IC-Hersteller Analog Devices
IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (337)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (97)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (58)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Analog Devices LT8650S | Demoboard DC2407A
Dual Channel 42V, 4A Synchronous Step-Down Silent Switcher with 6.2μA Quiescent Current
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 5.4-42 V |
| Schaltfrequenz | 1850-2150 kHz |
| Ausgang 1 | 5.2 V / 4 A |
| Ausgang 2 | 3.43 V / 4 A |
| IC-Revision | 1 |
Beschreibung
The LT8650S is a dual step-down regulator that delivers up to 4A of continuous current from both channels and supports loads up to 6A from each channel. The LT8650S features the second generation Silent Switcher architecture to minimize EMI emissions while delivering high efficiency at high switching frequencies. This includes integration of bypass capacitors to optimize high frequency current loops and make it easy to achieve advertised EMI performance by eliminating layout sensitivity.The fast, clean, low-overshoot switching edges enable high efficiency operation even at high switching frequencies, leading to a small overall solution size. Peak current mode control with a 40ns minimum on-time allows high step down ratios at high switching frequencies.Burst Mode operation features a 6.2μA quiescent current resulting in high efficiency at low output currents, forced continuous mode allows fixed switching frequency operation over the entire output load range, and spread spectrum operation can further reduce EMI emissions. External VC pins allow optimal loop compensation for fast transient response. The VC pins can also be used for current sharing and the CLKOUT pin enables synchronizing two LT8650S chips to generate a 4-phase, 16A supply.
Eigenschaften
Silent Switcher®2 Architecture:
- Ultralow EMI on Any PCB
- Eliminates PCB Layout Sensitivity
- Internal Bypass Capacitors Reduce Radiated EMI
- Optional Spread Spectrum Modulation
- 4A DC from Each Channel Simultaneously
- Up to 6A on Either Channel
- Ultralow Quiescent Current Burst Mode® Operation:
- 6.2μA IQ Regulating 12VIN to 5VOUT1 and 3.3VOUT2
- Output Ripple <10mVP-P
- Forced Continuous Mode
- Optional External VC Pin: Fast Transient Response and Current Sharing (Extra 50µA IQ/Channel)
- High Efficiency at High Frequency
- 94.6% Efficiency at 2A, 5VOUT from 12VIN at 2MHz
- 93.3% Efficiency at 4A, 5VOUT from 12VIN at 2MHz
- Fast Minimum Switch-On Time: 40ns
- Wide Input Voltage Range: 3.0V to 42V
- Adjustable and Synchronizable: 300kHz to 3MHz
- Small 4mm × 6mm 32-Pin LQFN Package
- AEC-Q100 Qualified for Automotive Applications
Typische Anwendungen
- Automotive and Industrial Supplies
- General Purpose Step-Down
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | f(mm) | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | fres(MHz) | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR(mA) | Z @ 1 GHz(Ω) | H(mm) | Typ | Pins | Montageart | L(mm) | Arbeitsspannung(V (AC)) | Betriebstemperatur | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | – | – | Gleichstromwiderstand6 mΩ | – | Impedanz @ 100 MHz100 Ω | Maximale Impedanz160 Ω | Maximale Impedanz1100 MHz | Nennstrom8000 mA | Impedanz @ 1 GHz150 Ω | Höhe2.3 mm | TypHochstrom | – | MontageartSMT | Länge4.5 mm | – | Betriebstemperatur -55 °C up to +125 °C | ||||
 | WE-LHMI SMT Speicherdrossel, –, 0.22 µH | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | – | Induktivität0.22 µH | Performance Nennstrom11.4 A | Sättigungsstrom 110.8 A | Sättigungsstrom @ 30%22.3 A | Gleichstromwiderstand7.3 mΩ | Eigenresonanzfrequenz195 MHz | – | – | – | – | – | Höhe1.8 mm | – | Pins2 | MontageartSMT | Länge4.45 mm | – | Betriebstemperatur -40 °C up to +125 °C | ||||
 | WA-SNSR Self-Retaining Spacer, 4.8 mm, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWA-SNSR Self-Retaining Spacer | Bohrung in Blende4.8 mm | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Länge11.1 mm | – | Betriebstemperatur -30 °C up to +85 °C | |||
 | WR-PHD Kurzschlussbrücken, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Kurzschlussbrücken | – | – | – | – | – | – | – | – | – | – | Nennstrom3000 mA | – | – | – | Pins2 | – | – | Arbeitsspannung200 V (AC) | Betriebstemperatur -25 °C up to +105 °C | |||
 | WR-PHD Stiftleisten, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten | – | – | – | – | – | – | – | – | – | – | Nennstrom2000 mA | – | – | TypGerade | Pins3 | MontageartTHT | Länge6 mm | Arbeitsspannung200 V (AC) | Betriebstemperatur -40 °C up to +105 °C | |||
 | WR-PHD Stiftleisten, –, – | Simulation– | Downloads7 Dateien | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten | – | – | – | – | – | – | – | – | – | – | Nennstrom2000 mA | – | – | TypGerade | Pins6 | MontageartTHT | Länge6 mm | Arbeitsspannung200 V (AC) | Betriebstemperatur -40 °C up to +105 °C |