| Topologie | Gegentaktwandler (Halbbrücken) |
| Eingangsspannung | 650 V |
| IC-Revision | B |
The LMG342xR050 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG342xR050 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's lowinductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3425R050 includes ideal diode mode, which reduces thirdquadrant losses by enabling adaptive dead-time control. Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.
Artikel Nr. | Datenblatt | Downloads | Status | Produktserie | Vin | VOut1(V) | IOut1(A) | Isolierungstyp | fswitch(kHz) | ∫Udt(Vµs) | NPRI : NSEC | L(µH) | VT(V (AC)) | L(mm) | B(mm) | H(mm) | Montageart | Muster | |
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![]() | WE-PPTI Push-Pull Transformers, 4.5 - 5.5 V (DC), 5 V | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PPTI Push-Pull Transformers | Input Voltage 4.5 - 5.5 V (DC) | Ausgangsspannung 15 V | Ausgangsstrom 11 A | IsolierungstypFunktional | Switching Frequency 400 - 700 | Spannung-µSekunde8.6 Vµs | Übersetzungsverhältnis1:1.1 | Induktivität72 µH | Prüfspannung2500 V (AC) | Länge8.3 mm | Breite12.6 mm | Höhe4.1 mm | MontageartSMT |