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Details
| Topologie | Aufwärtswandler |
| Eingangsspannung | 2.5-4.5 V |
| Ausgang 1 | 6 V / 5 A |
Beschreibung
The EVAL-LT8349-BZ evaluation board provides a proven design to evaluate the LT8349, 2-Phase low IQ, synchronous boost converter. The application circuit is configured to demonstrate optimum performance and component size. Using the board layout example, optimized for conducted, radiated EMI, and thermal performance, will help ensure the designer sees similar performance in their system.The evaluation board is configured to run at 2MHz per phase with a 6V output voltage from an input voltage range of 2.5V to 4.5V and deliver up to 5A load current when VIN is 4.5V.
Eigenschaften
- Input Voltage Range: 2.5V to 4.5V
- 6V Output Voltage
- Up to 5A Load Current at 4.5V input voltage
- 2MHz (per phase) Switching Frequency
- High 97.1% Efficiency (VIN = 4.5V, IOUT = 1A)
- Enable/UVLO Input, Resistor-Programmable UVLO Threshold
- Selectable Mode of operation
- Selectable Burst Mode Peak Current (IPK_BURST) levels for optimization of performance
- External Frequency Synchronization
- External Compensation
- Overtemperature Protection
- Proven Printed Circuit Board (PCB) Layout
- Fully Assembled and Tested
- Complies with CISPR32 (EN55032) Class B Conducted and Radiated Emissions
Typische Anwendungen
- Handheld and Industrial Power Supplies
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | fres(MHz) | VOP(V) | Montageart | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR(A) | Z @ 1 GHz(Ω) | H(mm) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-MAPI SMT-Speicherdrossel, 0.47 µH, 7.55 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität0.47 µH | Performance Nennstrom7.55 A | Sättigungsstrom @ 30%9.8 A | Gleichstromwiderstand18 mΩ | Eigenresonanzfrequenz99 MHz | Betriebsspannung80 V | MontageartSMT | – | – | – | Nennstrom4.8 A | – | Höhe2 mm | – | ||||
 | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | Gleichstromwiderstand4.5 mΩ | – | – | MontageartSMT | Impedanz @ 100 MHz100 Ω | Maximale Impedanz160 Ω | Maximale Impedanz1100 MHz | Nennstrom8 A | Impedanz @ 1 GHz150 Ω | Höhe2.3 mm | TypHochstrom |