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reference designLMG3422R050 | Demoboard LMG3425EVM-041

Texas Instruments LMG3422R050 | Demoboard LMG3425EVM-041

600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting

Overview

TopologyHalf-Bridge Converter symmetrical isolated
Input voltage650 V
IC revisionB

Description

The LMG342xR050 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG342xR050 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's lowinductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3425R050 includes ideal diode mode, which reduces thirdquadrant losses by enabling adaptive dead-time control. Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.

Features

  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600-V GaN-on-Si FET with Integrated gate driver – Integrated high precision gate bias voltage
  • 200-V/ns CMTI
  • 3.6-MHz switching frequency
  • 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
  • Operates from 7.5-V to 18-V supply
  • Robust protection
  • Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100-ns response
  • Withstands 720-V surge while hard-switching
  • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
  • Digital temperature PWM output
  • Ideal diode mode reduces third-quadrant losses in LMG3425R050

Typical applications

  • Merchant telecom rectifiers, Merchant network & server PSU
  • Uninterruptable power supplies
  • Solar inverters and industrial motor drives

More information

Parts approved by Texas Instruments

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Order Code
Data­sheet
Downloads
Status
Product series
VIN
VOut1(V)
IOut1(A)
Type of Insulation
fswitch(kHz)
∫Udt(Vµs)
NPRI : NSEC
L(µH)
VT(V (AC))
L(mm)
W(mm)
H(mm)
Mount
SamplesAvailability & Sample
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750315371
SPECWE-PPTI Push-Pull Transformers, 4.5 - 5.5 V (DC), 5 V

PCN pending

Due to a pending PCN there will be a new datasheet revision issued for this order code soon. Please find the actual as well based on valid PCN date the new revision datasheet below. If you have further questions please get in contact with our sales staff.

Availability
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Downloads8 files

Status
ActiveProduction is active. Expected lifetime: >10 years.
iProduction is active. Expected lifetime: >10 years.
Product seriesWE-PPTI Push-Pull Transformers
Input Voltage 4.5 - 5.5 V (DC)
Output Voltage 15 V
Output Current 11 A
Type of InsulationFunctional 
Switching Frequency 400 - 700
Voltage-µSecond8.6 Vµs
Turns Ratio1:1.1 
Inductance72 µH
Insulation Test Voltage2500 V (AC)
Length8.3 mm
Width12.6 mm
Height4.1 mm
MountSMT 
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