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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 4.5-150 V |
| Schaltfrequenz | 50-850 kHz |
| Ausgang 1 | 60 V |
Beschreibung
The LTC®3894 is a high voltage step-down DC/DC switching regulator controller. It drives a P-channel power MOSFET switch allowing 100% duty cycle operation. It enables a low part count, simple, and robust solution for high reliability, high voltage applications. The LTC3894 operates over a wide input voltage range from 4.5V to 150V and can regulate output voltages from 0.8V to 60V. It offers excellent light load efficiency, drawing only 9μA quiescent current while regulating the output voltage with no load. Its peak current mode, constant frequency architecture provides for good control of switching frequency and output current limit. The switching frequency can be programmed from 50kHz to 850kHz with an external resistor and can be synchronized to an external clock from 75kHz to 800kHz. The LTC3894 offers programmable output voltage softstart or tracking. Safety features include overvoltage, overcurrent and overtemperature protection with a power good output monitor with adjustable threshold. The LTC3894 is available in a thermally enhanced 20-Pin TSSOP package with leads removed to accommodate high voltage creepage and clearance requirements.
Eigenschaften
- Wide Operating VIN Range: 4.5V to 150V
- Wide VOUT Range: 0.8V to 60V
- 9μA IQ when Regulating 48VIN to 3.3VOUT
- 16μA IQ when Regulating 12VIN to 3.3VOUT
- Very Low Dropout Operation: 100% Duty Cycle
- Adjustable Input Overvoltage Lockout
- Programmable PGOOD Undervoltage Monitor
- RSENSE or Inductor DCR Current Sensing
- Selectable High Efficiency Burst Mode® Operation or Pulse-Skipping Mode at Light Loads
- Programmable Fixed Frequency: 50kHz to 850kHz
- Phase-Lockable Frequency: 75kHz to 800kHz
- Internal Fixed Soft-Start and External Programmable Soft-Start or Voltage Tracking
- Strong MOSFET Gate Driver with Selectable Undervoltage Lockout Thresholds
- Optional External NMOS for Gate Driver Bias in High Power Applications
Typische Anwendungen
- Automotive and Industrial Power Systems
- Telecommunication Power Systems, Distributed Power Systems
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT(A) | RDC max.(mΩ) | fres(MHz) | Bauform | Version | ISAT,10%(A) | ISAT,30%(A) | IR,40K(A) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-PD SMT-Speicherdrossel, 15 µH, 7 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität15 µH | Performance Nennstrom7 A | Sättigungsstrom4.5 A | Gleichstromwiderstand28 mΩ | Eigenresonanzfrequenz16.6 MHz | Bauform1260 | VersionGestanzt | Sättigungsstrom 14.5 A | Sättigungsstrom @ 30%5.8 A | Nennstrom4.2 A | ||||
| WE-PD Speicherdrossel, 22 µH, 7 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD Speicherdrossel | Induktivität22 µH | Performance Nennstrom7 A | – | Gleichstromwiderstand28 mΩ | Eigenresonanzfrequenz10 MHz | Bauform1210 | VersionGestanzt | Sättigungsstrom 16.5 A | Sättigungsstrom @ 30%8 A | Nennstrom5.3 A | ||||
| WE-PD SMT-Speicherdrossel, 39 µH, 5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität39 µH | Performance Nennstrom5 A | – | Gleichstromwiderstand56 mΩ | Eigenresonanzfrequenz6 MHz | Bauform1210 | VersionGestanzt | Sättigungsstrom 15 A | Sättigungsstrom @ 30%6.2 A | Nennstrom4.1 A | ||||
| WE-PD SMT-Speicherdrossel, 68 µH, 3.9 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität68 µH | Performance Nennstrom3.9 A | – | Gleichstromwiderstand89 mΩ | Eigenresonanzfrequenz5.5 MHz | Bauform1210 | VersionGestanzt | Sättigungsstrom 13.6 A | Sättigungsstrom @ 30%4.4 A | Nennstrom3.2 A |