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Texas Instruments SN6505 | Demoboard LMG3410EVM-018
LMG3410R050 600-V 50-mΩ GaN half-bridge daughter card
Overview
| Topology | Half-Bridge Converter symmetrical isolated |
| Input voltage | 600 V |
| IC revision | A |
Description
LMG3410EVM-018 configures two LMG3410R050 600-V GaN FETs with Integrated driver and protection, in a half bridge. This EVM comes with all the necessary auxiliary peripheral circuitry, and is designed to work in conjunction with larger systems.
Features
Input voltage operates up to 600 VSimple open loop design to evaluate performance of LMG3410R050Single PWM input on board for PWM signal with 50 ns dead timeConvenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
Typical applications
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | L(µH) | IR(A) | ISAT(A) | RDC(mΩ) | fres(MHz) | VIN | VOut1(V (DC)) | IOut1(A) | Type of Insulation | fswitch(kHz) | ∫Udt(Vµs) | NPRI : NSEC | VT(V (AC)) | L(mm) | W(mm) | H(mm) | Mount | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-LQS SMT Power Inductor, 10 µH, 0.5 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-LQS SMT Power Inductor | Inductance10 µH | Rated Current0.5 A | Saturation Current0.6 A | DC Resistance860 mΩ | Self Resonant Frequency39 MHz | – | – | – | – | – | – | – | – | Length2 mm | Width1.6 mm | Height1 mm | MountSMT | ||||
 | WE-PPTI Push-Pull Transformers, 475 µH, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-PPTI Push-Pull Transformers | Inductance475 µH | – | – | – | – | Input Voltage 5 V (DC) | Output Voltage 15 V (DC) | Output Current 10.6 A | Type of InsulationFunctional | Switching Frequency 300 - 620 | Voltage-µSecond11 Vµs | Turns Ratio1:1.3 | Insulation Test Voltage2500 V (AC) | Length6.73 mm | Width10.2 mm | Height4.19 mm | MountSMT |