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Texas Instruments AMC1306M05DWVR | Demoboard TIDA-01606 Power Card

10kW 3-Phase 3-Level Grid Tie Inverter Reference Design for Solar String Inverter

Overview

TopologyOther Topology
IC revisionE4

Description

This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC grid-tie inverter stage.Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1000V and lower switching losses with a peak efficiency of 99 percent. This design is configurable to work as a two-level or three-level inverter.The system is controlled by a single C2000 microcontroller (MCU), TMS320F28379D, which generates PWM waveforms for all power electronic switching devices under all operating modes.

Features

  • Rated Nominal and Max Input Voltage at 800-V and 1000-V DC
  • Max 10-kW/10-kVA Output Power at 400-V AC 50- or 60-Hz Grid-Tie Connection
  • Operating Power Factor Range From 0.7 Lag to 0.7 Lead
  • High-Voltage (1200-V) SiC MOSFET-Based FullBridge Inverter for Peak Efficiency of 98.5%
  • Compact Output Filter by Switching Inverter at 50 kHz
  • <2% Output Current THD at Full Load
  • Isolated Driver ISO5852S With Reinforced Isolation for Driving High-Voltage SiC MOSFET and UCC5320S for Driving Middle Si IGBT
  • Isolated Current Sensing Using AMC1301 for Load Current Monitoring
  • TMS320F28379D Control Card for Digital Control

Typical applications

  • Uninterruptible Power Supplies
  • Industrial Motor Drives
  • Photovoltaic Inverters

Products

Order Code Data­sheet Downloads Product seriesCVR
(V (DC))
dV/dt
(V/µs)
DF @ 1 kHz
(%)
RISOOperating TemperaturePitch
(mm)
L
(mm)
Technical ReferenceL1
(µH)
ISAT1
(A)
RDC 1
(mΩ)
IR 1
(A)
MountW
(mm)
H
(mm)
TiTl
(mm)
PinsZ @ 100 MHz
(Ω)
Zmax
(Ω)
Test Condition ZmaxIR
(mA)
RDC typ.
(mΩ)
Z @ 1 GHz
(Ω)
TypeRowsGenderPackaging Samples
890303325008CSSPEC
7 files WCAP-FTBP Film Capacitors150 nF 630 200 0.130000 MΩ -40 °C up to +105 °C 15 18 MPPP015154J630DCPP45004 7 13
74279228260SPEC
9 files WE-MPSB EMI Multilayer Power Suppression Bead 1.6 SMT 0.8 0.8 26 39 515 MHz 6500 5 33 High Current
61300211121SPEC
6 files WR-PHD 2.54 mm THT Pin Header1000 MΩ 2.54 5.08 THT 2 3000 Straight Single Pin Header Bag
74650073RSPEC
6 files WP-THRBU REDCUBE THR with internal through-hole thread THR 7 3 M3 2.5 4 50000 Tape and Reel
750343811SPEC
MID-FLT Flat Wire Power Inductors 42 9.75 15 6 15 THT 27 42 Tray
750343810SPEC
MID-FLT Flat Wire Power Inductors 67.5 340 24 50 15 THT 67.5 39.88 Tray
Samples
Order Code Data­sheet Downloads Product seriesCVR
(V (DC))
dV/dt
(V/µs)
DF @ 1 kHz
(%)
RISOOperating TemperaturePitch
(mm)
L
(mm)
Technical ReferenceL1
(µH)
ISAT1
(A)
RDC 1
(mΩ)
IR 1
(A)
MountW
(mm)
H
(mm)
TiTl
(mm)
PinsZ @ 100 MHz
(Ω)
Zmax
(Ω)
Test Condition ZmaxIR
(mA)
RDC typ.
(mΩ)
Z @ 1 GHz
(Ω)
TypeRowsGenderPackaging Samples