<?xml version="1.0" encoding="utf-8"?>
<!DOCTYPE eagle SYSTEM "eagle.dtd">
<eagle version="9.7.0">
<drawing>
<library>
<description>&lt;BR&gt;Wurth Elektronik - Passive Components - Power Magnetics - Transformers For DC/DC Converter - WE-AGDT&lt;br&gt;

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&lt;b&gt;Würth Elektronik eiSos GmbH &amp; Co. KG&lt;/b&gt;&lt;br&gt;
EMC &amp; Inductive Solutions&lt;br&gt;

Max-Eyth-Str.1&lt;br&gt;
D-74638 Waldenburg&lt;br&gt;
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Tel: +49 (0)7942-945-0&lt;br&gt;
Fax:+49 (0)7942-945-5000&lt;br&gt;
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&lt;a href="http://www.we-online.com/web/en/electronic_components/produkte_pb/bauteilebibliotheken/eagle_4.php"&gt;www.we-online.com/eagle&lt;/a&gt;&lt;br&gt;
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Disclaimer: While Würth Elektronik eiSos has made every reasonable effort to ensure the accuracy of the PCB layout models provided, &lt;br&gt;
Würth Elektronik eiSos does not guarantee the exemption of error on the PCB layout models, nor does Würth Elektronik eiSos guarantee that the PCB layout model is current. &lt;br&gt;
Würth Elektronik eiSos reserves the right to make any adjustments at any time without notice. &lt;br&gt;
Würth Elektronik eiSos expressly disclaims all implied warranties regarding this PCB layout model. &lt;br&gt;
 &lt;br&gt;
Please contact us for more information.&lt;br&gt;
&lt;HR&gt;
&lt;br&gt;Eagle Version 9, Library Revision 2025a, 2025-05-13&lt;br&gt;
&lt;HR&gt;
Copyright: Würth Elektronik</description>
<packages>
<package name="WE-AGDT_EP7">
<description>WE-AGDT Auxiliary Gate Drive Transformer 

Size: EP7,SMT,8Pins 
L X W X H= 11.3mm X 10.95mm X 11.94mm</description>
</package>
<package name="WE-AGDT_2015">
<description>WE-AGDT Auxiliary Gate Drive Transformer 

Size: 2015,SMT,8Pins 
</description>
</package>
</packages>
<symbols>
<symbol name="750319331">
<pin name="1" direction="pas"/>
<pin name="6" direction="pas"/>
<pin name="3" direction="pas"/>
<pin name="8" direction="pas"/>
</symbol>
<symbol name="WE-AGDT_EP7_75031983X">
<pin name="8" direction="pas"/>
<pin name="6" direction="pas"/>
<pin name="3" direction="pas"/>
<pin name="1" direction="pas"/>
</symbol>
<symbol name="750319565">
<pin name="1" direction="pas"/>
<pin name="6" direction="pas"/>
<pin name="3" direction="pas"/>
<pin name="8" direction="pas"/>
</symbol>
<symbol name="750319177">
<pin name="1" direction="pas"/>
<pin name="6" direction="pas"/>
<pin name="3" direction="pas"/>
<pin name="8" direction="pas"/>
</symbol>
<symbol name="750318616">
<pin name="1" direction="pas"/>
<pin name="5" direction="pas"/>
<pin name="3" direction="pas"/>
<pin name="8" direction="pas"/>
<pin name="2" direction="pas"/>
<pin name="4" direction="pas"/>
</symbol>
<symbol name="750319282">
<pin name="2" direction="pas"/>
<pin name="6" direction="pas"/>
<pin name="1" direction="pas"/>
<pin name="5" direction="pas"/>
<pin name="3" direction="pas"/>
<pin name="4" direction="pas"/>
<pin name="7" direction="pas"/>
<pin name="8" direction="pas"/>
</symbol>
<symbol name="750318207">
<pin name="8" direction="pas"/>
<pin name="5" direction="pas"/>
<pin name="4" direction="pas"/>
<pin name="1" direction="pas"/>
</symbol>
<symbol name="750318114">
<pin name="8" direction="pas"/>
<pin name="6" direction="pas"/>
<pin name="3" direction="pas"/>
<pin name="4" direction="pas"/>
<pin name="2" direction="pas"/>
<pin name="1" direction="pas"/>
</symbol>
<symbol name="750319496">
<pin name="2" direction="pas"/>
<pin name="6" direction="pas"/>
<pin name="4" direction="pas"/>
<pin name="8" direction="pas"/>
<pin name="1" direction="pas"/>
<pin name="3" direction="pas"/>
<pin name="5" direction="pas"/>
<pin name="7" direction="pas"/>
</symbol>
<symbol name="750318208">
<pin name="8" direction="pas"/>
<pin name="5" direction="pas"/>
<pin name="4" direction="pas"/>
<pin name="1" direction="pas"/>
<pin name="7" direction="pas"/>
<pin name="6" direction="pas"/>
</symbol>
<symbol name="750319497">
<pin name="2" direction="pas"/>
<pin name="6" direction="pas"/>
<pin name="4" direction="pas"/>
<pin name="8" direction="pas"/>
<pin name="1" direction="pas"/>
<pin name="3" direction="pas"/>
<pin name="5" direction="pas"/>
<pin name="7" direction="pas"/>
</symbol>
<symbol name="750318131">
<pin name="8" direction="pas"/>
<pin name="6" direction="pas"/>
<pin name="3" direction="pas"/>
<pin name="4" direction="pas"/>
<pin name="2" direction="pas"/>
<pin name="1" direction="pas"/>
<pin name="7" direction="pas"/>
<pin name="5" direction="pas"/>
</symbol>
<symbol name="750319077">
<pin name="2" direction="pas"/>
<pin name="1" direction="pas"/>
<pin name="5" direction="pas"/>
<pin name="3" direction="pas"/>
<pin name="4" direction="pas"/>
<pin name="7" direction="pas"/>
<pin name="8" direction="pas"/>
<pin name="6" direction="pas"/>
</symbol>
<symbol name="750317894">
<pin name="8" direction="pas"/>
<pin name="5" direction="pas"/>
<pin name="4" direction="pas"/>
<pin name="1" direction="pas"/>
<pin name="7" direction="pas"/>
<pin name="6" direction="pas"/>
</symbol>
<symbol name="750317893">
<pin name="8" direction="pas"/>
<pin name="5" direction="pas"/>
<pin name="3" direction="pas"/>
<pin name="4" direction="pas"/>
<pin name="2" direction="pas"/>
<pin name="1" direction="pas"/>
</symbol>
<symbol name="WE-AGDT_2015">
<pin name="S1" direction="pas"/>
<pin name="S2" direction="pas"/>
<pin name="P2" direction="pas"/>
<pin name="P1" direction="pas"/>
<pin name="S3" direction="pas"/>
<pin name="S4" direction="pas"/>
</symbol>
<symbol name="WE-AGDT_2015-1">
<pin name="S1" direction="pas"/>
<pin name="S2" direction="pas"/>
<pin name="P2" direction="pas"/>
<pin name="P1" direction="pas"/>
<pin name="S3" direction="pas"/>
<pin name="S4" direction="pas"/>
</symbol>
<symbol name="WE-AGDT_2015-2">
<pin name="S1" direction="pas"/>
<pin name="S2" direction="pas"/>
<pin name="P2" direction="pas"/>
<pin name="P1" direction="pas"/>
<pin name="S3" direction="pas"/>
<pin name="S4" direction="pas"/>
</symbol>
<symbol name="WE-AGDT_2015-3">
<pin name="S1" direction="pas"/>
<pin name="S2" direction="pas"/>
<pin name="P2" direction="pas"/>
<pin name="P1" direction="pas"/>
<pin name="S3" direction="pas"/>
<pin name="S4" direction="pas"/>
</symbol>
<symbol name="WE-AGDT_2015-4">
<pin name="S1" direction="pas"/>
<pin name="S2" direction="pas"/>
<pin name="P2" direction="pas"/>
<pin name="P1" direction="pas"/>
<pin name="S3" direction="pas"/>
<pin name="S4" direction="pas"/>
</symbol>
<symbol name="WE-AGDT_2015-5">
<pin name="S1" direction="pas"/>
<pin name="S2" direction="pas"/>
<pin name="P2" direction="pas"/>
<pin name="P1" direction="pas"/>
<pin name="S3" direction="pas"/>
<pin name="S4" direction="pas"/>
</symbol>
<symbol name="WE-AGDT_2015-6">
<pin name="S1" direction="pas"/>
<pin name="S2" direction="pas"/>
<pin name="P2" direction="pas"/>
<pin name="P1" direction="pas"/>
<pin name="S3" direction="pas"/>
<pin name="S4" direction="pas"/>
</symbol>
<symbol name="WE-AGDT_2015-7">
<pin name="S1" direction="pas"/>
<pin name="S2" direction="pas"/>
<pin name="P2" direction="pas"/>
<pin name="P1" direction="pas"/>
<pin name="S3" direction="pas"/>
<pin name="S4" direction="pas"/>
</symbol>
<symbol name="WE-AGDT_2015-8">
<pin name="S1" direction="pas"/>
<pin name="S2" direction="pas"/>
<pin name="P2" direction="pas"/>
<pin name="P1" direction="pas"/>
<pin name="S3" direction="pas"/>
<pin name="S4" direction="pas"/>
</symbol>
</symbols>
<devicesets>
<deviceset name="750319835" prefix="T">
<description>&lt;b&gt; WE-AGDT Auxiliary Gate Drive Transformer 
&lt;br&gt;&lt;/b&gt;for SiC-MOSFET and IGBT 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Characteristics
&lt;br&gt;
&lt;br&gt; &lt;/b&gt;&lt;/b&gt;Interwinding capacitance down to &lt;1 pF
&lt;br&gt;Tiny surface mount EP7 package
&lt;br&gt;Dielectric insulation up to 4 kV AC
&lt;br&gt;Basic insulation for 568 Vrms / 800 Vpk
&lt;br&gt;Safety: IEC62368-1 / IEC61558-2-16
&lt;br&gt;AEC-Q200 qualification
&lt;br&gt;Operating temperature: -40 °C up to +130 °C
&lt;br&gt;Common control voltages for SiC MOSFET’s
&lt;br&gt;High Common-mode Transient Immunity (CMTI)
&lt;br&gt;Flyback, LLC, Half-Bridge topologies
&lt;br&gt;Up to 6 W output power
&lt;br&gt;Wide range input voltages 6 V to 36 V
&lt;br&gt;Different unipolar and bipolar voltages
&lt;br&gt;High efficiency and very compact solution
&lt;br&gt;Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Applications
&lt;br&gt;
&lt;br&gt;&lt;/b&gt;Industrial drives
&lt;br&gt;AC motor inverters
&lt;br&gt;HEV/EV charging station
&lt;br&gt;Battery chargers
&lt;br&gt;Solar inverters
&lt;br&gt;Data centers
&lt;br&gt;Uninterruptible power supplies
&lt;br&gt;Active power factor correction
&lt;br&gt;SiC-MOSFET based power converter
&lt;br&gt;
&lt;br&gt;
&lt;br&gt;&lt;a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture"&gt;
&lt;img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"&gt;&lt;/a&gt;&lt;p&gt;
Details see: &lt;a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&amp;utm_medium=description_link&amp;utm_campaign=eisos_eagle"&gt;www.we-online.com/en/components/products/WE-AGDT&lt;/a&gt;&lt;p&gt;

Updated by Ella 2025-05-13&lt;br&gt;
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="WE-AGDT_EP7_75031983X"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="2.1pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319835?ae"/>
<attribute name="FSWITCH" value="500kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="23uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="1:1.29"/>
<attribute name="PART-NUMBER" value="750319835"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="7.5Vin, 9Vout"/>
<attribute name="VERSION" value="LLC"/>
<attribute name="VIN" value="7.5V"/>
<attribute name="VOLTAGE-TIME" value="40Vus"/>
<attribute name="VOUT1" value="9V"/>
<attribute name="WIDTH" value="10.95mm"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319836" prefix="T">
<description>&lt;b&gt; WE-AGDT Auxiliary Gate Drive Transformer 
&lt;br&gt;&lt;/b&gt;for SiC-MOSFET and IGBT 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Characteristics
&lt;br&gt;
&lt;br&gt; &lt;/b&gt;&lt;/b&gt;Interwinding capacitance down to &lt;1 pF
&lt;br&gt;Tiny surface mount EP7 package
&lt;br&gt;Dielectric insulation up to 4 kV AC
&lt;br&gt;Basic insulation for 568 Vrms / 800 Vpk
&lt;br&gt;Safety: IEC62368-1 / IEC61558-2-16
&lt;br&gt;AEC-Q200 qualification
&lt;br&gt;Operating temperature: -40 °C up to +130 °C
&lt;br&gt;Common control voltages for SiC MOSFET’s
&lt;br&gt;High Common-mode Transient Immunity (CMTI)
&lt;br&gt;Flyback, LLC, Half-Bridge topologies
&lt;br&gt;Up to 6 W output power
&lt;br&gt;Wide range input voltages 6 V to 36 V
&lt;br&gt;Different unipolar and bipolar voltages
&lt;br&gt;High efficiency and very compact solution
&lt;br&gt;Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Applications
&lt;br&gt;
&lt;br&gt;&lt;/b&gt;Industrial drives
&lt;br&gt;AC motor inverters
&lt;br&gt;HEV/EV charging station
&lt;br&gt;Battery chargers
&lt;br&gt;Solar inverters
&lt;br&gt;Data centers
&lt;br&gt;Uninterruptible power supplies
&lt;br&gt;Active power factor correction
&lt;br&gt;SiC-MOSFET based power converter
&lt;br&gt;
&lt;br&gt;
&lt;br&gt;&lt;a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture"&gt;
&lt;img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"&gt;&lt;/a&gt;&lt;p&gt;
Details see: &lt;a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&amp;utm_medium=description_link&amp;utm_campaign=eisos_eagle"&gt;www.we-online.com/en/components/products/WE-AGDT&lt;/a&gt;&lt;p&gt;

Updated by Ella 2025-05-13&lt;br&gt;
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="WE-AGDT_EP7_75031983X"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="2pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319836?ae"/>
<attribute name="FSWITCH" value="500kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="23uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="1:1.57"/>
<attribute name="PART-NUMBER" value="750319836"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="6Vin, 9Vout"/>
<attribute name="VERSION" value="LLC"/>
<attribute name="VIN" value="6V"/>
<attribute name="VOLTAGE-TIME" value="40Vus"/>
<attribute name="VOUT1" value="9V"/>
<attribute name="WIDTH" value="10.95mm"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319331" prefix="T">
<description>&lt;b&gt; WE-AGDT Auxiliary Gate Drive Transformer 
&lt;br&gt;&lt;/b&gt;for SiC-MOSFET and IGBT 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Characteristics
&lt;br&gt;
&lt;br&gt; &lt;/b&gt;&lt;/b&gt;Interwinding capacitance down to &lt;1 pF
&lt;br&gt;Tiny surface mount EP7 package
&lt;br&gt;Dielectric insulation up to 4 kV AC
&lt;br&gt;Basic insulation for 568 Vrms / 800 Vpk
&lt;br&gt;Safety: IEC62368-1 / IEC61558-2-16
&lt;br&gt;AEC-Q200 qualification
&lt;br&gt;Operating temperature: -40 °C up to +130 °C
&lt;br&gt;Common control voltages for SiC MOSFET’s
&lt;br&gt;High Common-mode Transient Immunity (CMTI)
&lt;br&gt;Flyback, LLC, Half-Bridge topologies
&lt;br&gt;Up to 6 W output power
&lt;br&gt;Wide range input voltages 6 V to 36 V
&lt;br&gt;Different unipolar and bipolar voltages
&lt;br&gt;High efficiency and very compact solution
&lt;br&gt;Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Applications
&lt;br&gt;
&lt;br&gt;&lt;/b&gt;Industrial drives
&lt;br&gt;AC motor inverters
&lt;br&gt;HEV/EV charging station
&lt;br&gt;Battery chargers
&lt;br&gt;Solar inverters
&lt;br&gt;Data centers
&lt;br&gt;Uninterruptible power supplies
&lt;br&gt;Active power factor correction
&lt;br&gt;SiC-MOSFET based power converter
&lt;br&gt;
&lt;br&gt;
&lt;br&gt;&lt;a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture"&gt;
&lt;img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"&gt;&lt;/a&gt;&lt;p&gt;
Details see: &lt;a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&amp;utm_medium=description_link&amp;utm_campaign=eisos_eagle"&gt;www.we-online.com/en/components/products/WE-AGDT&lt;/a&gt;&lt;p&gt;

Updated by Ella 2025-05-13&lt;br&gt;
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="750319331"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="1.3pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319331?ae"/>
<attribute name="FSWITCH" value="500kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="50uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="1:1"/>
<attribute name="PART-NUMBER" value="750319331"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="13Vin, 11.5Vout"/>
<attribute name="VERSION" value="LLC"/>
<attribute name="VIN" value="13V"/>
<attribute name="VOLTAGE-TIME" value="60Vus"/>
<attribute name="VOUT1" value="11.5V"/>
<attribute name="WIDTH" value="10.95mm"/>
<attribute name="PO" value="6W"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319834" prefix="T">
<description>&lt;b&gt; WE-AGDT Auxiliary Gate Drive Transformer 
&lt;br&gt;&lt;/b&gt;for SiC-MOSFET and IGBT 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Characteristics
&lt;br&gt;
&lt;br&gt; &lt;/b&gt;&lt;/b&gt;Interwinding capacitance down to &lt;1 pF
&lt;br&gt;Tiny surface mount EP7 package
&lt;br&gt;Dielectric insulation up to 4 kV AC
&lt;br&gt;Basic insulation for 568 Vrms / 800 Vpk
&lt;br&gt;Safety: IEC62368-1 / IEC61558-2-16
&lt;br&gt;AEC-Q200 qualification
&lt;br&gt;Operating temperature: -40 °C up to +130 °C
&lt;br&gt;Common control voltages for SiC MOSFET’s
&lt;br&gt;High Common-mode Transient Immunity (CMTI)
&lt;br&gt;Flyback, LLC, Half-Bridge topologies
&lt;br&gt;Up to 6 W output power
&lt;br&gt;Wide range input voltages 6 V to 36 V
&lt;br&gt;Different unipolar and bipolar voltages
&lt;br&gt;High efficiency and very compact solution
&lt;br&gt;Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Applications
&lt;br&gt;
&lt;br&gt;&lt;/b&gt;Industrial drives
&lt;br&gt;AC motor inverters
&lt;br&gt;HEV/EV charging station
&lt;br&gt;Battery chargers
&lt;br&gt;Solar inverters
&lt;br&gt;Data centers
&lt;br&gt;Uninterruptible power supplies
&lt;br&gt;Active power factor correction
&lt;br&gt;SiC-MOSFET based power converter
&lt;br&gt;
&lt;br&gt;
&lt;br&gt;&lt;a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture"&gt;
&lt;img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"&gt;&lt;/a&gt;&lt;p&gt;
Details see: &lt;a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&amp;utm_medium=description_link&amp;utm_campaign=eisos_eagle"&gt;www.we-online.com/en/components/products/WE-AGDT&lt;/a&gt;&lt;p&gt;

Updated by Ella 2025-05-13&lt;br&gt;
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="WE-AGDT_EP7_75031983X"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="2.6pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319834?ae"/>
<attribute name="FSWITCH" value="500kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="67uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="1:1.08"/>
<attribute name="PART-NUMBER" value="750319834"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="7.5Vin, 7.5Vout"/>
<attribute name="VERSION" value="LLC"/>
<attribute name="VIN" value="7.5V"/>
<attribute name="VOLTAGE-TIME" value="70Vus"/>
<attribute name="VOUT1" value="7.5V"/>
<attribute name="WIDTH" value="10.95mm"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319833" prefix="T">
<description>&lt;b&gt; WE-AGDT Auxiliary Gate Drive Transformer 
&lt;br&gt;&lt;/b&gt;for SiC-MOSFET and IGBT 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Characteristics
&lt;br&gt;
&lt;br&gt; &lt;/b&gt;&lt;/b&gt;Interwinding capacitance down to &lt;1 pF
&lt;br&gt;Tiny surface mount EP7 package
&lt;br&gt;Dielectric insulation up to 4 kV AC
&lt;br&gt;Basic insulation for 568 Vrms / 800 Vpk
&lt;br&gt;Safety: IEC62368-1 / IEC61558-2-16
&lt;br&gt;AEC-Q200 qualification
&lt;br&gt;Operating temperature: -40 °C up to +130 °C
&lt;br&gt;Common control voltages for SiC MOSFET’s
&lt;br&gt;High Common-mode Transient Immunity (CMTI)
&lt;br&gt;Flyback, LLC, Half-Bridge topologies
&lt;br&gt;Up to 6 W output power
&lt;br&gt;Wide range input voltages 6 V to 36 V
&lt;br&gt;Different unipolar and bipolar voltages
&lt;br&gt;High efficiency and very compact solution
&lt;br&gt;Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Applications
&lt;br&gt;
&lt;br&gt;&lt;/b&gt;Industrial drives
&lt;br&gt;AC motor inverters
&lt;br&gt;HEV/EV charging station
&lt;br&gt;Battery chargers
&lt;br&gt;Solar inverters
&lt;br&gt;Data centers
&lt;br&gt;Uninterruptible power supplies
&lt;br&gt;Active power factor correction
&lt;br&gt;SiC-MOSFET based power converter
&lt;br&gt;
&lt;br&gt;
&lt;br&gt;&lt;a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture"&gt;
&lt;img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"&gt;&lt;/a&gt;&lt;p&gt;
Details see: &lt;a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&amp;utm_medium=description_link&amp;utm_campaign=eisos_eagle"&gt;www.we-online.com/en/components/products/WE-AGDT&lt;/a&gt;&lt;p&gt;

Updated by Ella 2025-05-13&lt;br&gt;
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="WE-AGDT_EP7_75031983X"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="2pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319833?ae"/>
<attribute name="FSWITCH" value="500kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="67uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="1.2:1"/>
<attribute name="PART-NUMBER" value="750319833"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="15Vin, 12Vout"/>
<attribute name="VERSION" value="LLC"/>
<attribute name="VIN" value="15V"/>
<attribute name="VOLTAGE-TIME" value="70Vus"/>
<attribute name="VOUT1" value="12V"/>
<attribute name="WIDTH" value="10.95mm"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319177" prefix="T">
<description>&lt;b&gt; WE-AGDT Auxiliary Gate Drive Transformer 
&lt;br&gt;&lt;/b&gt;for SiC-MOSFET and IGBT 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Characteristics
&lt;br&gt;
&lt;br&gt; &lt;/b&gt;&lt;/b&gt;Interwinding capacitance down to &lt;1 pF
&lt;br&gt;Tiny surface mount EP7 package
&lt;br&gt;Dielectric insulation up to 4 kV AC
&lt;br&gt;Basic insulation for 568 Vrms / 800 Vpk
&lt;br&gt;Safety: IEC62368-1 / IEC61558-2-16
&lt;br&gt;AEC-Q200 qualification
&lt;br&gt;Operating temperature: -40 °C up to +130 °C
&lt;br&gt;Common control voltages for SiC MOSFET’s
&lt;br&gt;High Common-mode Transient Immunity (CMTI)
&lt;br&gt;Flyback, LLC, Half-Bridge topologies
&lt;br&gt;Up to 6 W output power
&lt;br&gt;Wide range input voltages 6 V to 36 V
&lt;br&gt;Different unipolar and bipolar voltages
&lt;br&gt;High efficiency and very compact solution
&lt;br&gt;Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Applications
&lt;br&gt;
&lt;br&gt;&lt;/b&gt;Industrial drives
&lt;br&gt;AC motor inverters
&lt;br&gt;HEV/EV charging station
&lt;br&gt;Battery chargers
&lt;br&gt;Solar inverters
&lt;br&gt;Data centers
&lt;br&gt;Uninterruptible power supplies
&lt;br&gt;Active power factor correction
&lt;br&gt;SiC-MOSFET based power converter
&lt;br&gt;
&lt;br&gt;
&lt;br&gt;&lt;a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture"&gt;
&lt;img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"&gt;&lt;/a&gt;&lt;p&gt;
Details see: &lt;a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&amp;utm_medium=description_link&amp;utm_campaign=eisos_eagle"&gt;www.we-online.com/en/components/products/WE-AGDT&lt;/a&gt;&lt;p&gt;

Updated by Ella 2025-05-13&lt;br&gt;
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="750319177"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="0.68pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319177?ae"/>
<attribute name="FSWITCH" value="500kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="16.5uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="1:1.67"/>
<attribute name="PART-NUMBER" value="750319177"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="7.5Vin, 13Vout"/>
<attribute name="VERSION" value="LLC"/>
<attribute name="VIN" value="7.5V"/>
<attribute name="VOLTAGE-TIME" value="36Vus"/>
<attribute name="VOUT1" value="13V"/>
<attribute name="WIDTH" value="10.95mm"/>
<attribute name="PO" value="4.55W"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319496" prefix="T">
<description>&lt;b&gt; WE-AGDT Auxiliary Gate Drive Transformer 
&lt;br&gt;&lt;/b&gt;for SiC-MOSFET and IGBT 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Characteristics
&lt;br&gt;
&lt;br&gt; &lt;/b&gt;&lt;/b&gt;Interwinding capacitance down to &lt;1 pF
&lt;br&gt;Tiny surface mount EP7 package
&lt;br&gt;Dielectric insulation up to 4 kV AC
&lt;br&gt;Basic insulation for 568 Vrms / 800 Vpk
&lt;br&gt;Safety: IEC62368-1 / IEC61558-2-16
&lt;br&gt;AEC-Q200 qualification
&lt;br&gt;Operating temperature: -40 °C up to +130 °C
&lt;br&gt;Common control voltages for SiC MOSFET’s
&lt;br&gt;High Common-mode Transient Immunity (CMTI)
&lt;br&gt;Flyback, LLC, Half-Bridge topologies
&lt;br&gt;Up to 6 W output power
&lt;br&gt;Wide range input voltages 6 V to 36 V
&lt;br&gt;Different unipolar and bipolar voltages
&lt;br&gt;High efficiency and very compact solution
&lt;br&gt;Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Applications
&lt;br&gt;
&lt;br&gt;&lt;/b&gt;Industrial drives
&lt;br&gt;AC motor inverters
&lt;br&gt;HEV/EV charging station
&lt;br&gt;Battery chargers
&lt;br&gt;Solar inverters
&lt;br&gt;Data centers
&lt;br&gt;Uninterruptible power supplies
&lt;br&gt;Active power factor correction
&lt;br&gt;SiC-MOSFET based power converter
&lt;br&gt;
&lt;br&gt;
&lt;br&gt;&lt;a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture"&gt;
&lt;img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"&gt;&lt;/a&gt;&lt;p&gt;
Details see: &lt;a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&amp;utm_medium=description_link&amp;utm_campaign=eisos_eagle"&gt;www.we-online.com/en/components/products/WE-AGDT&lt;/a&gt;&lt;p&gt;

Updated by Ella 2025-05-13&lt;br&gt;
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="750319496"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="2" pad="2"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="4" pad="4"/>
<connect gate="G$1" pin="5" pad="5"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="7" pad="7"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="7.3pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319496?ae"/>
<attribute name="FSWITCH" value="350kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="7uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="1.8:3.6:1"/>
<attribute name="PART-NUMBER" value="750319496"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="9 - 18Vin, 20Vout"/>
<attribute name="VERSION" value="Flyback"/>
<attribute name="VIN" value="9 - 18V"/>
<attribute name="VOUT1" value="20V"/>
<attribute name="WIDTH" value="10.95mm"/>
<attribute name="PO" value="6W"/>
<attribute name="ISAT" value="4.5A"/>
<attribute name="VOUT2" value="5V"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750318114" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

Updated by Ella 2025-05-13
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="750318114"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="2" pad="2"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="4" pad="4"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="6.8pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750318114?ae"/>
<attribute name="FSWITCH" value="350kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="6uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="1:2"/>
<attribute name="PART-NUMBER" value="750318114"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="9 - 18Vin, 19Vout"/>
<attribute name="VERSION" value="Flyback"/>
<attribute name="VIN" value="9 - 18V"/>
<attribute name="VOUT1" value="19V"/>
<attribute name="WIDTH" value="10.95mm"/>
<attribute name="PO" value="6W"/>
<attribute name="ISAT" value="6.2A"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319282" prefix="T">
<description>&lt;b&gt; WE-AGDT Auxiliary Gate Drive Transformer 
&lt;br&gt;&lt;/b&gt;for SiC-MOSFET and IGBT 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Characteristics
&lt;br&gt;
&lt;br&gt; &lt;/b&gt;&lt;/b&gt;Interwinding capacitance down to &lt;1 pF
&lt;br&gt;Tiny surface mount EP7 package
&lt;br&gt;Dielectric insulation up to 4 kV AC
&lt;br&gt;Basic insulation for 568 Vrms / 800 Vpk
&lt;br&gt;Safety: IEC62368-1 / IEC61558-2-16
&lt;br&gt;AEC-Q200 qualification
&lt;br&gt;Operating temperature: -40 °C up to +130 °C
&lt;br&gt;Common control voltages for SiC MOSFET’s
&lt;br&gt;High Common-mode Transient Immunity (CMTI)
&lt;br&gt;Flyback, LLC, Half-Bridge topologies
&lt;br&gt;Up to 6 W output power
&lt;br&gt;Wide range input voltages 6 V to 36 V
&lt;br&gt;Different unipolar and bipolar voltages
&lt;br&gt;High efficiency and very compact solution
&lt;br&gt;Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Applications
&lt;br&gt;
&lt;br&gt;&lt;/b&gt;Industrial drives
&lt;br&gt;AC motor inverters
&lt;br&gt;HEV/EV charging station
&lt;br&gt;Battery chargers
&lt;br&gt;Solar inverters
&lt;br&gt;Data centers
&lt;br&gt;Uninterruptible power supplies
&lt;br&gt;Active power factor correction
&lt;br&gt;SiC-MOSFET based power converter
&lt;br&gt;
&lt;br&gt;
&lt;br&gt;&lt;a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture"&gt;
&lt;img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"&gt;&lt;/a&gt;&lt;p&gt;
Details see: &lt;a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&amp;utm_medium=description_link&amp;utm_campaign=eisos_eagle"&gt;www.we-online.com/en/components/products/WE-AGDT&lt;/a&gt;&lt;p&gt;

Updated by Ella 2025-05-13&lt;br&gt;
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="750319282"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="2" pad="2"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="4" pad="4"/>
<connect gate="G$1" pin="5" pad="5"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="7" pad="7"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="6.4pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319282?ae"/>
<attribute name="FSWITCH" value="150kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="42uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="1.56:3.89:1:1:1"/>
<attribute name="PART-NUMBER" value="750319282"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="6 - 18Vin, 20Vout"/>
<attribute name="VERSION" value="Flyback"/>
<attribute name="VIN" value="6 - 18V"/>
<attribute name="VOUT1" value="20V"/>
<attribute name="WIDTH" value="10.95mm"/>
<attribute name="PO" value="1.5W"/>
<attribute name="ISAT" value="1.2A"/>
<attribute name="VOUT2" value="5V"/>
<attribute name="VAUX" value="5V"/>
<attribute name="VOUT3" value="5V"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319565" prefix="T">
<description>&lt;b&gt; WE-AGDT Auxiliary Gate Drive Transformer 
&lt;br&gt;&lt;/b&gt;for SiC-MOSFET and IGBT 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Characteristics
&lt;br&gt;
&lt;br&gt; &lt;/b&gt;&lt;/b&gt;Interwinding capacitance down to &lt;1 pF
&lt;br&gt;Tiny surface mount EP7 package
&lt;br&gt;Dielectric insulation up to 4 kV AC
&lt;br&gt;Basic insulation for 568 Vrms / 800 Vpk
&lt;br&gt;Safety: IEC62368-1 / IEC61558-2-16
&lt;br&gt;AEC-Q200 qualification
&lt;br&gt;Operating temperature: -40 °C up to +130 °C
&lt;br&gt;Common control voltages for SiC MOSFET’s
&lt;br&gt;High Common-mode Transient Immunity (CMTI)
&lt;br&gt;Flyback, LLC, Half-Bridge topologies
&lt;br&gt;Up to 6 W output power
&lt;br&gt;Wide range input voltages 6 V to 36 V
&lt;br&gt;Different unipolar and bipolar voltages
&lt;br&gt;High efficiency and very compact solution
&lt;br&gt;Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Applications
&lt;br&gt;
&lt;br&gt;&lt;/b&gt;Industrial drives
&lt;br&gt;AC motor inverters
&lt;br&gt;HEV/EV charging station
&lt;br&gt;Battery chargers
&lt;br&gt;Solar inverters
&lt;br&gt;Data centers
&lt;br&gt;Uninterruptible power supplies
&lt;br&gt;Active power factor correction
&lt;br&gt;SiC-MOSFET based power converter
&lt;br&gt;
&lt;br&gt;
&lt;br&gt;&lt;a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture"&gt;
&lt;img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"&gt;&lt;/a&gt;&lt;p&gt;
Details see: &lt;a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&amp;utm_medium=description_link&amp;utm_campaign=eisos_eagle"&gt;www.we-online.com/en/components/products/WE-AGDT&lt;/a&gt;&lt;p&gt;

Updated by Ella 2025-05-13&lt;br&gt;
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="750319565"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="2.1pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319565?ae"/>
<attribute name="FSWITCH" value="250kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="256uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="1:2"/>
<attribute name="PART-NUMBER" value="750319565"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="15Vin, 30Vout"/>
<attribute name="VERSION" value="Half-Bridge"/>
<attribute name="VIN" value="15V"/>
<attribute name="VOLTAGE-TIME" value="72Vus"/>
<attribute name="VOUT1" value="30V"/>
<attribute name="WIDTH" value="10.95mm"/>
<attribute name="PO" value="3W"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319832" prefix="T">
<description>&lt;b&gt; WE-AGDT Auxiliary Gate Drive Transformer 
&lt;br&gt;&lt;/b&gt;for SiC-MOSFET and IGBT 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Characteristics
&lt;br&gt;
&lt;br&gt; &lt;/b&gt;&lt;/b&gt;Interwinding capacitance down to &lt;1 pF
&lt;br&gt;Tiny surface mount EP7 package
&lt;br&gt;Dielectric insulation up to 4 kV AC
&lt;br&gt;Basic insulation for 568 Vrms / 800 Vpk
&lt;br&gt;Safety: IEC62368-1 / IEC61558-2-16
&lt;br&gt;AEC-Q200 qualification
&lt;br&gt;Operating temperature: -40 °C up to +130 °C
&lt;br&gt;Common control voltages for SiC MOSFET’s
&lt;br&gt;High Common-mode Transient Immunity (CMTI)
&lt;br&gt;Flyback, LLC, Half-Bridge topologies
&lt;br&gt;Up to 6 W output power
&lt;br&gt;Wide range input voltages 6 V to 36 V
&lt;br&gt;Different unipolar and bipolar voltages
&lt;br&gt;High efficiency and very compact solution
&lt;br&gt;Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Applications
&lt;br&gt;
&lt;br&gt;&lt;/b&gt;Industrial drives
&lt;br&gt;AC motor inverters
&lt;br&gt;HEV/EV charging station
&lt;br&gt;Battery chargers
&lt;br&gt;Solar inverters
&lt;br&gt;Data centers
&lt;br&gt;Uninterruptible power supplies
&lt;br&gt;Active power factor correction
&lt;br&gt;SiC-MOSFET based power converter
&lt;br&gt;
&lt;br&gt;
&lt;br&gt;&lt;a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture"&gt;
&lt;img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"&gt;&lt;/a&gt;&lt;p&gt;
Details see: &lt;a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&amp;utm_medium=description_link&amp;utm_campaign=eisos_eagle"&gt;www.we-online.com/en/components/products/WE-AGDT&lt;/a&gt;&lt;p&gt;

Updated by Ella 2025-05-13&lt;br&gt;
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="WE-AGDT_EP7_75031983X"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="2pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319832?ae"/>
<attribute name="FSWITCH" value="500kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="56uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="1.83:1"/>
<attribute name="PART-NUMBER" value="750319832"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="15Vin, 7.5Vout"/>
<attribute name="VERSION" value="LLC"/>
<attribute name="VIN" value="15V"/>
<attribute name="VOLTAGE-TIME" value="64Vus"/>
<attribute name="VOUT1" value="7.5V"/>
<attribute name="WIDTH" value="10.95mm"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750318207" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

Updated by Ella 2025-05-13
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="750318207"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="4" pad="4"/>
<connect gate="G$1" pin="5" pad="5"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="8.2pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750318207?ae"/>
<attribute name="FSWITCH" value="350kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="27uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="1:1.2"/>
<attribute name="PART-NUMBER" value="750318207"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="18 - 36Vin, 19Vout"/>
<attribute name="VERSION" value="Flyback"/>
<attribute name="VIN" value="18 - 36V"/>
<attribute name="VOUT1" value="19V"/>
<attribute name="WIDTH" value="10.95mm"/>
<attribute name="PO" value="5W"/>
<attribute name="ISAT" value="2A"/>
<attribute name="VOUT2" value="4V"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750318616" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

Updated by Ella 2025-05-13
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="750318616"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="2" pad="2"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="4" pad="4"/>
<connect gate="G$1" pin="5" pad="5"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="3.25pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750318616?ae"/>
<attribute name="FSWITCH" value="400kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="10uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="1.2:2:1"/>
<attribute name="PART-NUMBER" value="750318616"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="7 - 31Vin, 27Vout"/>
<attribute name="VERSION" value="Flyback"/>
<attribute name="VIN" value="7 - 31V"/>
<attribute name="VOUT1" value="27V"/>
<attribute name="WIDTH" value="10.95mm"/>
<attribute name="PO" value="2.7W"/>
<attribute name="ISAT" value="2A"/>
<attribute name="VAUX" value="13V"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319831" prefix="T">
<description>&lt;b&gt; WE-AGDT Auxiliary Gate Drive Transformer 
&lt;br&gt;&lt;/b&gt;for SiC-MOSFET and IGBT 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Characteristics
&lt;br&gt;
&lt;br&gt; &lt;/b&gt;&lt;/b&gt;Interwinding capacitance down to &lt;1 pF
&lt;br&gt;Tiny surface mount EP7 package
&lt;br&gt;Dielectric insulation up to 4 kV AC
&lt;br&gt;Basic insulation for 568 Vrms / 800 Vpk
&lt;br&gt;Safety: IEC62368-1 / IEC61558-2-16
&lt;br&gt;AEC-Q200 qualification
&lt;br&gt;Operating temperature: -40 °C up to +130 °C
&lt;br&gt;Common control voltages for SiC MOSFET’s
&lt;br&gt;High Common-mode Transient Immunity (CMTI)
&lt;br&gt;Flyback, LLC, Half-Bridge topologies
&lt;br&gt;Up to 6 W output power
&lt;br&gt;Wide range input voltages 6 V to 36 V
&lt;br&gt;Different unipolar and bipolar voltages
&lt;br&gt;High efficiency and very compact solution
&lt;br&gt;Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Applications
&lt;br&gt;
&lt;br&gt;&lt;/b&gt;Industrial drives
&lt;br&gt;AC motor inverters
&lt;br&gt;HEV/EV charging station
&lt;br&gt;Battery chargers
&lt;br&gt;Solar inverters
&lt;br&gt;Data centers
&lt;br&gt;Uninterruptible power supplies
&lt;br&gt;Active power factor correction
&lt;br&gt;SiC-MOSFET based power converter
&lt;br&gt;
&lt;br&gt;
&lt;br&gt;&lt;a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture"&gt;
&lt;img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"&gt;&lt;/a&gt;&lt;p&gt;
Details see: &lt;a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&amp;utm_medium=description_link&amp;utm_campaign=eisos_eagle"&gt;www.we-online.com/en/components/products/WE-AGDT&lt;/a&gt;&lt;p&gt;

Updated by Ella 2025-05-13&lt;br&gt;
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="WE-AGDT_EP7_75031983X"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="2pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319831?ae"/>
<attribute name="FSWITCH" value="500kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="56uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="2.2:1"/>
<attribute name="PART-NUMBER" value="750319831"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="15Vin, 6Vout"/>
<attribute name="VERSION" value="LLC"/>
<attribute name="VIN" value="15V"/>
<attribute name="VOLTAGE-TIME" value="64Vus"/>
<attribute name="VOUT1" value="6V"/>
<attribute name="WIDTH" value="10.95mm"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750318208" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

Updated by Ella 2025-05-13
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="750318208"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="4" pad="4"/>
<connect gate="G$1" pin="5" pad="5"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="7" pad="7"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="7pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750318208?ae"/>
<attribute name="FSWITCH" value="350kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="27uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="3.5:3.5:1"/>
<attribute name="PART-NUMBER" value="750318208"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="18 - 36Vin, 15Vout"/>
<attribute name="VERSION" value="Flyback"/>
<attribute name="VIN" value="18 - 36V"/>
<attribute name="VOUT1" value="15V"/>
<attribute name="WIDTH" value="10.95mm"/>
<attribute name="PO" value="5W"/>
<attribute name="ISAT" value="1.5A"/>
<attribute name="VOUT2" value="-4V"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750318131" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

Updated by Ella 2025-05-13
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="750318131"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="2" pad="2"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="4" pad="4"/>
<connect gate="G$1" pin="5" pad="5"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="7" pad="7"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="7.5pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750318131?ae"/>
<attribute name="FSWITCH" value="350kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="7uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="2.25:3.5:1"/>
<attribute name="PART-NUMBER" value="750318131"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="9 - 18Vin, 15Vout"/>
<attribute name="VERSION" value="Flyback"/>
<attribute name="VIN" value="9 - 18V"/>
<attribute name="VOUT1" value="15V"/>
<attribute name="WIDTH" value="10.95mm"/>
<attribute name="PO" value="6W"/>
<attribute name="ISAT" value="5A"/>
<attribute name="VOUT2" value="-4V"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750317894" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

￼
Updated by Ella 2025-05-13
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="750317894"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="4" pad="4"/>
<connect gate="G$1" pin="5" pad="5"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="7" pad="7"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="7pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750317894?ae"/>
<attribute name="FSWITCH" value="350kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="18uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="2.25:3.5:1"/>
<attribute name="PART-NUMBER" value="750317894"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="9 - 18Vin, 15Vout"/>
<attribute name="VERSION" value="Flyback"/>
<attribute name="VIN" value="9 - 18V"/>
<attribute name="VOUT1" value="15V"/>
<attribute name="WIDTH" value="10.95mm"/>
<attribute name="PO" value="3W"/>
<attribute name="ISAT" value="1.6A"/>
<attribute name="VOUT2" value="-4V"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319497" prefix="T">
<description>&lt;b&gt; WE-AGDT Auxiliary Gate Drive Transformer 
&lt;br&gt;&lt;/b&gt;for SiC-MOSFET and IGBT 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Characteristics
&lt;br&gt;
&lt;br&gt; &lt;/b&gt;&lt;/b&gt;Interwinding capacitance down to &lt;1 pF
&lt;br&gt;Tiny surface mount EP7 package
&lt;br&gt;Dielectric insulation up to 4 kV AC
&lt;br&gt;Basic insulation for 568 Vrms / 800 Vpk
&lt;br&gt;Safety: IEC62368-1 / IEC61558-2-16
&lt;br&gt;AEC-Q200 qualification
&lt;br&gt;Operating temperature: -40 °C up to +130 °C
&lt;br&gt;Common control voltages for SiC MOSFET’s
&lt;br&gt;High Common-mode Transient Immunity (CMTI)
&lt;br&gt;Flyback, LLC, Half-Bridge topologies
&lt;br&gt;Up to 6 W output power
&lt;br&gt;Wide range input voltages 6 V to 36 V
&lt;br&gt;Different unipolar and bipolar voltages
&lt;br&gt;High efficiency and very compact solution
&lt;br&gt;Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
 
&lt;br&gt;
&lt;br&gt;&lt;b&gt; Applications
&lt;br&gt;
&lt;br&gt;&lt;/b&gt;Industrial drives
&lt;br&gt;AC motor inverters
&lt;br&gt;HEV/EV charging station
&lt;br&gt;Battery chargers
&lt;br&gt;Solar inverters
&lt;br&gt;Data centers
&lt;br&gt;Uninterruptible power supplies
&lt;br&gt;Active power factor correction
&lt;br&gt;SiC-MOSFET based power converter
&lt;br&gt;
&lt;br&gt;
&lt;br&gt;&lt;a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture"&gt;
&lt;img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"&gt;&lt;/a&gt;&lt;p&gt;
Details see: &lt;a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&amp;utm_medium=description_link&amp;utm_campaign=eisos_eagle"&gt;www.we-online.com/en/components/products/WE-AGDT&lt;/a&gt;&lt;p&gt;

Updated by Ella 2025-05-13&lt;br&gt;
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="750319497"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="2" pad="2"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="4" pad="4"/>
<connect gate="G$1" pin="5" pad="5"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="7" pad="7"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="7.5pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319497?ae"/>
<attribute name="FSWITCH" value="350kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="7uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="2.25:4.25:1"/>
<attribute name="PART-NUMBER" value="750319497"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="9 - 18Vin, 19Vout"/>
<attribute name="VERSION" value="Flyback"/>
<attribute name="VIN" value="9 - 18V"/>
<attribute name="VOUT1" value="19V"/>
<attribute name="WIDTH" value="10.95mm"/>
<attribute name="PO" value="6W"/>
<attribute name="ISAT" value="4.5A"/>
<attribute name="VOUT2" value="4V"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750317893" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

Updated by Ella 2025-05-13
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="750317893"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="2" pad="2"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="4" pad="4"/>
<connect gate="G$1" pin="5" pad="5"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="6.8pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750317893?ae"/>
<attribute name="FSWITCH" value="350kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="18uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="1:2"/>
<attribute name="PART-NUMBER" value="750317893"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="9 - 18Vin, 19Vout"/>
<attribute name="VERSION" value="Flyback"/>
<attribute name="VIN" value="9 - 18V"/>
<attribute name="VOUT1" value="19V"/>
<attribute name="WIDTH" value="10.95mm"/>
<attribute name="PO" value="3W"/>
<attribute name="ISAT" value="1.95A"/>
<attribute name="V" value="9-18V"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319077" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

Updated by Ella 2025-05-13
2025 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="750319077"/>
</gates>
<devices>
<device name="" package="WE-AGDT_EP7">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="2" pad="2"/>
<connect gate="G$1" pin="3" pad="3"/>
<connect gate="G$1" pin="4" pad="4"/>
<connect gate="G$1" pin="5" pad="5"/>
<connect gate="G$1" pin="6" pad="6"/>
<connect gate="G$1" pin="7" pad="7"/>
<connect gate="G$1" pin="8" pad="8"/>
</connects>
<technologies>
<technology name="">
<attribute name="CWW" value="7.8pF"/>
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319077?ae"/>
<attribute name="FSWITCH" value="150kHz"/>
<attribute name="HEIGHT" value="11.94mm"/>
<attribute name="L" value="42uH"/>
<attribute name="LENGTH" value="11.3mm"/>
<attribute name="MOUNT" value="SMT"/>
<attribute name="N" value="2:2.86:1.43:1.43:1"/>
<attribute name="PART-NUMBER" value="750319077"/>
<attribute name="SIZE" value="EP7"/>
<attribute name="VALUE" value="12 - 18Vin, 15Vout"/>
<attribute name="VERSION" value="Flyback"/>
<attribute name="VIN" value="12 - 18V"/>
<attribute name="VOUT1" value="15V"/>
<attribute name="WIDTH" value="10.95mm"/>
<attribute name="PO" value="1.5W"/>
<attribute name="ISAT" value="1.25A"/>
<attribute name="VOUT2" value="7.5V"/>
<attribute name="VAUX" value="5V"/>
<attribute name="VOUT3" value="7.5V"/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319376" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="WE-AGDT_2015"/>
</gates>
<devices>
<device name="" package="WE-AGDT_2015">
<connects>
<connect gate="G$1" pin="P1" pad="2"/>
<connect gate="G$1" pin="P2" pad="5"/>
<connect gate="G$1" pin="S1" pad="8"/>
<connect gate="G$1" pin="S2" pad="7"/>
<connect gate="G$1" pin="S3" pad="9"/>
<connect gate="G$1" pin="S4" pad="10"/>
</connects>
<technologies>
<technology name="">
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319376?ae"/>
<attribute name="PART-NUMBER" value="750319376"/>
<attribute name="SIZE" value=" 2015 "/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319377" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="WE-AGDT_2015-1"/>
</gates>
<devices>
<device name="" package="WE-AGDT_2015">
<connects>
<connect gate="G$1" pin="P1" pad="2"/>
<connect gate="G$1" pin="P2" pad="5"/>
<connect gate="G$1" pin="S1" pad="8"/>
<connect gate="G$1" pin="S2" pad="7"/>
<connect gate="G$1" pin="S3" pad="9"/>
<connect gate="G$1" pin="S4" pad="10"/>
</connects>
<technologies>
<technology name="">
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319377?ae"/>
<attribute name="PART-NUMBER" value="750319377"/>
<attribute name="SIZE" value=" 2015 "/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319917" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="WE-AGDT_2015-2"/>
</gates>
<devices>
<device name="" package="WE-AGDT_2015">
<connects>
<connect gate="G$1" pin="P1" pad="2"/>
<connect gate="G$1" pin="P2" pad="5"/>
<connect gate="G$1" pin="S1" pad="8"/>
<connect gate="G$1" pin="S2" pad="7"/>
<connect gate="G$1" pin="S3" pad="9"/>
<connect gate="G$1" pin="S4" pad="10"/>
</connects>
<technologies>
<technology name="">
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319917?ae"/>
<attribute name="PART-NUMBER" value="750319917"/>
<attribute name="SIZE" value=" 2015 "/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750320925" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="WE-AGDT_2015-3"/>
</gates>
<devices>
<device name="" package="WE-AGDT_2015">
<connects>
<connect gate="G$1" pin="P1" pad="5"/>
<connect gate="G$1" pin="P2" pad="2"/>
<connect gate="G$1" pin="S1" pad="7"/>
<connect gate="G$1" pin="S2" pad="8"/>
<connect gate="G$1" pin="S3" pad="10"/>
<connect gate="G$1" pin="S4" pad="9"/>
</connects>
<technologies>
<technology name="">
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750320925?ae"/>
<attribute name="PART-NUMBER" value="750320925"/>
<attribute name="SIZE" value=" 2015 "/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319375" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="WE-AGDT_2015-4"/>
</gates>
<devices>
<device name="" package="WE-AGDT_2015">
<connects>
<connect gate="G$1" pin="P1" pad="2"/>
<connect gate="G$1" pin="P2" pad="5"/>
<connect gate="G$1" pin="S1" pad="8"/>
<connect gate="G$1" pin="S2" pad="7"/>
<connect gate="G$1" pin="S3" pad="9"/>
<connect gate="G$1" pin="S4" pad="10"/>
</connects>
<technologies>
<technology name="">
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319375?ae"/>
<attribute name="PART-NUMBER" value="750319375"/>
<attribute name="SIZE" value=" 2015 "/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750319374" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="WE-AGDT_2015-5"/>
</gates>
<devices>
<device name="" package="WE-AGDT_2015">
<connects>
<connect gate="G$1" pin="P1" pad="2"/>
<connect gate="G$1" pin="P2" pad="5"/>
<connect gate="G$1" pin="S1" pad="8"/>
<connect gate="G$1" pin="S2" pad="7"/>
<connect gate="G$1" pin="S3" pad="9"/>
<connect gate="G$1" pin="S4" pad="10"/>
</connects>
<technologies>
<technology name="">
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750319374?ae"/>
<attribute name="PART-NUMBER" value="750319374"/>
<attribute name="SIZE" value=" 2015 "/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750320012" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="WE-AGDT_2015-6"/>
</gates>
<devices>
<device name="" package="WE-AGDT_2015">
<connects>
<connect gate="G$1" pin="P1" pad="2"/>
<connect gate="G$1" pin="P2" pad="4"/>
<connect gate="G$1" pin="S1" pad="8"/>
<connect gate="G$1" pin="S2" pad="7"/>
<connect gate="G$1" pin="S3" pad="9"/>
<connect gate="G$1" pin="S4" pad="10"/>
</connects>
<technologies>
<technology name="">
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750320012?ae"/>
<attribute name="PART-NUMBER" value="750320012"/>
<attribute name="SIZE" value=" 2015 "/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750318016" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="WE-AGDT_2015-7"/>
</gates>
<devices>
<device name="" package="WE-AGDT_2015">
<connects>
<connect gate="G$1" pin="P1" pad="2"/>
<connect gate="G$1" pin="P2" pad="5"/>
<connect gate="G$1" pin="S1" pad="8"/>
<connect gate="G$1" pin="S2" pad="7"/>
<connect gate="G$1" pin="S3" pad="9"/>
<connect gate="G$1" pin="S4" pad="10"/>
</connects>
<technologies>
<technology name="">
<attribute name="DATASHEET-URL" value="https://www.we-online.com/redexpert/spec/750318016?ae"/>
<attribute name="PART-NUMBER" value="750318016"/>
<attribute name="SIZE" value=" 2015 "/>
</technology>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="750317493" prefix="T">
<description>WE-AGDT Auxiliary Gate Drive Transformer 
for SiC-MOSFET and IGBT 

Characteristics 

Interwinding capacitance down to Tiny surface mount EP7 package 
Dielectric insulation up to 4 kV AC 
Basic insulation for 568 Vrms / 800 Vpk 
Safety: IEC62368-1 / IEC61558-2-16 
AEC-Q200 qualification 
Operating temperature: -40 °C up to +130 °C 
Common control voltages for SiC MOSFET’s 
High Common-mode Transient Immunity (CMTI) 
Flyback, LLC, Half-Bridge topologies 
Up to 6 W output power 
Wide range input voltages 6 V to 36 V 
Different unipolar and bipolar voltages 
High efficiency and very compact solution 
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi 

Applications 

Industrial drives 
AC motor inverters 
HEV/EV charging station 
Battery chargers 
Solar inverters 
Data centers 
Uninterruptible power supplies 
Active power factor correction 
SiC-MOSFET based power converter 

Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik</description>
<gates>
<gate name="G$1" symbol="WE-AGDT_2015-8"/>
</gates>
<devices>
<device name="" package="WE-AGDT_2015">
<connects>
<connect gate="G$1" pin="P1" pad="2"/>
<connect gate="G$1" pin="P2" pad="5"/>
<connect gate="G$1" pin="S1" pad="8"/>
<connect gate="G$1" pin="S2" pad="7"/>
<connect gate="G$1" pin="S3" pad="9"/>
<connect gate="G$1" pin="S4" pad="10"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
</devicesets>
</library>
</drawing>
</eagle>
