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Overview
| Topology | Other Topology |
| IC revision | A |
Description
The LM5170 controller provides the essential high voltage and precision elements of a dual-channel bidirectional converter. It regulates the average current flowing between the high voltage and low voltage ports in the direction designated by the DIR input signal. The current regulation level is programmed through analog or digital PWM inputs. Dual-channel differential current sense amplifiers and dedicated channel current monitors achieve typical current accuracy of 1%. Robust 5-A half-bridge gate drivers are capable of driving parallel MOSFET switches delivering 500 W or more per channel. The diode emulation mode of the synchronous rectifiers prevents negative currents but also enables discontinuous mode operation for improved efficiency with light loads. Versatile protection features include cycle-by-cycle current limiting, overvoltage protection at both HV and LV ports, MOSFET failure detection, and overtemperature protection.
Features
- Functional Safety-Capable-Documentation available to aid functional safety system design
- Suited for high power industrial dual battery system-100-V HV-port and 65-V LV-port max ratings-1% Accurate bidirectional current regulation-1% Accurate channel current monitoring-5-A Peak half-bridge gate drivers-Support multi-phase operation with stackability-Diode emulation prevents negative current
- Programmability and flexibility-Programmable or adaptive dead-time control-Programmable oscillator frequency with optional synchronization to external clock-Dual channel enable control inputs-Analog and PWM current controls-Programmable peak current limit-Programmable soft-start timer-Phase adding or dropping using EN2
- Integrated protection features-HV and LV port over-voltage protection-MOSFET failure detect at start-up and circuit breaker control-Thermal shutdown
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | λDom typ.(nm) | Emitting Color | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chip Technology | 2θ50% typ.(°) | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | fres(MHz) | Wire Type | Z @ 100 MHz(Ω) | Zmax(Ω) | Test Condition Zmax | IR 2(mA) | RDC max.(Ω) | Type | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WL-SMCW SMT Mono-color Chip LED Waterclear, 570 nm, Bright Green | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWL-SMCW SMT Mono-color Chip LED Waterclear | Dominant Wavelength [typ.]570 nm | Emitting ColorBright Green | Peak Wavelength [typ.]572 nm | Luminous Intensity [typ.]40 mcd | Forward Voltage [typ.]2 V | Chip TechnologyAlInGaP | Viewing Angle Phi 0° [typ.]140 ° | – | – | – | – | – | – | – | – | – | – | – | – | ||||
| WL-SMCW SMT Mono-color Chip LED Waterclear, 590 nm, Yellow | Downloads27 files RAY files
| Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWL-SMCW SMT Mono-color Chip LED Waterclear | Dominant Wavelength [typ.]590 nm | Emitting ColorYellow | Peak Wavelength [typ.]595 nm | Luminous Intensity [typ.]120 mcd | Forward Voltage [typ.]2 V | Chip TechnologyAlInGaP | Viewing Angle Phi 0° [typ.]140 ° | – | – | – | – | – | – | – | – | – | – | – | – | |||
 | WE-CBF SMT EMI Suppression Ferrite Bead, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-CBF SMT EMI Suppression Ferrite Bead | – | – | – | – | – | – | – | – | – | – | – | – | – | Impedance @ 100 MHz600 Ω | Maximum Impedance800 Ω | Maximum Impedance200 MHz | Rated Current 21000 mA | DC Resistance0.2 Ω | TypeHigh Current | ||||
 | WE-HCF SMT High Current Inductor, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCF SMT High Current Inductor | – | – | – | – | – | – | – | Inductance4.7 µH | Performance Rated Current44 A | Saturation Current @ 10%44 A | Saturation Current @ 30%48 A | Self Resonant Frequency21.56 MHz | Wire TypeFlat | – | – | – | – | DC Resistance0.00144 Ω | – |