD display
  • Six configuration status LEDs
  • One transmit/receive LED (TX/RX) per HSMC interface
  • Five PCI Express LEDs
  • Four Ethernet LEDs
  • Push Buttons and DIP Switches
  • One CPU reset push button
  • Three general user push buttons
  • Two configuration push buttons
  • Eight user DIP switches
  • Four MAX V control DIP switches
  • Power
  • 19-V (laptop) DC input
  • PCI Express edge connector power
  • On-Board power measurement circuitry
  • System Monitoring
  • Power—voltage, current, wattage
  • Temperature—FPGA die, local board
  • Mechanical
  • PCI Express short form factor
  • PCI Express chassis or bench-top operation

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(nH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
LR(nH)
IR(A)
Z @ 100 MHz(Ω)
Zmax(Ω)
Testbedingung Zmax
IR 2(mA)
RDC max.(mΩ)
Typ
Muster
WE-HCM SMT-Hochstrominduktivität, 330 nH, 54.3 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität330 nH
Performance Nennstrom54.3 A
Sättigungsstrom 127.3 A
Sättigungsstrom @ 30%32 A
Gleichstromwiderstand0.37 mΩ
Eigenresonanzfrequenz35 MHz
MaterialMnZn 
Nenninduktivität305 nH
Nennstrom25 A
WE-HCI SMT-Hochstrominduktivität, 2000 nH, 13.8 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität2000 nH
Performance Nennstrom13.8 A
Sättigungsstrom 14.5 A
Sättigungsstrom @ 30%9 A
Gleichstromwiderstand5.85 mΩ
Eigenresonanzfrequenz68 MHz
MaterialSuperflux 
Nenninduktivität1350 nH
Gleichstromwiderstand6.435 mΩ
WE-HCI SMT-Hochstrominduktivität, 2000 nH, 26.5 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität2000 nH
Performance Nennstrom26.5 A
Sättigungsstrom 19 A
Sättigungsstrom @ 30%22 A
Gleichstromwiderstand2.6 mΩ
Eigenresonanzfrequenz45 MHz
MaterialWE-PERM 
Nenninduktivität1400 nH
Gleichstromwiderstand2.75 mΩ
WE-CBF SMT-Ferrit, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
ProduktserieWE-CBF SMT-Ferrit
Nennstrom2 A
Impedanz @ 100 MHz30 Ω
Maximale Impedanz40 Ω
Maximale Impedanz1000 MHz 
Nennstrom 23000 mA
Gleichstromwiderstand40 mΩ
TypHochstrom