Topologie | Gegentaktwandler (Halbbrücken) |
Eingangsspannung | 600 V |
IC-Revision | A |
LMG3410EVM-018 configures two LMG3410R050 600-V GaN FETs with Integrated driver and protection, in a half bridge. This EVM comes with all the necessary auxiliary peripheral circuitry, and is designed to work in conjunction with larger systems.
Input voltage operates up to 600 VSimple open loop design to evaluate performance of LMG3410R050Single PWM input on board for PWM signal with 50 ns dead timeConvenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | IR (A) | ISAT (A) | RDC (mΩ) | fres (MHz) | Vin | VOut1 (V (DC)) | IOut1 (A) | Isolierungstyp | fswitch (kHz) | ∫Udt (Vµs) | NPRI : NSEC | VT (V (AC)) | L (mm) | W (mm) | H (mm) | Montageart | Muster | |
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![]() | 74404020100 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-LQS SMT-Speicherdrossel | 10 | 0.5 | 0.6 | 860 | 39 | – | – | – | – | – | – | – | – | 2 | 1.6 | 1 | SMT | ||
![]() | 760390014 | SPEC | – | 7 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-PPTI Push-Pull Transformers | 475 | – | – | – | – | 5 V (DC) | 5 | 0.6 | Funktional | 300 - 620 | 11 | 1:1.3 | 2500 | 6.73 | 10.2 | 4.19 | SMT |
Artikel Nr. | Datenblatt | Simulation | |
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![]() | 74404020100 | SPEC | |
![]() | 760390014 | SPEC | – |
Muster |
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Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | IR (A) | ISAT (A) | RDC (mΩ) | fres (MHz) | Vin | VOut1 (V (DC)) | IOut1 (A) | Isolierungstyp | fswitch (kHz) | ∫Udt (Vµs) | NPRI : NSEC | VT (V (AC)) | L (mm) | W (mm) | H (mm) | Montageart | Muster |
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