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WE-EHPI Energy Harvesting Coupled Inductor
WE-EHPI Energy Harvesting Coupled Inductor
IR 1.5 to 1.9 A IR 1.5 to 1.9 A RDC1 max 0.095 to 0.24 Ω
WE-TDC SMT Shielded Coupled Inductor
WE-TDC SMT Shielded Coupled Inductor
IR 0.7 to 4.5 A RDC1 max 14.5 to 480 mΩ RDC2 max 14.5 to 480 mΩ
WE-DD SMT Shielded Coupled Inductor
WE-DD SMT Shielded Coupled Inductor
IR 0.3 to 8.6 A RDC1 max 0.015 Ω to 2320 mΩ RDC2 max 0.015 Ω to 2320 mΩ
WE-DCT Toroidal Double Power Choke
WE-DCT Toroidal Double Power Choke
IR 1.1 to 14.5 A RDC1 max 3.5 to 290 mΩ RDC2 max 3.5 to 290 mΩ
WE-CFWI Coupled Flatwire Inductor
WE-CFWI Coupled Flatwire Inductor
IR 11.5 to 28 A RDC 1 1.6 to 13.9 mΩ RDC 2 1.6 to 13.9 mΩ
WE-DPC SMT Dual Powerchoke
WE-DPC SMT Dual Powerchoke
IR 0.9 to 4.5 A RDC1 max 35 to 350 mΩ RDC2 max 35 to 350 mΩ
WE-DPC HV SMT Dual Powerchoke
WE-DPC HV SMT Dual Powerchoke
IR 2.5 A RDC1 max 72 mΩ RDC2 max 72 mΩ
WE-MCRI SMT Molded Coupled Inductor
WE-MCRI SMT Molded Coupled Inductor
IR 1.5 to 17 A RDC1 max 5.6 to 340 mΩ RDC2 max 5.6 to 340 mΩ
WE-MTCI SMT Multi-Turn Ratio coupled Inductor
WE-MTCI SMT Multi-Turn Ratio coupled Inductor
IR 0.45 to 0.95 A RDC1 max 500 to 1900 mΩ RDC2 max 600 to 5200 mΩ
WE-TDC HV SMT Coupled Inductor
WE-TDC HV SMT Coupled Inductor
IR 0.75 to 2.45 A RDC1 max 110 to 780 mΩ RDC2 max 110 to 780 mΩ
EXT.
WE-HCMD High Current Inductor for TLVR Applications
WE-HCMD High Current Inductor for TLVR Applications EXTENDED
Shielded L1 70 to 200 nH IRP,1 78 A
Order Code
Data­sheet
Simu­lation
Downloads
Status
L1 (nH)
L2 (nH)
n
IR (A)
IR (A)
IR 2 (A)
ISAT (A)
ISAT1 (A)
ISAT2 (A)
RDC1 typ (mΩ)
RDC2 typ (mΩ)
RDC1 max (mΩ)
RDC2 max (mΩ)
RDC 1 (mΩ)
RDC 2 (mΩ)
fres 1 (MHz)
Product series
Design Kit
Samples
WE-HCMD High Current Inductor for TLVR Applications 70 nH, 70 nH, –
Simu­lation
Status New i | Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1 70 nH
Inductance 2 70 nH
DC Resistance 1 0.125 mΩ
DC Resistance 2 0.37 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 70 nH, 70 nH, –
Simu­lation
Status New i | Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1 70 nH
Inductance 2 70 nH
DC Resistance 1 0.125 mΩ
DC Resistance 2 0.33 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 91 nH, 91 nH, –
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 91 nH
Inductance 2 91 nH
Rated Current 14.5 A
Rated Current 2 14.5 A
Saturation Current 120 A
DC Resistance 1 2.8 mΩ
DC Resistance 2 2.8 mΩ
DC Resistance 1 3.5 mΩ
DC Resistance 2 3.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 100 nH, 100 nH, –
Simu­lation
Status New i | Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1 100 nH
Inductance 2 100 nH
DC Resistance 1 0.125 mΩ
DC Resistance 2 0.33 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 105 nH, 105 nH, –
Simu­lation
Status New i | Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1 105 nH
Inductance 2 105 nH
DC Resistance 1 0.125 mΩ
DC Resistance 2 0.37 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 120 nH, 120 nH, –
Simu­lation
Status New i | Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1 120 nH
Inductance 2 120 nH
DC Resistance 1 0.125 mΩ
DC Resistance 2 0.33 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 120 nH, 120 nH, –
Simu­lation
Status New i | Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1 120 nH
Inductance 2 120 nH
DC Resistance 1 0.125 mΩ
DC Resistance 2 0.37 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 150 nH, 150 nH, –
Simu­lation
Status New i | Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1 150 nH
Inductance 2 150 nH
DC Resistance 1 0.125 mΩ
DC Resistance 2 0.33 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 150 nH, 150 nH, –
Simu­lation
Status New i | Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1 150 nH
Inductance 2 150 nH
DC Resistance 1 0.125 mΩ
DC Resistance 2 0.37 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 160 nH, 160 nH, –
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 160 nH
Inductance 2 160 nH
Rated Current 13.8 A
Rated Current 2 13.8 A
Saturation Current 90 A
DC Resistance 1 3.4 mΩ
DC Resistance 2 3.4 mΩ
DC Resistance 1 4.4 mΩ
DC Resistance 2 4.4 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 180 nH, 180 nH, –
Simu­lation
Status New i | Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1 180 nH
Inductance 2 180 nH
DC Resistance 1 0.125 mΩ
DC Resistance 2 0.37 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 200 nH, 200 nH, –
Simu­lation
Status New i | Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1 200 nH
Inductance 2 200 nH
DC Resistance 1 0.125 mΩ
DC Resistance 2 0.37 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 270 nH, 270 nH, –
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 270 nH
Inductance 2 270 nH
Rated Current 12.3 A
Rated Current 2 12.3 A
Saturation Current 65 A
DC Resistance 1 4 mΩ
DC Resistance 2 4 mΩ
DC Resistance 1 5 mΩ
DC Resistance 2 5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 330 nH, 330 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 330 nH
Inductance 2 330 nH
Turns Ratio 1:1 
Rated Current 4 A
Rated Current 2 4 A
Saturation Current 9 A
Saturation Current 1 9 A
Saturation Current 2 9 A
DC Resistance 1 11.1 mΩ
DC Resistance 2 11.1 mΩ
DC Resistance 1 15 mΩ
DC Resistance 2 15 mΩ
Self Resonant Frequency [1] 280 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 390 nH, 390 nH, 1:1
Simu­lation
Status NRND i | Production is active. Product is not recommended for new design. Expected lifetime: 2-5 years.
Inductance 1 390 nH
Inductance 2 390 nH
Turns Ratio 1:1 
Rated Current 4.5 A
Rated Current 2 4.5 A
Saturation Current 14 A
Saturation Current 1 14 A
Saturation Current 2 14 A
DC Resistance 1 11.6 mΩ
DC Resistance 2 11.6 mΩ
DC Resistance 1 14.5 mΩ
DC Resistance 2 14.5 mΩ
Self Resonant Frequency [1] 210 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 390 nH, 390 nH, –
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 390 nH
Inductance 2 390 nH
Rated Current 10.6 A
Rated Current 2 10.6 A
Saturation Current 50 A
DC Resistance 1 4.7 mΩ
DC Resistance 2 4.7 mΩ
DC Resistance 1 6 mΩ
DC Resistance 2 6 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 560 nH, 560 nH, –
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 560 nH
Inductance 2 560 nH
Rated Current 9.8 A
Rated Current 2 9.8 A
Saturation Current 40 A
DC Resistance 1 5.3 mΩ
DC Resistance 2 5.3 mΩ
DC Resistance 1 6.7 mΩ
DC Resistance 2 6.7 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 680 nH, 680 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 680 nH
Inductance 2 680 nH
Turns Ratio 1:1 
Rated Current 3.3 A
Rated Current 2 3.3 A
Saturation Current 6.5 A
Saturation Current 1 6.5 A
Saturation Current 2 6.5 A
DC Resistance 1 16.3 mΩ
DC Resistance 2 16.3 mΩ
DC Resistance 1 21 mΩ
DC Resistance 2 21 mΩ
Self Resonant Frequency [1] 190 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 800 nH, 800 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 800 nH
Inductance 2 800 nH
Turns Ratio 1:1 
Rated Current 28 A
Rated Current 2 28 A
Saturation Current 1 62 A
Saturation Current 2 62 A
DC Resistance 1 1.6 mΩ
DC Resistance 2 1.6 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 820 nH, 820 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 820 nH
Inductance 2 820 nH
Turns Ratio 1:1 
Rated Current 3.7 A
Rated Current 2 3.7 A
Saturation Current 9.6 A
Saturation Current 1 9.6 A
Saturation Current 2 9.6 A
DC Resistance 1 15.9 mΩ
DC Resistance 2 15.9 mΩ
DC Resistance 1 20 mΩ
DC Resistance 2 20 mΩ
Self Resonant Frequency [1] 140 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 1000 nH, 1000 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 1000 nH
Inductance 2 1000 nH
Turns Ratio 1:1 
Rated Current 2.85 A
Rated Current 2 2.85 A
Saturation Current 5.1 A
Saturation Current 1 5.1 A
Saturation Current 2 5.1 A
DC Resistance 1 22.2 mΩ
DC Resistance 2 22.2 mΩ
DC Resistance 1 28 mΩ
DC Resistance 2 28 mΩ
Self Resonant Frequency [1] 136 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 1000 nH, 1000 nH, –
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 1000 nH
Inductance 2 1000 nH
Rated Current 8.6 A
Rated Current 2 8.6 A
Saturation Current 30 A
DC Resistance 1 7.4 mΩ
DC Resistance 2 7.4 mΩ
DC Resistance 1 8.5 mΩ
DC Resistance 2 8.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 1000 nH, 1000 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 1000 nH
Inductance 2 1000 nH
Turns Ratio 1:1 
Rated Current 4.5 A
Rated Current 2 4.5 A
Saturation Current 5 A
Saturation Current 1 5 A
DC Resistance 1 25 mΩ
DC Resistance 2 25 mΩ
DC Resistance 1 35 mΩ
DC Resistance 2 35 mΩ
Self Resonant Frequency [1] 150 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 1000 nH, 1000 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 1000 nH
Inductance 2 1000 nH
Turns Ratio 1:1 
Rated Current 17 A
Rated Current 2 17 A
Saturation Current 1 43.5 A
Saturation Current 2 43.5 A
DC Resistance 1 4.5 mΩ
DC Resistance 2 4.5 mΩ
DC Resistance 1 5.6 mΩ
DC Resistance 2 5.6 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 1000 nH, 1000 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 1000 nH
Inductance 2 1000 nH
Turns Ratio 1:1 
Rated Current 12 A
Rated Current 2 12 A
Saturation Current 1 30.2 A
Saturation Current 2 30.2 A
DC Resistance 1 6.3 mΩ
DC Resistance 2 6.3 mΩ
DC Resistance 1 7.5 mΩ
DC Resistance 2 7.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 1200 nH, 1200 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 1200 nH
Inductance 2 1200 nH
Turns Ratio 1:1 
Rated Current 3.05 A
Rated Current 2 3.05 A
Saturation Current 7.5 A
Saturation Current 1 7.5 A
Saturation Current 2 7.5 A
DC Resistance 1 20.2 mΩ
DC Resistance 2 20.2 mΩ
DC Resistance 1 26 mΩ
DC Resistance 2 26 mΩ
Self Resonant Frequency [1] 90 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 1200 nH, 1200 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 1200 nH
Inductance 2 1200 nH
Turns Ratio 1:1 
Rated Current 23 A
Rated Current 2 23 A
Saturation Current 1 47 A
Saturation Current 2 47 A
DC Resistance 1 2.4 mΩ
DC Resistance 2 2.4 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 1300 nH
Inductance 2 1300 nH
Turns Ratio 1:1 
Rated Current 4.4 A
Rated Current 2 4.4 A
Saturation Current 6.3 A
DC Resistance 1 27 mΩ
DC Resistance 2 27 mΩ
DC Resistance 1 35 mΩ
DC Resistance 2 35 mΩ
Self Resonant Frequency [1] 60 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 1500 nH, 1500 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 1500 nH
Inductance 2 1500 nH
Turns Ratio 1:1 
Rated Current 5.85 A
Rated Current 2 5.85 A
Saturation Current 14 A
DC Resistance 1 12 mΩ
DC Resistance 2 12 mΩ
DC Resistance 1 16 mΩ
DC Resistance 2 16 mΩ
Self Resonant Frequency [1] 70 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 1500 nH, 1500 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 1500 nH
Inductance 2 1500 nH
Turns Ratio 1:1 
Rated Current 6.25 A
Rated Current 2 6.25 A
Saturation Current 18 A
DC Resistance 1 11 mΩ
DC Resistance 2 11 mΩ
DC Resistance 1 15 mΩ
DC Resistance 2 15 mΩ
Self Resonant Frequency [1] 75 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 1500 nH, 1500 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 1500 nH
Inductance 2 1500 nH
Turns Ratio 1:1 
Rated Current 8.6 A
Rated Current 2 8.6 A
Saturation Current 17.5 A
DC Resistance 1 12 mΩ
DC Resistance 2 12 mΩ
DC Resistance 1 16 mΩ
DC Resistance 2 16 mΩ
Self Resonant Frequency [1] 60 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 1500 nH, 1500 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 1500 nH
Inductance 2 1500 nH
Turns Ratio 1:1 
Rated Current 12.5 A
Rated Current 2 12.5 A
Saturation Current 1 34 A
Saturation Current 2 34 A
DC Resistance 1 8.8 mΩ
DC Resistance 2 8.8 mΩ
DC Resistance 1 9.4 mΩ
DC Resistance 2 9.4 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 1500 nH, 1500 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 1500 nH
Inductance 2 1500 nH
Turns Ratio 1:1 
Rated Current 11.1 A
Rated Current 2 11.1 A
Saturation Current 1 28.1 A
Saturation Current 2 28.1 A
DC Resistance 1 8.6 mΩ
DC Resistance 2 8.6 mΩ
DC Resistance 1 10 mΩ
DC Resistance 2 10 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 1700 nH, 1700 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 1700 nH
Inductance 2 1700 nH
Turns Ratio 1:1 
Rated Current 21 A
Rated Current 2 21 A
Saturation Current 1 39 A
Saturation Current 2 39 A
DC Resistance 1 3.3 mΩ
DC Resistance 2 3.3 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 1800 nH, 1800 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 1800 nH
Inductance 2 1800 nH
Turns Ratio 1:1 
Rated Current 2.85 A
Rated Current 2 2.85 A
Saturation Current 5.8 A
Saturation Current 1 5.8 A
Saturation Current 2 5.8 A
DC Resistance 1 25.5 mΩ
DC Resistance 2 25.5 mΩ
DC Resistance 1 31 mΩ
DC Resistance 2 31 mΩ
Self Resonant Frequency [1] 60 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 1800 nH
Inductance 2 1800 nH
Turns Ratio 1:1 
Rated Current 4.7 A
Rated Current 2 4.7 A
Saturation Current 6.5 A
DC Resistance 1 25 mΩ
DC Resistance 2 25 mΩ
DC Resistance 1 34 mΩ
DC Resistance 2 34 mΩ
Self Resonant Frequency [1] 58 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 2200 nH, 2200 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2200 nH
Inductance 2 2200 nH
Turns Ratio 1:1 
Rated Current 1.9 A
Rated Current 2 1.9 A
Saturation Current 3.5 A
Saturation Current 1 3.5 A
Saturation Current 2 3.5 A
DC Resistance 1 49.5 mΩ
DC Resistance 2 49.5 mΩ
DC Resistance 1 58 mΩ
DC Resistance 2 58 mΩ
Self Resonant Frequency [1] 85 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 2200 nH, 2200 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2200 nH
Inductance 2 2200 nH
Turns Ratio 1:1 
Rated Current 4.1 A
Rated Current 2 4.1 A
Saturation Current 19 A
DC Resistance 1 15 mΩ
DC Resistance 2 15 mΩ
DC Resistance 1 17 mΩ
DC Resistance 2 17 mΩ
Self Resonant Frequency [1] 45 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 2200 nH, 2200 nH, –
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2200 nH
Inductance 2 2200 nH
Rated Current 8.6 A
Rated Current 2 8.6 A
Saturation Current 17 A
DC Resistance 1 7.4 mΩ
DC Resistance 2 7.4 mΩ
DC Resistance 1 8.5 mΩ
DC Resistance 2 8.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 2200 nH, 2200 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2200 nH
Inductance 2 2200 nH
Turns Ratio 1:1 
Rated Current 18 A
Rated Current 2 18 A
Saturation Current 1 35 A
Saturation Current 2 35 A
DC Resistance 1 4.2 mΩ
DC Resistance 2 4.2 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 2200 nH, 2200 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2200 nH
Inductance 2 2200 nH
Turns Ratio 1:1 
Rated Current 3.9 A
Rated Current 2 3.9 A
Saturation Current 3.4 A
Saturation Current 1 3.4 A
DC Resistance 1 33 mΩ
DC Resistance 2 33 mΩ
DC Resistance 1 47 mΩ
DC Resistance 2 47 mΩ
Self Resonant Frequency [1] 80 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2200 nH
Inductance 2 2200 nH
Turns Ratio 1:1 
Rated Current 2.5 A
Rated Current 2 2.5 A
Saturation Current 3.2 A
DC Resistance 1 50 mΩ
DC Resistance 2 50 mΩ
DC Resistance 1 72 mΩ
DC Resistance 2 72 mΩ
Self Resonant Frequency [1] 95 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 2200 nH, 2200 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2200 nH
Inductance 2 2200 nH
Turns Ratio 1:1 
Rated Current 11.5 A
Rated Current 2 11.5 A
Saturation Current 1 29.5 A
Saturation Current 2 29.5 A
DC Resistance 1 10.5 mΩ
DC Resistance 2 10.5 mΩ
DC Resistance 1 12.5 mΩ
DC Resistance 2 12.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 2200 nH, 2200 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2200 nH
Inductance 2 2200 nH
Turns Ratio 1:1 
Rated Current 8.2 A
Rated Current 2 8.2 A
Saturation Current 1 20.6 A
Saturation Current 2 20.6 A
DC Resistance 1 14 mΩ
DC Resistance 2 14 mΩ
DC Resistance 1 16.5 mΩ
DC Resistance 2 16.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2400 nH
Inductance 2 2400 nH
Turns Ratio 1:1 
Rated Current 3.6 A
Rated Current 2 3.6 A
Saturation Current 4.8 A
DC Resistance 1 42 mΩ
DC Resistance 2 42 mΩ
DC Resistance 1 52 mΩ
DC Resistance 2 52 mΩ
Self Resonant Frequency [1] 53 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2400 nH
Inductance 2 2400 nH
Turns Ratio 1:1 
Rated Current 4.2 A
Rated Current 2 4.2 A
Saturation Current 5.6 A
DC Resistance 1 31 mΩ
DC Resistance 2 31 mΩ
DC Resistance 1 42 mΩ
DC Resistance 2 42 mΩ
Self Resonant Frequency [1] 50 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 2400 nH, 2400 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2400 nH
Inductance 2 2400 nH
Turns Ratio 1:1 
Rated Current 5.5 A
Rated Current 2 5.5 A
Saturation Current 11.5 A
DC Resistance 1 13 mΩ
DC Resistance 2 13 mΩ
DC Resistance 1 17 mΩ
DC Resistance 2 17 mΩ
Self Resonant Frequency [1] 54 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 2400 nH, 2400 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2400 nH
Inductance 2 2400 nH
Turns Ratio 1:1 
Rated Current 6 A
Rated Current 2 6 A
Saturation Current 14 A
DC Resistance 1 12 mΩ
DC Resistance 2 12 mΩ
DC Resistance 1 16 mΩ
DC Resistance 2 16 mΩ
Self Resonant Frequency [1] 54 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 2400 nH, 2400 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2400 nH
Inductance 2 2400 nH
Turns Ratio 1:1 
Rated Current 7.8 A
Rated Current 2 7.8 A
Saturation Current 15 A
DC Resistance 1 14 mΩ
DC Resistance 2 14 mΩ
DC Resistance 1 18 mΩ
DC Resistance 2 18 mΩ
Self Resonant Frequency [1] 40 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 2700 nH, 2700 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2700 nH
Inductance 2 2700 nH
Turns Ratio 1:1 
Rated Current 1.85 A
Rated Current 2 1.85 A
Saturation Current 3 A
Saturation Current 1 3 A
Saturation Current 2 3 A
DC Resistance 1 69.5 mΩ
DC Resistance 2 69.5 mΩ
DC Resistance 1 80.5 mΩ
DC Resistance 2 80.5 mΩ
Self Resonant Frequency [1] 65 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 2700 nH, 2700 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2700 nH
Inductance 2 2700 nH
Turns Ratio 1:1 
Rated Current 2.5 A
Rated Current 2 2.5 A
Saturation Current 5.1 A
Saturation Current 1 5.1 A
Saturation Current 2 5.1 A
DC Resistance 1 34.5 mΩ
DC Resistance 2 34.5 mΩ
DC Resistance 1 40 mΩ
DC Resistance 2 40 mΩ
Self Resonant Frequency [1] 55 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 2700 nH, 2700 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2700 nH
Inductance 2 2700 nH
Turns Ratio 1:1 
Rated Current 7.4 A
Rated Current 2 7.4 A
Saturation Current 1 16.5 A
Saturation Current 2 16.5 A
DC Resistance 1 16.3 mΩ
DC Resistance 2 16.3 mΩ
DC Resistance 1 16.8 mΩ
DC Resistance 2 16.8 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 2900 nH, 2900 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 2900 nH
Inductance 2 2900 nH
Turns Ratio 1:1 
Rated Current 17 A
Rated Current 2 17 A
Saturation Current 1 29 A
Saturation Current 2 29 A
DC Resistance 1 5.6 mΩ
DC Resistance 2 5.6 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 3300 nH
Inductance 2 3300 nH
Turns Ratio 1:1 
Rated Current 3.3 A
Rated Current 2 3.3 A
Saturation Current 4 A
DC Resistance 1 52 mΩ
DC Resistance 2 52 mΩ
DC Resistance 1 64 mΩ
DC Resistance 2 64 mΩ
Self Resonant Frequency [1] 49 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 3300 nH
Inductance 2 3300 nH
Turns Ratio 1:1 
Rated Current 3.7 A
Rated Current 2 3.7 A
Saturation Current 5 A
DC Resistance 1 40 mΩ
DC Resistance 2 40 mΩ
DC Resistance 1 52 mΩ
DC Resistance 2 52 mΩ
Self Resonant Frequency [1] 46 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 3300 nH, 3300 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 3300 nH
Inductance 2 3300 nH
Turns Ratio 1:1 
Rated Current 4.91 A
Rated Current 2 4.91 A
Saturation Current 8.9 A
DC Resistance 1 17 mΩ
DC Resistance 2 17 mΩ
DC Resistance 1 21 mΩ
DC Resistance 2 21 mΩ
Self Resonant Frequency [1] 45 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 3300 nH, 3300 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 3300 nH
Inductance 2 3300 nH
Turns Ratio 1:1 
Rated Current 5.14 A
Rated Current 2 5.14 A
Saturation Current 11 A
DC Resistance 1 17 mΩ
DC Resistance 2 17 mΩ
DC Resistance 1 22 mΩ
DC Resistance 2 22 mΩ
Self Resonant Frequency [1] 41 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 3300 nH, 3300 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 3300 nH
Inductance 2 3300 nH
Turns Ratio 1:1 
Rated Current 7.1 A
Rated Current 2 7.1 A
Saturation Current 12 A
DC Resistance 1 16 mΩ
DC Resistance 2 16 mΩ
DC Resistance 1 21 mΩ
DC Resistance 2 21 mΩ
Self Resonant Frequency [1] 30 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 3300 nH, 3300 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 3300 nH
Inductance 2 3300 nH
Turns Ratio 1:1 
Rated Current 3.7 A
Rated Current 2 3.7 A
Saturation Current 15.5 A
DC Resistance 1 17 mΩ
DC Resistance 2 17 mΩ
DC Resistance 1 20 mΩ
DC Resistance 2 20 mΩ
Self Resonant Frequency [1] 35 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 3300 nH, 3300 nH, –
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 3300 nH
Inductance 2 3300 nH
Rated Current 7.7 A
Rated Current 2 7.7 A
Saturation Current 13.5 A
DC Resistance 1 9 mΩ
DC Resistance 2 9 mΩ
DC Resistance 1 12 mΩ
DC Resistance 2 12 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 3300 nH, 3300 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 3300 nH
Inductance 2 3300 nH
Turns Ratio 1:1 
Rated Current 3.5 A
Rated Current 2 3.5 A
Saturation Current 2.5 A
Saturation Current 1 2.5 A
DC Resistance 1 40 mΩ
DC Resistance 2 40 mΩ
DC Resistance 1 57 mΩ
DC Resistance 2 57 mΩ
Self Resonant Frequency [1] 56 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 3300 nH, 3300 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 3300 nH
Inductance 2 3300 nH
Turns Ratio 1:1 
Rated Current 7.5 A
Rated Current 2 7.5 A
Saturation Current 1 28.2 A
Saturation Current 2 28.2 A
DC Resistance 1 23.5 mΩ
DC Resistance 2 23.5 mΩ
DC Resistance 1 26 mΩ
DC Resistance 2 26 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 3300 nH, 3300 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 3300 nH
Inductance 2 3300 nH
Turns Ratio 1:1 
Rated Current 6.8 A
Rated Current 2 6.8 A
Saturation Current 1 14.3 A
Saturation Current 2 14.3 A
DC Resistance 1 20.7 mΩ
DC Resistance 2 20.7 mΩ
DC Resistance 1 23.5 mΩ
DC Resistance 2 23.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 3500 nH, 3500 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 3500 nH
Inductance 2 3500 nH
Turns Ratio 1:1 
Rated Current 14 A
Rated Current 2 14 A
Saturation Current 1 27 A
Saturation Current 2 27 A
DC Resistance 1 7.5 mΩ
DC Resistance 2 7.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 3600 nH, 3600 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 3600 nH
Inductance 2 3600 nH
Turns Ratio 1:1 
Rated Current 2.3 A
Rated Current 2 2.3 A
Saturation Current 4.6 A
Saturation Current 1 4.6 A
Saturation Current 2 4.6 A
DC Resistance 1 47 mΩ
DC Resistance 2 47 mΩ
DC Resistance 1 53 mΩ
DC Resistance 2 53 mΩ
Self Resonant Frequency [1] 45 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 3900 nH, 3900 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 3900 nH
Inductance 2 3900 nH
Turns Ratio 1:1 
Rated Current 1.6 A
Rated Current 2 1.6 A
Saturation Current 2.55 A
Saturation Current 1 2.55 A
Saturation Current 2 2.55 A
DC Resistance 1 82 mΩ
DC Resistance 2 82 mΩ
DC Resistance 1 94 mΩ
DC Resistance 2 94 mΩ
Self Resonant Frequency [1] 60 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 4400 nH, 4400 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 4400 nH
Inductance 2 4400 nH
Turns Ratio 1:1 
Rated Current 12 A
Rated Current 2 12 A
Saturation Current 1 24 A
Saturation Current 2 24 A
DC Resistance 1 9.6 mΩ
DC Resistance 2 9.6 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 4700 nH, 4700 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 4700 nH
Inductance 2 4700 nH
Turns Ratio 1:1 
Rated Current 1.85 A
Rated Current 2 1.85 A
Saturation Current 4.2 A
Saturation Current 1 4.2 A
Saturation Current 2 4.2 A
DC Resistance 1 54.5 mΩ
DC Resistance 2 54.5 mΩ
DC Resistance 1 64 mΩ
DC Resistance 2 64 mΩ
Self Resonant Frequency [1] 30 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 4700 nH
Inductance 2 4700 nH
Turns Ratio 1:1 
Rated Current 1.3 A
Rated Current 2 1.3 A
Saturation Current 3 A
DC Resistance 1 65 mΩ
DC Resistance 2 65 mΩ
DC Resistance 1 75 mΩ
DC Resistance 2 75 mΩ
Self Resonant Frequency [1] 46 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 4700 nH
Inductance 2 4700 nH
Turns Ratio 1:1 
Rated Current 2.55 A
Rated Current 2 2.55 A
Saturation Current 4 A
DC Resistance 1 52 mΩ
DC Resistance 2 52 mΩ
DC Resistance 1 64 mΩ
DC Resistance 2 64 mΩ
Self Resonant Frequency [1] 42 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 4700 nH, 4700 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 4700 nH
Inductance 2 4700 nH
Turns Ratio 1:1 
Rated Current 4.22 A
Rated Current 2 4.22 A
Saturation Current 8 A
DC Resistance 1 23 mΩ
DC Resistance 2 23 mΩ
DC Resistance 1 28 mΩ
DC Resistance 2 28 mΩ
Self Resonant Frequency [1] 39 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 4700 nH, 4700 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 4700 nH
Inductance 2 4700 nH
Turns Ratio 1:1 
Rated Current 3 A
Rated Current 2 3 A
Saturation Current 8 A
DC Resistance 1 23 mΩ
DC Resistance 2 23 mΩ
DC Resistance 1 28 mΩ
DC Resistance 2 28 mΩ
Self Resonant Frequency [1] 20 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 4700 nH, 4700 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 4700 nH
Inductance 2 4700 nH
Turns Ratio 1:1 
Rated Current 4.87 A
Rated Current 2 4.87 A
Saturation Current 10 A
DC Resistance 1 19 mΩ
DC Resistance 2 19 mΩ
DC Resistance 1 24 mΩ
DC Resistance 2 24 mΩ
Self Resonant Frequency [1] 32 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 4700 nH, 4700 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 4700 nH
Inductance 2 4700 nH
Turns Ratio 1:1 
Rated Current 3.6 A
Rated Current 2 3.6 A
Saturation Current 10 A
DC Resistance 1 25 mΩ
DC Resistance 2 25 mΩ
DC Resistance 1 30 mΩ
DC Resistance 2 30 mΩ
Self Resonant Frequency [1] 34 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 4700 nH, 4700 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 4700 nH
Inductance 2 4700 nH
Turns Ratio 1:1 
Rated Current 3.6 A
Rated Current 2 3.6 A
Saturation Current 13 A
DC Resistance 1 19 mΩ
DC Resistance 2 19 mΩ
DC Resistance 1 23 mΩ
DC Resistance 2 23 mΩ
Self Resonant Frequency [1] 30 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 4700 nH, 4700 nH, –
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 4700 nH
Inductance 2 4700 nH
Rated Current 7.2 A
Rated Current 2 7.2 A
Saturation Current 11 A
DC Resistance 1 10.3 mΩ
DC Resistance 2 10.3 mΩ
DC Resistance 1 14 mΩ
DC Resistance 2 14 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 4700 nH, 4700 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 4700 nH
Inductance 2 4700 nH
Turns Ratio 1:1 
Rated Current 3.1 A
Rated Current 2 3.1 A
Saturation Current 2.1 A
Saturation Current 1 2.1 A
DC Resistance 1 44 mΩ
DC Resistance 2 44 mΩ
DC Resistance 1 62 mΩ
DC Resistance 2 62 mΩ
Self Resonant Frequency [1] 46 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 4700 nH, 4700 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 4700 nH
Inductance 2 4700 nH
Turns Ratio 1:1 
Rated Current 5.9 A
Rated Current 2 5.9 A
Saturation Current 1 24.2 A
Saturation Current 2 24.2 A
DC Resistance 1 36 mΩ
DC Resistance 2 36 mΩ
DC Resistance 1 40 mΩ
DC Resistance 2 40 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 4700 nH
Inductance 2 4700 nH
Turns Ratio 1:1 
Rated Current 2.45 A
Rated Current 2 2.45 A
Saturation Current 1 4.7 A
Saturation Current 2 4.7 A
DC Resistance 1 85 mΩ
DC Resistance 2 85 mΩ
DC Resistance 1 110 mΩ
DC Resistance 2 110 mΩ
Self Resonant Frequency [1] 43 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 4700 nH, 4700 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 4700 nH
Inductance 2 4700 nH
Turns Ratio 1:1 
Rated Current 6.2 A
Rated Current 2 6.2 A
Saturation Current 1 13.8 A
Saturation Current 2 13.8 A
DC Resistance 1 24.4 mΩ
DC Resistance 2 24.4 mΩ
DC Resistance 1 29 mΩ
DC Resistance 2 29 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 5600 nH, 5600 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 5600 nH
Inductance 2 5600 nH
Turns Ratio 1:1 
Rated Current 1.45 A
Rated Current 2 1.45 A
Saturation Current 2.2 A
Saturation Current 1 2.2 A
Saturation Current 2 2.2 A
DC Resistance 1 114 mΩ
DC Resistance 2 114 mΩ
DC Resistance 1 131 mΩ
DC Resistance 2 131 mΩ
Self Resonant Frequency [1] 50 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 5600 nH
Inductance 2 5600 nH
Turns Ratio 1:1 
Rated Current 1.5 A
Rated Current 2 1.5 A
Saturation Current 3 A
DC Resistance 1 95 mΩ
DC Resistance 2 95 mΩ
DC Resistance 1 120 mΩ
DC Resistance 2 120 mΩ
Self Resonant Frequency [1] 26 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 5600 nH
Inductance 2 5600 nH
Turns Ratio 1:1 
Rated Current 1.9 A
Rated Current 2 1.9 A
Saturation Current 3.5 A
DC Resistance 1 80 mΩ
DC Resistance 2 80 mΩ
DC Resistance 1 95 mΩ
DC Resistance 2 95 mΩ
Self Resonant Frequency [1] 23 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 5600 nH
Inductance 2 5600 nH
Turns Ratio 1:1 
Rated Current 1.4 A
Rated Current 2 1.4 A
Saturation Current 1 2 A
Saturation Current 2 2 A
DC Resistance 1 190 mΩ
DC Resistance 2 190 mΩ
DC Resistance 1 234 mΩ
DC Resistance 2 234 mΩ
Self Resonant Frequency [1] 58 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 6800 nH, 6800 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 6800 nH
Inductance 2 6800 nH
Turns Ratio 1:1 
Rated Current 1.25 A
Rated Current 2 1.25 A
Saturation Current 2 A
Saturation Current 1 2 A
Saturation Current 2 2 A
DC Resistance 1 128 mΩ
DC Resistance 2 128 mΩ
DC Resistance 1 146 mΩ
DC Resistance 2 146 mΩ
Self Resonant Frequency [1] 46 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 6800 nH, 6800 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 6800 nH
Inductance 2 6800 nH
Turns Ratio 1:1 
Rated Current 1.45 A
Rated Current 2 1.45 A
Saturation Current 3.2 A
Saturation Current 1 3.2 A
Saturation Current 2 3.2 A
DC Resistance 1 88 mΩ
DC Resistance 2 88 mΩ
DC Resistance 1 100 mΩ
DC Resistance 2 100 mΩ
Self Resonant Frequency [1] 25 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 6800 nH
Inductance 2 6800 nH
Turns Ratio 1:1 
Rated Current 1.4 A
Rated Current 2 1.4 A
Saturation Current 2.8 A
DC Resistance 1 110 mΩ
DC Resistance 2 110 mΩ
DC Resistance 1 135 mΩ
DC Resistance 2 135 mΩ
Self Resonant Frequency [1] 25 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 6800 nH
Inductance 2 6800 nH
Turns Ratio 1:1 
Rated Current 1.8 A
Rated Current 2 1.8 A
Saturation Current 3.2 A
DC Resistance 1 85 mΩ
DC Resistance 2 85 mΩ
DC Resistance 1 102 mΩ
DC Resistance 2 102 mΩ
Self Resonant Frequency [1] 20 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 6800 nH, 6800 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 6800 nH
Inductance 2 6800 nH
Turns Ratio 1:1 
Rated Current 3.9 A
Rated Current 2 3.9 A
Saturation Current 6.8 A
DC Resistance 1 27 mΩ
DC Resistance 2 27 mΩ
DC Resistance 1 32 mΩ
DC Resistance 2 32 mΩ
Self Resonant Frequency [1] 33 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 6800 nH, 6800 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 6800 nH
Inductance 2 6800 nH
Turns Ratio 1:1 
Rated Current 2.8 A
Rated Current 2 2.8 A
Saturation Current 6.5 A
DC Resistance 1 35 mΩ
DC Resistance 2 35 mΩ
DC Resistance 1 40 mΩ
DC Resistance 2 40 mΩ
Self Resonant Frequency [1] 20 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 6800 nH, 6800 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 6800 nH
Inductance 2 6800 nH
Turns Ratio 1:1 
Rated Current 3.2 A
Rated Current 2 3.2 A
Saturation Current 8 A
DC Resistance 1 27 mΩ
DC Resistance 2 27 mΩ
DC Resistance 1 35 mΩ
DC Resistance 2 35 mΩ
Self Resonant Frequency [1] 18 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 6800 nH, 6800 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 6800 nH
Inductance 2 6800 nH
Turns Ratio 1:1 
Rated Current 3.3 A
Rated Current 2 3.3 A
Saturation Current 11.5 A
DC Resistance 1 26 mΩ
DC Resistance 2 26 mΩ
DC Resistance 1 31 mΩ
DC Resistance 2 31 mΩ
Self Resonant Frequency [1] 23 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 6800 nH, 6800 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 6800 nH
Inductance 2 6800 nH
Turns Ratio 1:1 
Rated Current 2.3 A
Rated Current 2 2.3 A
Saturation Current 1.8 A
Saturation Current 1 1.8 A
DC Resistance 1 60 mΩ
DC Resistance 2 60 mΩ
DC Resistance 1 85 mΩ
DC Resistance 2 85 mΩ
Self Resonant Frequency [1] 42 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 6800 nH, 6800 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 6800 nH
Inductance 2 6800 nH
Turns Ratio 1:1 
Rated Current 14 A
Rated Current 2 14 A
Saturation Current 1 16 A
Saturation Current 2 16 A
DC Resistance 1 11.3 mΩ
DC Resistance 2 11.3 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 6800 nH, 6800 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 6800 nH
Inductance 2 6800 nH
Turns Ratio 1:1 
Rated Current 13.5 A
Rated Current 2 13.5 A
Saturation Current 1 26 A
Saturation Current 2 26 A
DC Resistance 1 6.1 mΩ
DC Resistance 2 6.1 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 6800 nH, 6800 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 6800 nH
Inductance 2 6800 nH
Turns Ratio 1:1 
Rated Current 5 A
Rated Current 2 5 A
Saturation Current 1 21.2 A
Saturation Current 2 21.2 A
DC Resistance 1 46 mΩ
DC Resistance 2 46 mΩ
DC Resistance 1 51.5 mΩ
DC Resistance 2 51.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 6800 nH, 6800 nH, 1:1
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 6800 nH
Inductance 2 6800 nH
Turns Ratio 1:1 
Rated Current 5 A
Rated Current 2 5 A
Saturation Current 1 12 A
Saturation Current 2 12 A
DC Resistance 1 38 mΩ
DC Resistance 2 38 mΩ
DC Resistance 1 44 mΩ
DC Resistance 2 44 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications 7000 nH, 70000000 nH, 1 : 100
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 7000 nH
Inductance 2 70000000 nH
Turns Ratio 1 : 100 
Rated Current 1.9 A
Rated Current 1.9 A
Saturation Current 1.3 A
Saturation Current 1 1.3 A
DC Resistance 1 85 mΩ
DC Resistance 2 205000 mΩ
DC Resistance 1 95 mΩ
DC Resistance 2 240000 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 8200 nH
Inductance 2 8200 nH
Turns Ratio 1:1 
Rated Current 1.3 A
Rated Current 2 1.3 A
Saturation Current 2.7 A
DC Resistance 1 115 mΩ
DC Resistance 2 115 mΩ
DC Resistance 1 140 mΩ
DC Resistance 2 140 mΩ
Self Resonant Frequency [1] 22 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Active i | Production is active. Expected lifetime: >10 years.
Inductance 1 8200 nH
Inductance 2 8200 nH
Turns Ratio 1:1 
Rated Current 1.7 A
Rated Current 2 1.7 A
Saturation Current 2.9 A
DC Resistance 1 91 mΩ
DC Resistance 2 91 mΩ
DC Resistance 1 110 mΩ
DC Resistance 2 110 mΩ
Self Resonant Frequency [1] 17 MHz
Design Kit