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Analog Devices LTC7103-1
105V, 2.3A Low EMI Synchronous Step-Down Regulator with Fast Current Programming
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 4.4-105 V |
| Schaltfrequenz | 200-2000 kHz |
| Ausgang 1 | 2.3 A |
Beschreibung
The LTC7103-1 is a high efficiency, monolithic synchro-nous step-down DC/DC converter utilizing a constant frequency, average current mode control architecture. It operates from an input voltage range of 4.4V to 105V and provides an adjustable regulated output voltage from 1V to VIN while delivering up to 2.3A of output current.
Eigenschaften
- Wide VIN Range: 4.4V to 105V (110V Abs Max)
- Ultralow EMI/EMC Emissions: CISPR 25 Compliant
- 2μA IQ When Regulating 48VIN to 3.3VOUT
- Fast and Accurate Output Current Programming and Monitoring with No External RSENSE
- Brick Wall Current Limit
- Low Minimum On-Time: 40ns
- Wide VOUT Range: 1V to VIN
- PassThru™/100% Duty Cycle Capable
- Programmable Fixed Frequency: 200kHz to 2MHz
- Eight, Pin-Selectable Fixed (1.2V to 15V) or Adjustable Output Voltages
- Selectable Continuous, Pulse-Skipping, or Low Ripple Burst Mode® Operation at Light Loads
- PLL Synchronization to External Clock
- EXTVCC LDO Powers Chip from VOUT = 3.3V to 40V
- OPTI-LOOP® or Fixed Internal Compensation
- Input and Output Overvoltage Protection
- Thermally Enhanced (5mm × 6mm) QFN Package
- AEC-Q100 Qualification in Process
Typische Anwendungen
- Medical Instruments and Telecommunication
- Automotive and Military Systems
- Industrial, Avionics and Heavy Equipment
- Battery Chargers and CC/CV Supplies
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT(A) | RDC max.(mΩ) | fres(MHz) | Bauform | Version | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | Material | IR,40K(A) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-PD SMT-Speicherdrossel, 12 µH, 7.4 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität12 µH | Performance Nennstrom7.4 A | Sättigungsstrom4.9 A | Gleichstromwiderstand26 mΩ | Eigenresonanzfrequenz19.7 MHz | Bauform1260 | VersionGestanzt | Sättigungsstrom 14.9 A | Sättigungsstrom @ 30%6.4 A | – | – | Nennstrom4.5 A | ||||
 | WE-HCI SMT-Hochstrominduktivität, 18 µH, 7.4 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität18 µH | Performance Nennstrom7.4 A | – | Gleichstromwiderstand24200 mΩ | Eigenresonanzfrequenz16 MHz | Bauform1365 | VersionSMT | Sättigungsstrom 13.5 A | Sättigungsstrom @ 30%7.5 A | Gleichstromwiderstand22 mΩ | MaterialWE-PERM | – | ||||
| WE-PD SMT-Speicherdrossel, 33 µH, 3.65 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität33 µH | Performance Nennstrom3.65 A | Sättigungsstrom2.5 A | Gleichstromwiderstand85 mΩ | Eigenresonanzfrequenz13 MHz | Bauform1245 | VersionGestanzt | Sättigungsstrom 12.5 A | Sättigungsstrom @ 30%3 A | – | – | Nennstrom2.3 A | ||||
| WE-PD Speicherdrossel, 47 µH, 4.9 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD Speicherdrossel | Induktivität47 µH | Performance Nennstrom4.9 A | – | Gleichstromwiderstand60 mΩ | Eigenresonanzfrequenz6.5 MHz | Bauform1210 | VersionGestanzt | Sättigungsstrom 14.5 A | Sättigungsstrom @ 30%5.5 A | – | – | Nennstrom3.8 A |