IC-Hersteller Transphorm
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Details
| Topologie | Leistungsfaktor-Korrektur |
| Eingangsspannung | 85-265 V |
| Ausgang 1 | 387 V |
| IC-Revision | 2 |
Beschreibung
The Evaluation Board for a bridgeless totem-pole Power-Factor-Correction (PFC) circuit,using Transphorm GaN power HEMTs, is described in this application note. In this board, byusing a diode-free GaN power HEMT bridge with low reverse-recovery charge, very-highefficiencysingle-phase AC-DC conversion is realized. In this circuit, the performance andefficiency improvement, achieved by use of the GaN HEMTs in the fast-switching leg of thecircuit, is further enhanced by the use of low resistance MOSFETs in the slow-switching leg
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Simulation | Downloads | Produktserie | Anwendung | C | Sicherheitsklasse | dV/dt (V/µs) | DF @ 1 kHz (%) | RISO | Betriebstemperatur | Raster (mm) | Verpackung | IR (A) | L (mH) | RDC max. (mΩ) | VR (V (AC)) | VT (V (AC)) | Material | L (mm) | W (mm) | H (mm) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 890324026030 | SPEC | 8 Dateien | WCAP-FTX2 Folienkondensatoren | Across the mains | 1.5 µF | X2 | 140 | 0.1 | 6.67 GΩ | -40 °C bis zu +105 °C | 22.5 | Lose | – | – | – | 275 | – | – | 26 | 10 | 21 | Boxed THT | ||
 | 7448031501 | SPEC | 9 Dateien | WE-CMBNC Stromkompensierte Netzdrossel Nanokristallin | – | – | – | – | – | – | – | – | – | 15 | 1 | 3.2 | 300 | 2100 | Nanokristallin | 24 | 17 | 25 | THT |
| Artikel Nr. | Datenblatt | Simulation | |
|---|---|---|---|
| 890324026030 | SPEC | |
| 7448031501 | SPEC |
| Muster |
|---|
| Artikel Nr. | Datenblatt | Simulation | Downloads | Produktserie | Anwendung | C | Sicherheitsklasse | dV/dt (V/µs) | DF @ 1 kHz (%) | RISO | Betriebstemperatur | Raster (mm) | Verpackung | IR (A) | L (mH) | RDC max. (mΩ) | VR (V (AC)) | VT (V (AC)) | Material | L (mm) | W (mm) | H (mm) | Montageart | Muster |
|---|