IC-Hersteller Texas Instruments

IC-Hersteller (103)

Texas Instruments LMG3422R050 | Demoboard LMG3425EVM-041

600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting

Details

TopologieGegentaktwandler (Halbbrücken)
Eingangsspannung650 V
IC-RevisionB

Beschreibung

The LMG342xR050 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG342xR050 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's lowinductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3425R050 includes ideal diode mode, which reduces thirdquadrant losses by enabling adaptive dead-time control. Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.

Eigenschaften

  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600-V GaN-on-Si FET with Integrated gate driver – Integrated high precision gate bias voltage
  • 200-V/ns CMTI
  • 3.6-MHz switching frequency
  • 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
  • Operates from 7.5-V to 18-V supply
  • Robust protection
  • Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100-ns response
  • Withstands 720-V surge while hard-switching
  • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
  • Digital temperature PWM output
  • Ideal diode mode reduces third-quadrant losses in LMG3425R050

Typische Anwendungen

  • Merchant telecom rectifiers, Merchant network & server PSU
  • Uninterruptable power supplies
  • Solar inverters and industrial motor drives

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Downloads
Status
Produktserie
Vin
VOut1(V)
IOut1(A)
Isolierungstyp
fswitch(kHz)
∫Udt(Vµs)
NPRI : NSEC
L(µH)
VT(V (AC))
L(mm)
B(mm)
H(mm)
Montageart
Muster
WE-PPTI Push-Pull Transformers, 4.5 - 5.5 V (DC), 5 V
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Input Voltage 4.5 - 5.5 V (DC)
Ausgangsspannung 15 V
Ausgangsstrom 11 A
IsolierungstypFunktional 
Switching Frequency 400 - 700
Spannung-µSekunde8.6 Vµs
Übersetzungsverhältnis1:1.1 
Induktivität72 µH
Prüfspannung2500 V (AC)
Länge8.3 mm
Breite12.6 mm
Höhe4.1 mm
MontageartSMT