IC manufacturers Texas Instruments

IC manufacturers (103)

Texas Instruments TPS2373 | Demoboard TPS2373-3EVM-024

IEEE 802.3bt PoE high-power PD interface with advanced startup

Overview

TopologyOther Topology
Input voltage0-57 V
Output 112.14 V / 4.25 A
IC revisionA

Description

The TPS2373 contains all of the features needed to implement an IEEE802.3at or IEEE802.3bt (draft) (Type 1-4) powered device (PD). The low internal switch resistance allows the TPS2373-4 and TPS2373-3 to support high power applications up to 90 W and 60 W respectively. Assuming 100-meter CAT5 cable, this translates into 71.3 W and 51 W at PD input.The TPS2373 operates with enhanced features.The Advanced Startup function for DC-DC results in a simple, flexible, and minimal system cost solution, while ensuring that IEEE802.3bt (draft) startup requirements are met. It helps to reduce the size of the low voltage bias capacitor considerably. It also allows long DC-DC converter soft-start period and enables the use of a low-voltage PWM controller.The Automatic MPS function enables applications requiring very low power standby modes. The TPS2373 automatically generates the necessary pulsed current to maintain the PSE power. An external resistor is used to enable this functionality and to program the MPS pulsed current amplitude.

Features

  • IEEE 802.3bt (Draft) PD Solution for Type 3 or Type 4 PoE
  • Supports Power Levels for Type-4 ( TPS2373-4) 90-W and Type-3 ( TPS2373-3) 60-W Operation
  • Robust 100 V Hotswap MOSFET
  • TPS2373-4 (typ.): 0.1-Ω, 2.2-A Current Limit
  • TPS2373-3 (typ.): 0.3-Ω, 1.85-A Current Limit
  • Allocated Power Indicator Outputs
  • Advanced Startup for DC-DC
  • Simplifies Downstream DC-DC Design
  • Compliant to PSE Inrush
  • Automatic Maintain Power Signature (MPS)
  • Auto-adjust MPS for Type 1-2 or 3-4 PSE
  • Supports Ultra-Low Power Standby Modes
  • Primary Adapter Priority Input
  • Supports PoE++ PSE
  • -40°C to 125°C Junction Temperature Range
  • 20-lead VQFN Package

Typical applications

  • Security Cameras
  • IEEE 802.3bt (Draft) Compliant Devices, 4PPOE, Pass-through System, Systems using Redundant Power Feeds
  • Multiband access points, Pico-base Stations, Video and VoIP Telephones

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
λDom typ.(nm)
Emitting Color
λPeak typ.(nm)
IV typ.(mcd)
VF typ.(V)
Chip Technology
50% typ.(°)
C
Tol. C
Size
Q(%)
RISO
Ceramic Type
L(mm)
W(mm)
H(mm)
Fl(mm)
Packaging
Z @ 100 MHz(Ω)
Zmax(Ω)
Test Condition Zmax
IR 2(mA)
RDC max.(Ω)
Type
Winding Style
Number of windings
L1(µH)
IR(mA)
RDC max.(Ω)
VR(V)
Data rate
Ports
PoE
Improved CMRR
Operating Temperature
VT(V (AC))
Mount
L(µH)
LSmin.(nH)
Samples
WL-SMCW SMT Mono-color Chip LED Waterclear, 590 nm, Yellow
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Dominant Wavelength [typ.]590 nm
Emitting ColorYellow 
Peak Wavelength [typ.]595 nm
Luminous Intensity [typ.]120 mcd
Forward Voltage [typ.]2 V
Chip TechnologyAlInGaP 
Viewing Angle Phi 0° [typ.]140 °
Size0603 
Length1.6 mm
Width0.8 mm
Height0.7 mm
PackagingTape and Reel 
Operating Temperature -40 °C up to +85 °C
MountSMT 
WE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Size0603 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.3 mm
Impedance @ 100 MHz300 Ω
Maximum Impedance450 Ω
Maximum Impedance250 MHz 
Rated Current 22000 mA
DC Resistance0.15 Ω
TypeHigh Current 
Number of windings
Rated Current2000 mA
DC Resistance [1]0.15 Ω
Operating Temperature -55 °C up to +125 °C
MountSMT 
WE-SL5 SMT Common Mode Line Filter, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length10 mm
Width8.7 mm
Height6.5 mm
Impedance @ 100 MHz800 Ω
Maximum Impedance1200 Ω
Maximum Impedance20 MHz 
DC Resistance0.035 Ω
Winding Stylesectional 
Number of windings
Inductance [1]250 µH
Rated Current2000 mA
DC Resistance [1]0.035 Ω
Rated Voltage80 V
Operating Temperature -40 °C up to +125 °C
Insulation Test Voltage1000 V (AC)
MountSMT 
Inductance250 µH
Leakage Inductance [min.]1500 nH
WCAP-CSGP MLCCs 50 V(DC), –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance330 pF
Capacitance±5% 
Size0603 
Q-Factor1000 %
Insulation Resistance10 GΩ
Ceramic TypeNP0 Class I 
Length1.6 mm
Width0.8 mm
Height0.8 mm
Pad Dimension0.4 mm
Packaging7" Tape & Reel 
Rated Voltage50 V
Operating Temperature -55 °C up to +125 °C
WE-LAN LAN Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Length17.55 mm
Width16 mm
Height98.8 mm
Pad Dimension13.97 mm
Type4PPoE (to 900 mA) 
Inductance [1]350 µH
Data rate10/100/1000BASE-T 
Ports
PoE4PPoE (up to 1000 mA) 
Improved Common Mode RejectionNo 
Operating Temperature -40 °C up to +105 °C
Insulation Test Voltage1500 V (AC)
MountSMT 
Inductance350 µH
750317065
–, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Product series
SizeEFD25 
Length27.03 mm
Width32.45 mm
Height13.97 mm
Insulation Test Voltage325 V (AC)
MountSMT 
Inductance30 µH