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Diodes Incorporated AL8866Q | Demoboard AL8866QEV1
AL8866QEV1 User Guide Boost, Buck-Boost 1A LED Driver
Details
| Topologie | Abwärts- und Aufwärtswandler |
| Eingangsspannung | 9-16 V |
| Ausgang 1 | 1 A |
| IC-Revision | 00 |
Typische Anwendungen
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | fres(MHz) | Montageart | Tol. L | IR(A) | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(mΩ) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCIA SMT-Flachdraht-Hochstrominduktivität, 3.3 µH, 16.6 A | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCIA SMT-Flachdraht-Hochstrominduktivität | Induktivität3.3 µH | Performance Nennstrom16.6 A | – | Sättigungsstrom @ 30%18 A | Eigenresonanzfrequenz41 MHz | – | Induktivität±20% | Nennstrom12 A | – | – | – | – | Gleichstromwiderstand5.75 mΩ | – | |||
 | WE-LHMI SMT Speicherdrossel, 10 µH, 11.8 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | Induktivität10 µH | Performance Nennstrom11.8 A | Sättigungsstrom 113.2 A | Sättigungsstrom @ 30%23.9 A | Eigenresonanzfrequenz8 MHz | MontageartSMT | Induktivität±20% | – | – | – | – | – | Gleichstromwiderstand16.5 mΩ | – | ||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | – | – | MontageartSMT | – | Nennstrom2 A | Impedanz @ 100 MHz80 Ω | Maximale Impedanz110 Ω | Maximale Impedanz2000 MHz | Nennstrom 23000 mA | Gleichstromwiderstand30 mΩ | TypHochstrom |