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Texas Instruments LMG3422 | Demoboard PMP41017
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting
Overview
| Topology | Half-Bridge Converter symmetrical isolated |
| Input voltage | 340-420 V |
| Output 1 | 12 V / 266 A |
Description
The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's lowinductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.
Features
- Qualified for JEDEC JEP180 for hard-switching topologies
- 600V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 2.2MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimization ofswitching performance and EMI mitigation
- Operates from 7.5V to 18V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- LMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
Typical applications
- Merchant network and server PSU, Merchant telecom rectifiers
- Uninterruptible power supplies
- Solar inverters and industrial motor drives
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | Tol. C | VR(V (DC)) | Size | Operating Temperature | DF(%) | RISO | Ceramic Type | L(mm) | W(mm) | H(mm) | Fl(mm) | Packaging | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | fres(MHz) | VOP(V) | Mount | Endurance(h) | IRIPPLE(mA) | ILeak(µA) | Pitch(mm) | Ø D(mm) | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 50 V(DC), 100 pF, ±10% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 50 V(DC) | Capacitance100 pF | Capacitance±10% | Rated Voltage50 V (DC) | Size0402 | Operating Temperature -55 °C up to +125 °C | Dissipation Factor2.5 % | Insulation Resistance10 GΩ | Ceramic TypeX7R Class II | Length1 mm | Width0.5 mm | Height0.5 mm | Pad Dimension0.25 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 10 V(DC), 100 nF, ±20% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 10 V(DC) | Capacitance100 nF | Capacitance±20% | Rated Voltage10 V (DC) | Size0402 | Operating Temperature -55 °C up to +85 °C | Dissipation Factor5 % | Insulation Resistance5 GΩ | Ceramic TypeX5R Class II | Length1 mm | Width0.5 mm | Height0.5 mm | Pad Dimension0.25 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | |||||
 | WCAP-ATG5 Aluminum Electrolytic Capacitors, 3300 µF, ±20% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-ATG5 Aluminum Electrolytic Capacitors | Capacitance3300 µF | Capacitance±20% | Rated Voltage16 V (DC) | – | – | Dissipation Factor15 % | – | – | Length25 mm | – | – | – | PackagingAmmopack | – | – | – | – | – | – | – | Endurance 2000 | Ripple Current1200 mA | Leakage Current528 µA | Pitch5 mm | Diameter13 mm | ||||
 | WE-MAPI SMT Power Inductor, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MAPI SMT Power Inductor | – | – | – | Size2510 | Operating Temperature -40 °C up to +125 °C | – | – | – | Length2.5 mm | Width2 mm | Height1 mm | – | – | Inductance10 µH | Performance Rated Current0.9 A | Saturation Current @ 30%1.7 A | DC Resistance733 mΩ | Self Resonant Frequency25 MHz | Operating Voltage80 V | MountSMT | – | – | – | – | – |