IC manufacturers Texas Instruments

IC manufacturers (103)

Texas Instruments AMC1306M05DWVR | Demoboard TIDA-01606 Power Card

10kW 3-Phase 3-Level Grid Tie Inverter Reference Design for Solar String Inverter

Overview

TopologyOther Topology
IC revisionE4

Description

This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC grid-tie inverter stage.Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1000V and lower switching losses with a peak efficiency of 99 percent. This design is configurable to work as a two-level or three-level inverter.The system is controlled by a single C2000 microcontroller (MCU), TMS320F28379D, which generates PWM waveforms for all power electronic switching devices under all operating modes.

Features

  • Rated Nominal and Max Input Voltage at 800-V and 1000-V DC
  • Max 10-kW/10-kVA Output Power at 400-V AC 50- or 60-Hz Grid-Tie Connection
  • Operating Power Factor Range From 0.7 Lag to 0.7 Lead
  • High-Voltage (1200-V) SiC MOSFET-Based FullBridge Inverter for Peak Efficiency of 98.5%
  • Compact Output Filter by Switching Inverter at 50 kHz
  • <2% Output Current THD at Full Load
  • Isolated Driver ISO5852S With Reinforced Isolation for Driving High-Voltage SiC MOSFET and UCC5320S for Driving Middle Si IGBT
  • Isolated Current Sensing Using AMC1301 for Load Current Monitoring
  • TMS320F28379D Control Card for Digital Control

Typical applications

  • Industrial Motor Drives
  • Uninterruptible Power Supplies
  • Photovoltaic Inverters

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
C
VR(V (DC))
dV/dt(V/µs)
DF @ 1 kHz(%)
RISO
Pitch(mm)
L(mm)
Packaging
Mount
G(mm)
Working Voltage(V (AC))
Operating Temperature
W(mm)
H(mm)
Ti
Tl(mm)
Pins
Z @ 100 MHz(Ω)
Zmax(Ω)
Test Condition Zmax
IR(mA)
Z @ 1 GHz(Ω)
Type
Samples
WCAP-FTBP Film Capacitors, 150 nF, 630 V (DC)
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance150 nF
Rated Voltage630 V (DC)
Rate of Voltage Rise200 V/µs
Dissipation Factor0.1 %
Insulation Resistance30 GΩ
Pitch15 mm
Length18 mm
PackagingCarton 
Pin length4 mm
Operating Temperature -40 °C up to +105 °C
Width7 mm
Height13 mm
WE-MPSB EMI Multilayer Power Suppression Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length1.6 mm
MountSMT 
Operating Temperature -55 °C up to +125 °C
Width0.8 mm
Height0.8 mm
Impedance @ 100 MHz26 Ω
Maximum Impedance39 Ω
Maximum Impedance515 MHz 
Rated Current6500 mA
Impedance @ 1 GHz33 Ω
TypeHigh Current 
WR-PHD Pin Header - Single, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Insulation Resistance1000 MΩ
Pitch2.54 mm
Length5.08 mm
PackagingBag 
MountTHT 
Working Voltage250 V (AC)
Operating Temperature -40 °C up to +105 °C
Pins
Rated Current3000 mA
TypeStraight 
WP-THRBU REDCUBE THR with internal through-hole thread, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
PackagingTape and Reel 
MountTHR 
Operating Temperature -55 °C up to +150 °C
Width7 mm
Height3 mm
Inner ThreadM3 
Thread Length2.5 mm
Pins
Rated Current50000 mA
750343811
Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Product series Inductor
Length42 mm
PackagingTray 
MountTHT 
Pin length4 mm
Operating Temperature -40 °C up to +125 °C
Width27 mm
Height42 mm
750343810
Inductor, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Product series Inductor
Length67.5 mm
PackagingTray 
MountTHT 
Pin length4 mm
Operating Temperature -40 °C up to +125 °C
Width67.5 mm
Height39.88 mm