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11 Product categories
WE-EHPI Energy Harvesting Coupled Inductor
WE-EHPI Energy Harvesting Coupled Inductor
IR 1.5 to 1.9 AIR 1.5 to 1.9 ARDC1 max 0.095 to 0.24 Ω
WE-TDC SMT Shielded Coupled Inductor
WE-TDC SMT Shielded Coupled Inductor
IR 0.7 to 4.5 ARDC1 max 14.5 to 480 mΩRDC2 max 14.5 to 480 mΩ
WE-DD SMT Shielded Coupled Inductor
WE-DD SMT Shielded Coupled Inductor
IR 0.3 to 8.6 ARDC1 max 0.015 Ω to 2320 mΩRDC2 max 0.015 Ω to 2320 mΩ
WE-DCT Toroidal Double Power Choke
WE-DCT Toroidal Double Power Choke
IR 1.1 to 14.5 ARDC1 max 3.5 to 290 mΩRDC2 max 3.5 to 290 mΩ
WE-CFWI Coupled Flatwire Inductor
WE-CFWI Coupled Flatwire Inductor
IR 11.5 to 28 ARDC 1 1.6 to 13.9 mΩRDC 2 1.6 to 13.9 mΩ
WE-DPC SMT Dual Powerchoke
WE-DPC SMT Dual Powerchoke
IR 0.9 to 4.5 ARDC1 max 35 to 350 mΩRDC2 max 35 to 350 mΩ
WE-DPC HV SMT Dual Powerchoke
WE-DPC HV SMT Dual Powerchoke
IR 2.5 ARDC1 max 72 mΩRDC2 max 72 mΩ
WE-MCRI SMT Molded Coupled Inductor
WE-MCRI SMT Molded Coupled Inductor
IR 1.5 to 17 ARDC1 max 5.6 to 340 mΩRDC2 max 5.6 to 340 mΩ
WE-MTCI SMT Multi-Turn Ratio coupled Inductor
WE-MTCI SMT Multi-Turn Ratio coupled Inductor
IR 0.45 to 0.95 ARDC1 max 500 to 1900 mΩRDC2 max 600 to 5200 mΩ
WE-TDC HV SMT Coupled Inductor
WE-TDC HV SMT Coupled Inductor
IR 0.75 to 2.45 ARDC1 max 110 to 780 mΩRDC2 max 110 to 780 mΩ
EXT.
WE-HCMD High Current Inductor for TLVR Applications
WE-HCMD High Current Inductor for TLVR ApplicationsEXTENDED
ShieldedL1 70 to 200 nHIRP,1 78 A
Order Code
Data­sheet
Simu­lation
Downloads
Status
L1(nH)
L2(nH)
n
IR(A)
IR(A)
IR 2(A)
ISAT(A)
ISAT1(A)
ISAT2(A)
RDC1 typ(mΩ)
RDC2 typ(mΩ)
RDC1 max(mΩ)
RDC2 max(mΩ)
RDC 1(mΩ)
RDC 2(mΩ)
fres 1(MHz)
Product series
Design Kit
Samples
WE-HCMD High Current Inductor for TLVR Applications70 nH, 70 nH, –
Simu­lation
Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 170 nH
Inductance 270 nH
DC Resistance 10.125 mΩ
DC Resistance 20.37 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications70 nH, 70 nH, –
Simu­lation
Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 170 nH
Inductance 270 nH
DC Resistance 10.125 mΩ
DC Resistance 20.33 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications91 nH, 91 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 191 nH
Inductance 291 nH
Rated Current14.5 A
Rated Current 214.5 A
Saturation Current120 A
DC Resistance 12.8 mΩ
DC Resistance 22.8 mΩ
DC Resistance 13.5 mΩ
DC Resistance 23.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications100 nH, 100 nH, –
Simu­lation
Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1100 nH
Inductance 2100 nH
DC Resistance 10.125 mΩ
DC Resistance 20.33 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications105 nH, 105 nH, –
Simu­lation
Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1105 nH
Inductance 2105 nH
DC Resistance 10.125 mΩ
DC Resistance 20.37 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications120 nH, 120 nH, –
Simu­lation
Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1120 nH
Inductance 2120 nH
DC Resistance 10.125 mΩ
DC Resistance 20.33 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications120 nH, 120 nH, –
Simu­lation
Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1120 nH
Inductance 2120 nH
DC Resistance 10.125 mΩ
DC Resistance 20.37 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications150 nH, 150 nH, –
Simu­lation
Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1150 nH
Inductance 2150 nH
DC Resistance 10.125 mΩ
DC Resistance 20.33 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications150 nH, 150 nH, –
Simu­lation
Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1150 nH
Inductance 2150 nH
DC Resistance 10.125 mΩ
DC Resistance 20.37 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications160 nH, 160 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 1160 nH
Inductance 2160 nH
Rated Current13.8 A
Rated Current 213.8 A
Saturation Current90 A
DC Resistance 13.4 mΩ
DC Resistance 23.4 mΩ
DC Resistance 14.4 mΩ
DC Resistance 24.4 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications180 nH, 180 nH, –
Simu­lation
Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1180 nH
Inductance 2180 nH
DC Resistance 10.125 mΩ
DC Resistance 20.37 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications200 nH, 200 nH, –
Simu­lation
Status Newi| Product is new in our portfolio and production is active. Expected lifetime: >10 years.
Inductance 1200 nH
Inductance 2200 nH
DC Resistance 10.125 mΩ
DC Resistance 20.37 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications270 nH, 270 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 1270 nH
Inductance 2270 nH
Rated Current12.3 A
Rated Current 212.3 A
Saturation Current65 A
DC Resistance 14 mΩ
DC Resistance 24 mΩ
DC Resistance 15 mΩ
DC Resistance 25 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications330 nH, 330 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 1330 nH
Inductance 2330 nH
Turns Ratio1:1 
Rated Current4 A
Rated Current 24 A
Saturation Current9 A
Saturation Current 19 A
Saturation Current 29 A
DC Resistance 111.1 mΩ
DC Resistance 211.1 mΩ
DC Resistance 115 mΩ
DC Resistance 215 mΩ
Self Resonant Frequency [1]280 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications390 nH, 390 nH, 1:1
Simu­lation
Status NRNDi| Production is active. Product is not recommended for new design. Expected lifetime: 2-5 years.
Inductance 1390 nH
Inductance 2390 nH
Turns Ratio1:1 
Rated Current4.5 A
Rated Current 24.5 A
Saturation Current14 A
Saturation Current 114 A
Saturation Current 214 A
DC Resistance 111.6 mΩ
DC Resistance 211.6 mΩ
DC Resistance 114.5 mΩ
DC Resistance 214.5 mΩ
Self Resonant Frequency [1]210 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications390 nH, 390 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 1390 nH
Inductance 2390 nH
Rated Current10.6 A
Rated Current 210.6 A
Saturation Current50 A
DC Resistance 14.7 mΩ
DC Resistance 24.7 mΩ
DC Resistance 16 mΩ
DC Resistance 26 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications560 nH, 560 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 1560 nH
Inductance 2560 nH
Rated Current9.8 A
Rated Current 29.8 A
Saturation Current40 A
DC Resistance 15.3 mΩ
DC Resistance 25.3 mΩ
DC Resistance 16.7 mΩ
DC Resistance 26.7 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications680 nH, 680 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 1680 nH
Inductance 2680 nH
Turns Ratio1:1 
Rated Current3.3 A
Rated Current 23.3 A
Saturation Current6.5 A
Saturation Current 16.5 A
Saturation Current 26.5 A
DC Resistance 116.3 mΩ
DC Resistance 216.3 mΩ
DC Resistance 121 mΩ
DC Resistance 221 mΩ
Self Resonant Frequency [1]190 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications800 nH, 800 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 1800 nH
Inductance 2800 nH
Turns Ratio1:1 
Rated Current28 A
Rated Current 228 A
Saturation Current 162 A
Saturation Current 262 A
DC Resistance 11.6 mΩ
DC Resistance 21.6 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications820 nH, 820 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 1820 nH
Inductance 2820 nH
Turns Ratio1:1 
Rated Current3.7 A
Rated Current 23.7 A
Saturation Current9.6 A
Saturation Current 19.6 A
Saturation Current 29.6 A
DC Resistance 115.9 mΩ
DC Resistance 215.9 mΩ
DC Resistance 120 mΩ
DC Resistance 220 mΩ
Self Resonant Frequency [1]140 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications1000 nH, 1000 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 11000 nH
Inductance 21000 nH
Turns Ratio1:1 
Rated Current2.85 A
Rated Current 22.85 A
Saturation Current5.1 A
Saturation Current 15.1 A
Saturation Current 25.1 A
DC Resistance 122.2 mΩ
DC Resistance 222.2 mΩ
DC Resistance 128 mΩ
DC Resistance 228 mΩ
Self Resonant Frequency [1]136 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications1000 nH, 1000 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 11000 nH
Inductance 21000 nH
Rated Current8.6 A
Rated Current 28.6 A
Saturation Current30 A
DC Resistance 17.4 mΩ
DC Resistance 27.4 mΩ
DC Resistance 18.5 mΩ
DC Resistance 28.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications1000 nH, 1000 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 11000 nH
Inductance 21000 nH
Turns Ratio1:1 
Rated Current4.5 A
Rated Current 24.5 A
Saturation Current5 A
Saturation Current 15 A
DC Resistance 125 mΩ
DC Resistance 225 mΩ
DC Resistance 135 mΩ
DC Resistance 235 mΩ
Self Resonant Frequency [1]150 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications1000 nH, 1000 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 11000 nH
Inductance 21000 nH
Turns Ratio1:1 
Rated Current17 A
Rated Current 217 A
Saturation Current 143.5 A
Saturation Current 243.5 A
DC Resistance 14.5 mΩ
DC Resistance 24.5 mΩ
DC Resistance 15.6 mΩ
DC Resistance 25.6 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications1000 nH, 1000 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 11000 nH
Inductance 21000 nH
Turns Ratio1:1 
Rated Current12 A
Rated Current 212 A
Saturation Current 130.2 A
Saturation Current 230.2 A
DC Resistance 16.3 mΩ
DC Resistance 26.3 mΩ
DC Resistance 17.5 mΩ
DC Resistance 27.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications1200 nH, 1200 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 11200 nH
Inductance 21200 nH
Turns Ratio1:1 
Rated Current3.05 A
Rated Current 23.05 A
Saturation Current7.5 A
Saturation Current 17.5 A
Saturation Current 27.5 A
DC Resistance 120.2 mΩ
DC Resistance 220.2 mΩ
DC Resistance 126 mΩ
DC Resistance 226 mΩ
Self Resonant Frequency [1]90 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications1200 nH, 1200 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 11200 nH
Inductance 21200 nH
Turns Ratio1:1 
Rated Current23 A
Rated Current 223 A
Saturation Current 147 A
Saturation Current 247 A
DC Resistance 12.4 mΩ
DC Resistance 22.4 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 11300 nH
Inductance 21300 nH
Turns Ratio1:1 
Rated Current4.4 A
Rated Current 24.4 A
Saturation Current6.3 A
DC Resistance 127 mΩ
DC Resistance 227 mΩ
DC Resistance 135 mΩ
DC Resistance 235 mΩ
Self Resonant Frequency [1]60 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications1500 nH, 1500 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 11500 nH
Inductance 21500 nH
Turns Ratio1:1 
Rated Current5.85 A
Rated Current 25.85 A
Saturation Current14 A
DC Resistance 112 mΩ
DC Resistance 212 mΩ
DC Resistance 116 mΩ
DC Resistance 216 mΩ
Self Resonant Frequency [1]70 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications1500 nH, 1500 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 11500 nH
Inductance 21500 nH
Turns Ratio1:1 
Rated Current6.25 A
Rated Current 26.25 A
Saturation Current18 A
DC Resistance 111 mΩ
DC Resistance 211 mΩ
DC Resistance 115 mΩ
DC Resistance 215 mΩ
Self Resonant Frequency [1]75 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications1500 nH, 1500 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 11500 nH
Inductance 21500 nH
Turns Ratio1:1 
Rated Current8.6 A
Rated Current 28.6 A
Saturation Current17.5 A
DC Resistance 112 mΩ
DC Resistance 212 mΩ
DC Resistance 116 mΩ
DC Resistance 216 mΩ
Self Resonant Frequency [1]60 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications1500 nH, 1500 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 11500 nH
Inductance 21500 nH
Turns Ratio1:1 
Rated Current12.5 A
Rated Current 212.5 A
Saturation Current 134 A
Saturation Current 234 A
DC Resistance 18.8 mΩ
DC Resistance 28.8 mΩ
DC Resistance 19.4 mΩ
DC Resistance 29.4 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications1500 nH, 1500 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 11500 nH
Inductance 21500 nH
Turns Ratio1:1 
Rated Current11.1 A
Rated Current 211.1 A
Saturation Current 128.1 A
Saturation Current 228.1 A
DC Resistance 18.6 mΩ
DC Resistance 28.6 mΩ
DC Resistance 110 mΩ
DC Resistance 210 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications1700 nH, 1700 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 11700 nH
Inductance 21700 nH
Turns Ratio1:1 
Rated Current21 A
Rated Current 221 A
Saturation Current 139 A
Saturation Current 239 A
DC Resistance 13.3 mΩ
DC Resistance 23.3 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications1800 nH, 1800 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 11800 nH
Inductance 21800 nH
Turns Ratio1:1 
Rated Current2.85 A
Rated Current 22.85 A
Saturation Current5.8 A
Saturation Current 15.8 A
Saturation Current 25.8 A
DC Resistance 125.5 mΩ
DC Resistance 225.5 mΩ
DC Resistance 131 mΩ
DC Resistance 231 mΩ
Self Resonant Frequency [1]60 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 11800 nH
Inductance 21800 nH
Turns Ratio1:1 
Rated Current4.7 A
Rated Current 24.7 A
Saturation Current6.5 A
DC Resistance 125 mΩ
DC Resistance 225 mΩ
DC Resistance 134 mΩ
DC Resistance 234 mΩ
Self Resonant Frequency [1]58 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications2200 nH, 2200 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12200 nH
Inductance 22200 nH
Turns Ratio1:1 
Rated Current1.9 A
Rated Current 21.9 A
Saturation Current3.5 A
Saturation Current 13.5 A
Saturation Current 23.5 A
DC Resistance 149.5 mΩ
DC Resistance 249.5 mΩ
DC Resistance 158 mΩ
DC Resistance 258 mΩ
Self Resonant Frequency [1]85 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications2200 nH, 2200 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12200 nH
Inductance 22200 nH
Turns Ratio1:1 
Rated Current4.1 A
Rated Current 24.1 A
Saturation Current19 A
DC Resistance 115 mΩ
DC Resistance 215 mΩ
DC Resistance 117 mΩ
DC Resistance 217 mΩ
Self Resonant Frequency [1]45 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications2200 nH, 2200 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12200 nH
Inductance 22200 nH
Rated Current8.6 A
Rated Current 28.6 A
Saturation Current17 A
DC Resistance 17.4 mΩ
DC Resistance 27.4 mΩ
DC Resistance 18.5 mΩ
DC Resistance 28.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications2200 nH, 2200 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12200 nH
Inductance 22200 nH
Turns Ratio1:1 
Rated Current18 A
Rated Current 218 A
Saturation Current 135 A
Saturation Current 235 A
DC Resistance 14.2 mΩ
DC Resistance 24.2 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications2200 nH, 2200 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12200 nH
Inductance 22200 nH
Turns Ratio1:1 
Rated Current3.9 A
Rated Current 23.9 A
Saturation Current3.4 A
Saturation Current 13.4 A
DC Resistance 133 mΩ
DC Resistance 233 mΩ
DC Resistance 147 mΩ
DC Resistance 247 mΩ
Self Resonant Frequency [1]80 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12200 nH
Inductance 22200 nH
Turns Ratio1:1 
Rated Current2.5 A
Rated Current 22.5 A
Saturation Current3.2 A
DC Resistance 150 mΩ
DC Resistance 250 mΩ
DC Resistance 172 mΩ
DC Resistance 272 mΩ
Self Resonant Frequency [1]95 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications2200 nH, 2200 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12200 nH
Inductance 22200 nH
Turns Ratio1:1 
Rated Current11.5 A
Rated Current 211.5 A
Saturation Current 129.5 A
Saturation Current 229.5 A
DC Resistance 110.5 mΩ
DC Resistance 210.5 mΩ
DC Resistance 112.5 mΩ
DC Resistance 212.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications2200 nH, 2200 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12200 nH
Inductance 22200 nH
Turns Ratio1:1 
Rated Current8.2 A
Rated Current 28.2 A
Saturation Current 120.6 A
Saturation Current 220.6 A
DC Resistance 114 mΩ
DC Resistance 214 mΩ
DC Resistance 116.5 mΩ
DC Resistance 216.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12400 nH
Inductance 22400 nH
Turns Ratio1:1 
Rated Current3.6 A
Rated Current 23.6 A
Saturation Current4.8 A
DC Resistance 142 mΩ
DC Resistance 242 mΩ
DC Resistance 152 mΩ
DC Resistance 252 mΩ
Self Resonant Frequency [1]53 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12400 nH
Inductance 22400 nH
Turns Ratio1:1 
Rated Current4.2 A
Rated Current 24.2 A
Saturation Current5.6 A
DC Resistance 131 mΩ
DC Resistance 231 mΩ
DC Resistance 142 mΩ
DC Resistance 242 mΩ
Self Resonant Frequency [1]50 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications2400 nH, 2400 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12400 nH
Inductance 22400 nH
Turns Ratio1:1 
Rated Current5.5 A
Rated Current 25.5 A
Saturation Current11.5 A
DC Resistance 113 mΩ
DC Resistance 213 mΩ
DC Resistance 117 mΩ
DC Resistance 217 mΩ
Self Resonant Frequency [1]54 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications2400 nH, 2400 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12400 nH
Inductance 22400 nH
Turns Ratio1:1 
Rated Current6 A
Rated Current 26 A
Saturation Current14 A
DC Resistance 112 mΩ
DC Resistance 212 mΩ
DC Resistance 116 mΩ
DC Resistance 216 mΩ
Self Resonant Frequency [1]54 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications2400 nH, 2400 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12400 nH
Inductance 22400 nH
Turns Ratio1:1 
Rated Current7.8 A
Rated Current 27.8 A
Saturation Current15 A
DC Resistance 114 mΩ
DC Resistance 214 mΩ
DC Resistance 118 mΩ
DC Resistance 218 mΩ
Self Resonant Frequency [1]40 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications2700 nH, 2700 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12700 nH
Inductance 22700 nH
Turns Ratio1:1 
Rated Current1.85 A
Rated Current 21.85 A
Saturation Current3 A
Saturation Current 13 A
Saturation Current 23 A
DC Resistance 169.5 mΩ
DC Resistance 269.5 mΩ
DC Resistance 180.5 mΩ
DC Resistance 280.5 mΩ
Self Resonant Frequency [1]65 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications2700 nH, 2700 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12700 nH
Inductance 22700 nH
Turns Ratio1:1 
Rated Current2.5 A
Rated Current 22.5 A
Saturation Current5.1 A
Saturation Current 15.1 A
Saturation Current 25.1 A
DC Resistance 134.5 mΩ
DC Resistance 234.5 mΩ
DC Resistance 140 mΩ
DC Resistance 240 mΩ
Self Resonant Frequency [1]55 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications2700 nH, 2700 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12700 nH
Inductance 22700 nH
Turns Ratio1:1 
Rated Current7.4 A
Rated Current 27.4 A
Saturation Current 116.5 A
Saturation Current 216.5 A
DC Resistance 116.3 mΩ
DC Resistance 216.3 mΩ
DC Resistance 116.8 mΩ
DC Resistance 216.8 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications2900 nH, 2900 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 12900 nH
Inductance 22900 nH
Turns Ratio1:1 
Rated Current17 A
Rated Current 217 A
Saturation Current 129 A
Saturation Current 229 A
DC Resistance 15.6 mΩ
DC Resistance 25.6 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 13300 nH
Inductance 23300 nH
Turns Ratio1:1 
Rated Current3.3 A
Rated Current 23.3 A
Saturation Current4 A
DC Resistance 152 mΩ
DC Resistance 252 mΩ
DC Resistance 164 mΩ
DC Resistance 264 mΩ
Self Resonant Frequency [1]49 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 13300 nH
Inductance 23300 nH
Turns Ratio1:1 
Rated Current3.7 A
Rated Current 23.7 A
Saturation Current5 A
DC Resistance 140 mΩ
DC Resistance 240 mΩ
DC Resistance 152 mΩ
DC Resistance 252 mΩ
Self Resonant Frequency [1]46 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications3300 nH, 3300 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 13300 nH
Inductance 23300 nH
Turns Ratio1:1 
Rated Current4.91 A
Rated Current 24.91 A
Saturation Current8.9 A
DC Resistance 117 mΩ
DC Resistance 217 mΩ
DC Resistance 121 mΩ
DC Resistance 221 mΩ
Self Resonant Frequency [1]45 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications3300 nH, 3300 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 13300 nH
Inductance 23300 nH
Turns Ratio1:1 
Rated Current5.14 A
Rated Current 25.14 A
Saturation Current11 A
DC Resistance 117 mΩ
DC Resistance 217 mΩ
DC Resistance 122 mΩ
DC Resistance 222 mΩ
Self Resonant Frequency [1]41 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications3300 nH, 3300 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 13300 nH
Inductance 23300 nH
Turns Ratio1:1 
Rated Current7.1 A
Rated Current 27.1 A
Saturation Current12 A
DC Resistance 116 mΩ
DC Resistance 216 mΩ
DC Resistance 121 mΩ
DC Resistance 221 mΩ
Self Resonant Frequency [1]30 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications3300 nH, 3300 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 13300 nH
Inductance 23300 nH
Turns Ratio1:1 
Rated Current3.7 A
Rated Current 23.7 A
Saturation Current15.5 A
DC Resistance 117 mΩ
DC Resistance 217 mΩ
DC Resistance 120 mΩ
DC Resistance 220 mΩ
Self Resonant Frequency [1]35 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications3300 nH, 3300 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 13300 nH
Inductance 23300 nH
Rated Current7.7 A
Rated Current 27.7 A
Saturation Current13.5 A
DC Resistance 19 mΩ
DC Resistance 29 mΩ
DC Resistance 112 mΩ
DC Resistance 212 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications3300 nH, 3300 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 13300 nH
Inductance 23300 nH
Turns Ratio1:1 
Rated Current3.5 A
Rated Current 23.5 A
Saturation Current2.5 A
Saturation Current 12.5 A
DC Resistance 140 mΩ
DC Resistance 240 mΩ
DC Resistance 157 mΩ
DC Resistance 257 mΩ
Self Resonant Frequency [1]56 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications3300 nH, 3300 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 13300 nH
Inductance 23300 nH
Turns Ratio1:1 
Rated Current7.5 A
Rated Current 27.5 A
Saturation Current 128.2 A
Saturation Current 228.2 A
DC Resistance 123.5 mΩ
DC Resistance 223.5 mΩ
DC Resistance 126 mΩ
DC Resistance 226 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications3300 nH, 3300 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 13300 nH
Inductance 23300 nH
Turns Ratio1:1 
Rated Current6.8 A
Rated Current 26.8 A
Saturation Current 114.3 A
Saturation Current 214.3 A
DC Resistance 120.7 mΩ
DC Resistance 220.7 mΩ
DC Resistance 123.5 mΩ
DC Resistance 223.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications3500 nH, 3500 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 13500 nH
Inductance 23500 nH
Turns Ratio1:1 
Rated Current14 A
Rated Current 214 A
Saturation Current 127 A
Saturation Current 227 A
DC Resistance 17.5 mΩ
DC Resistance 27.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications3600 nH, 3600 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 13600 nH
Inductance 23600 nH
Turns Ratio1:1 
Rated Current2.3 A
Rated Current 22.3 A
Saturation Current4.6 A
Saturation Current 14.6 A
Saturation Current 24.6 A
DC Resistance 147 mΩ
DC Resistance 247 mΩ
DC Resistance 153 mΩ
DC Resistance 253 mΩ
Self Resonant Frequency [1]45 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications3900 nH, 3900 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 13900 nH
Inductance 23900 nH
Turns Ratio1:1 
Rated Current1.6 A
Rated Current 21.6 A
Saturation Current2.55 A
Saturation Current 12.55 A
Saturation Current 22.55 A
DC Resistance 182 mΩ
DC Resistance 282 mΩ
DC Resistance 194 mΩ
DC Resistance 294 mΩ
Self Resonant Frequency [1]60 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications4400 nH, 4400 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 14400 nH
Inductance 24400 nH
Turns Ratio1:1 
Rated Current12 A
Rated Current 212 A
Saturation Current 124 A
Saturation Current 224 A
DC Resistance 19.6 mΩ
DC Resistance 29.6 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications4700 nH, 4700 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 14700 nH
Inductance 24700 nH
Turns Ratio1:1 
Rated Current1.85 A
Rated Current 21.85 A
Saturation Current4.2 A
Saturation Current 14.2 A
Saturation Current 24.2 A
DC Resistance 154.5 mΩ
DC Resistance 254.5 mΩ
DC Resistance 164 mΩ
DC Resistance 264 mΩ
Self Resonant Frequency [1]30 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 14700 nH
Inductance 24700 nH
Turns Ratio1:1 
Rated Current1.3 A
Rated Current 21.3 A
Saturation Current3 A
DC Resistance 165 mΩ
DC Resistance 265 mΩ
DC Resistance 175 mΩ
DC Resistance 275 mΩ
Self Resonant Frequency [1]46 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 14700 nH
Inductance 24700 nH
Turns Ratio1:1 
Rated Current2.55 A
Rated Current 22.55 A
Saturation Current4 A
DC Resistance 152 mΩ
DC Resistance 252 mΩ
DC Resistance 164 mΩ
DC Resistance 264 mΩ
Self Resonant Frequency [1]42 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications4700 nH, 4700 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 14700 nH
Inductance 24700 nH
Turns Ratio1:1 
Rated Current4.22 A
Rated Current 24.22 A
Saturation Current8 A
DC Resistance 123 mΩ
DC Resistance 223 mΩ
DC Resistance 128 mΩ
DC Resistance 228 mΩ
Self Resonant Frequency [1]39 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications4700 nH, 4700 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 14700 nH
Inductance 24700 nH
Turns Ratio1:1 
Rated Current3 A
Rated Current 23 A
Saturation Current8 A
DC Resistance 123 mΩ
DC Resistance 223 mΩ
DC Resistance 128 mΩ
DC Resistance 228 mΩ
Self Resonant Frequency [1]20 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications4700 nH, 4700 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 14700 nH
Inductance 24700 nH
Turns Ratio1:1 
Rated Current4.87 A
Rated Current 24.87 A
Saturation Current10 A
DC Resistance 119 mΩ
DC Resistance 219 mΩ
DC Resistance 124 mΩ
DC Resistance 224 mΩ
Self Resonant Frequency [1]32 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications4700 nH, 4700 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 14700 nH
Inductance 24700 nH
Turns Ratio1:1 
Rated Current3.6 A
Rated Current 23.6 A
Saturation Current10 A
DC Resistance 125 mΩ
DC Resistance 225 mΩ
DC Resistance 130 mΩ
DC Resistance 230 mΩ
Self Resonant Frequency [1]34 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications4700 nH, 4700 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 14700 nH
Inductance 24700 nH
Turns Ratio1:1 
Rated Current3.6 A
Rated Current 23.6 A
Saturation Current13 A
DC Resistance 119 mΩ
DC Resistance 219 mΩ
DC Resistance 123 mΩ
DC Resistance 223 mΩ
Self Resonant Frequency [1]30 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications4700 nH, 4700 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 14700 nH
Inductance 24700 nH
Rated Current7.2 A
Rated Current 27.2 A
Saturation Current11 A
DC Resistance 110.3 mΩ
DC Resistance 210.3 mΩ
DC Resistance 114 mΩ
DC Resistance 214 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications4700 nH, 4700 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 14700 nH
Inductance 24700 nH
Turns Ratio1:1 
Rated Current3.1 A
Rated Current 23.1 A
Saturation Current2.1 A
Saturation Current 12.1 A
DC Resistance 144 mΩ
DC Resistance 244 mΩ
DC Resistance 162 mΩ
DC Resistance 262 mΩ
Self Resonant Frequency [1]46 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications4700 nH, 4700 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 14700 nH
Inductance 24700 nH
Turns Ratio1:1 
Rated Current5.9 A
Rated Current 25.9 A
Saturation Current 124.2 A
Saturation Current 224.2 A
DC Resistance 136 mΩ
DC Resistance 236 mΩ
DC Resistance 140 mΩ
DC Resistance 240 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 14700 nH
Inductance 24700 nH
Turns Ratio1:1 
Rated Current2.45 A
Rated Current 22.45 A
Saturation Current 14.7 A
Saturation Current 24.7 A
DC Resistance 185 mΩ
DC Resistance 285 mΩ
DC Resistance 1110 mΩ
DC Resistance 2110 mΩ
Self Resonant Frequency [1]43 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications4700 nH, 4700 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 14700 nH
Inductance 24700 nH
Turns Ratio1:1 
Rated Current6.2 A
Rated Current 26.2 A
Saturation Current 113.8 A
Saturation Current 213.8 A
DC Resistance 124.4 mΩ
DC Resistance 224.4 mΩ
DC Resistance 129 mΩ
DC Resistance 229 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications5600 nH, 5600 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 15600 nH
Inductance 25600 nH
Turns Ratio1:1 
Rated Current1.45 A
Rated Current 21.45 A
Saturation Current2.2 A
Saturation Current 12.2 A
Saturation Current 22.2 A
DC Resistance 1114 mΩ
DC Resistance 2114 mΩ
DC Resistance 1131 mΩ
DC Resistance 2131 mΩ
Self Resonant Frequency [1]50 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 15600 nH
Inductance 25600 nH
Turns Ratio1:1 
Rated Current1.5 A
Rated Current 21.5 A
Saturation Current3 A
DC Resistance 195 mΩ
DC Resistance 295 mΩ
DC Resistance 1120 mΩ
DC Resistance 2120 mΩ
Self Resonant Frequency [1]26 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 15600 nH
Inductance 25600 nH
Turns Ratio1:1 
Rated Current1.9 A
Rated Current 21.9 A
Saturation Current3.5 A
DC Resistance 180 mΩ
DC Resistance 280 mΩ
DC Resistance 195 mΩ
DC Resistance 295 mΩ
Self Resonant Frequency [1]23 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 15600 nH
Inductance 25600 nH
Turns Ratio1:1 
Rated Current1.4 A
Rated Current 21.4 A
Saturation Current 12 A
Saturation Current 22 A
DC Resistance 1190 mΩ
DC Resistance 2190 mΩ
DC Resistance 1234 mΩ
DC Resistance 2234 mΩ
Self Resonant Frequency [1]58 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications6800 nH, 6800 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 16800 nH
Inductance 26800 nH
Turns Ratio1:1 
Rated Current1.25 A
Rated Current 21.25 A
Saturation Current2 A
Saturation Current 12 A
Saturation Current 22 A
DC Resistance 1128 mΩ
DC Resistance 2128 mΩ
DC Resistance 1146 mΩ
DC Resistance 2146 mΩ
Self Resonant Frequency [1]46 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications6800 nH, 6800 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 16800 nH
Inductance 26800 nH
Turns Ratio1:1 
Rated Current1.45 A
Rated Current 21.45 A
Saturation Current3.2 A
Saturation Current 13.2 A
Saturation Current 23.2 A
DC Resistance 188 mΩ
DC Resistance 288 mΩ
DC Resistance 1100 mΩ
DC Resistance 2100 mΩ
Self Resonant Frequency [1]25 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 16800 nH
Inductance 26800 nH
Turns Ratio1:1 
Rated Current1.4 A
Rated Current 21.4 A
Saturation Current2.8 A
DC Resistance 1110 mΩ
DC Resistance 2110 mΩ
DC Resistance 1135 mΩ
DC Resistance 2135 mΩ
Self Resonant Frequency [1]25 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 16800 nH
Inductance 26800 nH
Turns Ratio1:1 
Rated Current1.8 A
Rated Current 21.8 A
Saturation Current3.2 A
DC Resistance 185 mΩ
DC Resistance 285 mΩ
DC Resistance 1102 mΩ
DC Resistance 2102 mΩ
Self Resonant Frequency [1]20 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications6800 nH, 6800 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 16800 nH
Inductance 26800 nH
Turns Ratio1:1 
Rated Current3.9 A
Rated Current 23.9 A
Saturation Current6.8 A
DC Resistance 127 mΩ
DC Resistance 227 mΩ
DC Resistance 132 mΩ
DC Resistance 232 mΩ
Self Resonant Frequency [1]33 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications6800 nH, 6800 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 16800 nH
Inductance 26800 nH
Turns Ratio1:1 
Rated Current2.8 A
Rated Current 22.8 A
Saturation Current6.5 A
DC Resistance 135 mΩ
DC Resistance 235 mΩ
DC Resistance 140 mΩ
DC Resistance 240 mΩ
Self Resonant Frequency [1]20 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications6800 nH, 6800 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 16800 nH
Inductance 26800 nH
Turns Ratio1:1 
Rated Current3.2 A
Rated Current 23.2 A
Saturation Current8 A
DC Resistance 127 mΩ
DC Resistance 227 mΩ
DC Resistance 135 mΩ
DC Resistance 235 mΩ
Self Resonant Frequency [1]18 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications6800 nH, 6800 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 16800 nH
Inductance 26800 nH
Turns Ratio1:1 
Rated Current3.3 A
Rated Current 23.3 A
Saturation Current11.5 A
DC Resistance 126 mΩ
DC Resistance 226 mΩ
DC Resistance 131 mΩ
DC Resistance 231 mΩ
Self Resonant Frequency [1]23 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications6800 nH, 6800 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 16800 nH
Inductance 26800 nH
Turns Ratio1:1 
Rated Current2.3 A
Rated Current 22.3 A
Saturation Current1.8 A
Saturation Current 11.8 A
DC Resistance 160 mΩ
DC Resistance 260 mΩ
DC Resistance 185 mΩ
DC Resistance 285 mΩ
Self Resonant Frequency [1]42 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications6800 nH, 6800 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 16800 nH
Inductance 26800 nH
Turns Ratio1:1 
Rated Current14 A
Rated Current 214 A
Saturation Current 116 A
Saturation Current 216 A
DC Resistance 111.3 mΩ
DC Resistance 211.3 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications6800 nH, 6800 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 16800 nH
Inductance 26800 nH
Turns Ratio1:1 
Rated Current13.5 A
Rated Current 213.5 A
Saturation Current 126 A
Saturation Current 226 A
DC Resistance 16.1 mΩ
DC Resistance 26.1 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications6800 nH, 6800 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 16800 nH
Inductance 26800 nH
Turns Ratio1:1 
Rated Current5 A
Rated Current 25 A
Saturation Current 121.2 A
Saturation Current 221.2 A
DC Resistance 146 mΩ
DC Resistance 246 mΩ
DC Resistance 151.5 mΩ
DC Resistance 251.5 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications6800 nH, 6800 nH, 1:1
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 16800 nH
Inductance 26800 nH
Turns Ratio1:1 
Rated Current5 A
Rated Current 25 A
Saturation Current 112 A
Saturation Current 212 A
DC Resistance 138 mΩ
DC Resistance 238 mΩ
DC Resistance 144 mΩ
DC Resistance 244 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications7000 nH, 70000000 nH, 1 : 100
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 17000 nH
Inductance 270000000 nH
Turns Ratio1 : 100 
Rated Current1.9 A
Rated Current1.9 A
Saturation Current1.3 A
Saturation Current 11.3 A
DC Resistance 185 mΩ
DC Resistance 2205000 mΩ
DC Resistance 195 mΩ
DC Resistance 2240000 mΩ
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 18200 nH
Inductance 28200 nH
Turns Ratio1:1 
Rated Current1.3 A
Rated Current 21.3 A
Saturation Current2.7 A
DC Resistance 1115 mΩ
DC Resistance 2115 mΩ
DC Resistance 1140 mΩ
DC Resistance 2140 mΩ
Self Resonant Frequency [1]22 MHz
Design Kit
WE-HCMD High Current Inductor for TLVR Applications
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance 18200 nH
Inductance 28200 nH
Turns Ratio1:1 
Rated Current1.7 A
Rated Current 21.7 A
Saturation Current2.9 A
DC Resistance 191 mΩ
DC Resistance 291 mΩ
DC Resistance 1110 mΩ
DC Resistance 2110 mΩ
Self Resonant Frequency [1]17 MHz
Design Kit