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Texas Instruments LMG3422 | Demoboard PMP41017
LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting
Details
| Topologie | Gegentaktwandler (Halbbrücken) |
| Eingangsspannung | 340-420 V |
| Ausgang 1 | 12 V / 266 A |
Beschreibung
The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's lowinductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.
Eigenschaften
- Qualified for JEDEC JEP180 for hard-switching topologies
- 600V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 2.2MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimization ofswitching performance and EMI mitigation
- Operates from 7.5V to 18V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- LMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
Typische Anwendungen
- Merchant network and server PSU, Merchant telecom rectifiers
- Uninterruptible power supplies
- Solar inverters and industrial motor drives
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR(V (DC)) | Bauform | Betriebstemperatur | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | H(mm) | Fl(mm) | Verpackung | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | fres(MHz) | VOP(V) | Montageart | Endurance(h) | IRIPPLE(mA) | ILeak(µA) | Raster(mm) | Ø D(mm) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 50 V(DC), 100 pF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 50 V(DC) | Kapazität100 pF | Kapazität±10% | Nennspannung50 V (DC) | Bauform0402 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor2.5 % | Isolationswiderstand10 GΩ | KeramiktypX7R Klasse II | Länge1 mm | Breite0.5 mm | Höhe0.5 mm | Pad Dimension0.25 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 10 V(DC), 100 nF, ±20% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 10 V(DC) | Kapazität100 nF | Kapazität±20% | Nennspannung10 V (DC) | Bauform0402 | Betriebstemperatur -55 °C up to +85 °C | Verlustfaktor5 % | Isolationswiderstand5 GΩ | KeramiktypX5R Klasse II | Länge1 mm | Breite0.5 mm | Höhe0.5 mm | Pad Dimension0.25 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | |||||
 | WCAP-ATG5 Aluminium-Elektrolytkondensatoren, 3300 µF, ±20% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-ATG5 Aluminium-Elektrolytkondensatoren | Kapazität3300 µF | Kapazität±20% | Nennspannung16 V (DC) | – | – | Verlustfaktor15 % | – | – | Länge25 mm | – | – | – | VerpackungAmmopack | – | – | – | – | – | – | – | Endurance 2000 | Rippelstrom1200 mA | Leckstrom528 µA | Raster5 mm | Durchmesser13 mm | ||||
 | WE-MAPI SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | – | – | – | Bauform2510 | Betriebstemperatur -40 °C up to +125 °C | – | – | – | Länge2.5 mm | Breite2 mm | Höhe1 mm | – | – | Induktivität10 µH | Performance Nennstrom0.9 A | Sättigungsstrom @ 30%1.7 A | Gleichstromwiderstand733 mΩ | Eigenresonanzfrequenz25 MHz | Betriebsspannung80 V | MontageartSMT | – | – | – | – | – |