Infineon Technologies 2ED3146MC12L | Demoboard Eval-2ED3146MC12L-SiC

Beschreibung

This evaluation board is designed to evaluate the 2ED3146MC12L isolated gate driver IC in a half-bridge configuation. This board includes one 2ED3146MC12L, two IMZA120R020M1H CoolSiC™ 1200 V SiC Trench MOSFETs, and a galvanically isolated on-board power supply generated with the EiceDRIVER Power 2EP130R transformer driver IC. The board can be used to evaluate other ICs from the 2ED314xMC12L family by replacing the gate driver IC.

Eigenschaften

• Dual-channel isolated gate driver
• To be used with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si, and SiC MOSFETs
• Up to 6.5 A typical peak output current
• 39 ns propagation delay with 5 ns channel-to-channel delay mismatch (skew)
• 35 V absolute maximum output supply voltage
• High common-mode transient immunity, CMTI > 200 kV/µs
• Active shutdown and short circuit clamping
• Galvanically isolated coreless transformer gate driver
• 3.3 V and 5 V input supply voltage
• 8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance
• Safety certification
• UL 1577 (File 311313) with VISO,test = 6840 V (rms) for 1 s, VISO = 5700 V (rms) for 60 s
• Reinforced insulation according to IEC 60747-17 (Certificate no. 40055138) with VIORM = 1767 V(peak)

Typische Anwendungen

• Rail power supplies, Ev charging
• AC and brushless DC motor drives, High voltage DC-DC converters and DC-AC inverters
• Solar inverters
• Server and telecom switched-mode power supplies (SMPS), UPS systems
• Commercial air conditioners (CAC)

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers