<BR>Wurth Elektronik - Passive Components - Power Magnetics - Transformers For DC/DC Converter - WE-AGDT<br>
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<B> More than you expect<BR><BR><BR></B>
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<b>Würth Elektronik eiSos GmbH & Co. KG</b><br>
EMC & Inductive Solutions<br>
Max-Eyth-Str.1<br>
D-74638 Waldenburg<br>
<br>
Tel: +49 (0)7942-945-0<br>
Fax:+49 (0)7942-945-5000<br>
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<a href="http://www.we-online.com/web/en/electronic_components/produkte_pb/bauteilebibliotheken/eagle_4.php">www.we-online.com/eagle</a><br>
<a href="mailto:libraries@we-online.com">libraries@we-online.com</a> <BR><BR>
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Disclaimer: While Würth Elektronik eiSos has made every reasonable effort to ensure the accuracy of the PCB layout models provided, <br>
Würth Elektronik eiSos does not guarantee the exemption of error on the PCB layout models, nor does Würth Elektronik eiSos guarantee that the PCB layout model is current. <br>
Würth Elektronik eiSos reserves the right to make any adjustments at any time without notice. <br>
Würth Elektronik eiSos expressly disclaims all implied warranties regarding this PCB layout model. <br>
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Please contact us for more information.<br>
<HR>
<br>Eagle Version 9, Library Revision 2025a, 2025-05-13<br>
<HR>
Copyright: Würth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
Size: EP7,SMT,8Pins
L X W X H= 11.3mm X 10.95mm X 11.94mm
>NAME
>VALUE
WE-AGDT Auxiliary Gate Drive Transformer
Size: 2015,SMT,8Pins
>NAME
>VALUE
<B>WE-AGDT Auxiliary Gate Drive Transformer
<BR><BR></B>Size: EP7,SMT,8Pins
<br>L X W X H= 11.3mm X 10.95mm X 11.94mm
N1
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>NAME
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>NAME
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>NAME
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>NAME
N1
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>NAME
N1
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>NAME
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>VALUE
>NAME
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N2
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>NAME
N1
N2
N3
>VALUE
>NAME
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to <1 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback, LLC, Half-Bridge topologies
<br>Up to 6 W output power
<br>Wide range input voltages 6 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/en/components/products/WE-AGDT</a><p>
Updated by Ella 2025-05-13<br>
2025 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to <1 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback, LLC, Half-Bridge topologies
<br>Up to 6 W output power
<br>Wide range input voltages 6 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/en/components/products/WE-AGDT</a><p>
Updated by Ella 2025-05-13<br>
2025 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to <1 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback, LLC, Half-Bridge topologies
<br>Up to 6 W output power
<br>Wide range input voltages 6 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/en/components/products/WE-AGDT</a><p>
Updated by Ella 2025-05-13<br>
2025 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to <1 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback, LLC, Half-Bridge topologies
<br>Up to 6 W output power
<br>Wide range input voltages 6 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/en/components/products/WE-AGDT</a><p>
Updated by Ella 2025-05-13<br>
2025 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to <1 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback, LLC, Half-Bridge topologies
<br>Up to 6 W output power
<br>Wide range input voltages 6 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/en/components/products/WE-AGDT</a><p>
Updated by Ella 2025-05-13<br>
2025 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to <1 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback, LLC, Half-Bridge topologies
<br>Up to 6 W output power
<br>Wide range input voltages 6 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/en/components/products/WE-AGDT</a><p>
Updated by Ella 2025-05-13<br>
2025 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to <1 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback, LLC, Half-Bridge topologies
<br>Up to 6 W output power
<br>Wide range input voltages 6 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/en/components/products/WE-AGDT</a><p>
Updated by Ella 2025-05-13<br>
2025 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter
Updated by Ella 2025-05-13
2025 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to <1 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback, LLC, Half-Bridge topologies
<br>Up to 6 W output power
<br>Wide range input voltages 6 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/en/components/products/WE-AGDT</a><p>
Updated by Ella 2025-05-13<br>
2025 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to <1 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback, LLC, Half-Bridge topologies
<br>Up to 6 W output power
<br>Wide range input voltages 6 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/en/components/products/WE-AGDT</a><p>
Updated by Ella 2025-05-13<br>
2025 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to <1 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback, LLC, Half-Bridge topologies
<br>Up to 6 W output power
<br>Wide range input voltages 6 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/en/components/products/WE-AGDT</a><p>
Updated by Ella 2025-05-13<br>
2025 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter
Updated by Ella 2025-05-13
2025 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter
Updated by Ella 2025-05-13
2025 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to <1 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback, LLC, Half-Bridge topologies
<br>Up to 6 W output power
<br>Wide range input voltages 6 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/en/components/products/WE-AGDT</a><p>
Updated by Ella 2025-05-13<br>
2025 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter
Updated by Ella 2025-05-13
2025 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter
Updated by Ella 2025-05-13
2025 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter

Updated by Ella 2025-05-13
2025 (C) Wurth Elektronik
<b> WE-AGDT Auxiliary Gate Drive Transformer
<br></b>for SiC-MOSFET and IGBT
<br>
<br><b> Characteristics
<br>
<br> </b></b>Interwinding capacitance down to <1 pF
<br>Tiny surface mount EP7 package
<br>Dielectric insulation up to 4 kV AC
<br>Basic insulation for 568 Vrms / 800 Vpk
<br>Safety: IEC62368-1 / IEC61558-2-16
<br>AEC-Q200 qualification
<br>Operating temperature: -40 °C up to +130 °C
<br>Common control voltages for SiC MOSFET’s
<br>High Common-mode Transient Immunity (CMTI)
<br>Flyback, LLC, Half-Bridge topologies
<br>Up to 6 W output power
<br>Wide range input voltages 6 V to 36 V
<br>Different unipolar and bipolar voltages
<br>High efficiency and very compact solution
<br>Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
<br>
<br><b> Applications
<br>
<br></b>Industrial drives
<br>AC motor inverters
<br>HEV/EV charging station
<br>Battery chargers
<br>Solar inverters
<br>Data centers
<br>Uninterruptible power supplies
<br>Active power factor correction
<br>SiC-MOSFET based power converter
<br>
<br>
<br><a href="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" title="Enlarge picture">
<img src="https://www.we-online.com/components/media/o179549v209%2075031xxxx_group.jpg" width="320"></a><p>
Details see: <a href="www.we-online.com/catalog/WE-AGDT/?utm_source=eagle_model&utm_medium=description_link&utm_campaign=eisos_eagle">www.we-online.com/en/components/products/WE-AGDT</a><p>
Updated by Ella 2025-05-13<br>
2025 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter
Updated by Ella 2025-05-13
2025 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter
Updated by Ella 2025-05-13
2025 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter
Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter
Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter
Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter
Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter
Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter
Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter
Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter
Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik
WE-AGDT Auxiliary Gate Drive Transformer
for SiC-MOSFET and IGBT
Characteristics
Interwinding capacitance down to Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different unipolar and bipolar voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi
Applications
Industrial drives
AC motor inverters
HEV/EV charging station
Battery chargers
Solar inverters
Data centers
Uninterruptible power supplies
Active power factor correction
SiC-MOSFET based power converter
Updated by Ella 2026-06-18
2026 (C) Wurth Elektronik
Since Version 8.3, EAGLE supports URNs for individual library
assets (packages, symbols, and devices). The URNs of those assets
will not be understood (or retained) with this version.
Since Version 8.3, EAGLE supports the association of 3D packages
with devices in libraries, schematics, and board files. Those 3D
packages will not be understood (or retained) with this version.