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Texas Instruments DRV8350S | Demoboard DRV8350S-EVM
DRV8350S three-phase smart gate driver evaluation module
Overview
| Topology | Half-Bridge Converter symmetrical isolated |
| Input voltage | 12-95 V |
| Switching frequency | 200 kHz |
| Output 1 | 3.3 V / 15 A |
| IC revision | A |
Description
The DRV8350S-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8350S gate driver and CSD19532Q5B NexFET™ power blocks. The module has individual DC bus and phase voltage sense as well as an external, individual low-side current shunt amplifier, making this evaluation module ideal for sensorless BLDC algorithms. The module supplies MCU 3.3V and 5V power blocks from a 12 V, 0.35A step down buck regulator. The driver can be configured in split rail and single rail power solutions. The drive stage has IDRIVE configuration, along with a fault pin and protection for short circuit, thermal, shoot-through, and under voltage conditions through configurable SPI. The EVM has an entire USB to MCU environment to program and evaluate the EVM using available trapezoidal drive firmware and GUI.
Features
- 12- to 95-V operation
- 15 A continuous / 20 A peak H-bridge output current
- Complete evaluation module with hall sensor connection along with programmable MSP430F5529
- One individual, external low-side current shunt amplifiers
- Trapezoidal sensored and sensorless BLDC firmware available
- Hardware interface to configure IDRIVE, MODE, VDS monitoring, and GAIN
Typical applications
- Fans, Blowers, and Pumps / Drones, Robotics, and RC Toys / E-Bikes, E-Scooters, and E-Mobility / Factory Automation and Textile Machines
- 3-Phase Brushless-DC (BLDC) Motor Modules / Power and Garden Tools, Lawn Mowers
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | Tol. C | VR(V (DC)) | Size | Operating Temperature | DF(%) | RISO | Ceramic Type | L(mm) | W(mm) | H(mm) | Fl(mm) | Packaging | L(µH) | IR(mA) | ISAT(A) | RDC(mΩ) | fres(MHz) | Z @ 100 MHz(Ω) | Zmax(Ω) | Test Condition Zmax | IR 2(mA) | RDC max.(Ω) | Type | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 50 V(DC), 1 nF, ±10% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 50 V(DC) | Capacitance1 nF | Capacitance±10% | Rated Voltage50 V (DC) | Size0402 | Operating Temperature -55 °C up to +125 °C | Dissipation Factor2.5 % | Insulation Resistance10 GΩ | Ceramic TypeX7R Class II | Length1 mm | Width0.5 mm | Height0.5 mm | Pad Dimension0.25 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 16 V(DC), 1 nF, ±10% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 16 V(DC) | Capacitance1 nF | Capacitance±10% | Rated Voltage16 V (DC) | Size0603 | Operating Temperature -55 °C up to +125 °C | Dissipation Factor3.5 % | Insulation Resistance10 GΩ | Ceramic TypeX7R Class II | Length1.6 mm | Width0.8 mm | Height0.8 mm | Pad Dimension0.4 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 10 V(DC), 100 nF, ±20% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 10 V(DC) | Capacitance100 nF | Capacitance±20% | Rated Voltage10 V (DC) | Size0402 | Operating Temperature -55 °C up to +85 °C | Dissipation Factor5 % | Insulation Resistance5 GΩ | Ceramic TypeX5R Class II | Length1 mm | Width0.5 mm | Height0.5 mm | Pad Dimension0.25 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | |||||
 | WE-CBF SMT EMI Suppression Ferrite Bead, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-CBF SMT EMI Suppression Ferrite Bead | – | – | – | Size0603 | Operating Temperature -55 °C up to +125 °C | – | – | – | Length1.6 mm | Width0.8 mm | Height0.8 mm | Pad Dimension0.3 mm | – | – | Rated Current500 mA | – | – | – | Impedance @ 100 MHz100 Ω | Maximum Impedance125 Ω | Maximum Impedance450 MHz | Rated Current 21650 mA | DC Resistance0.15 Ω | TypeWide Band | ||||
 | WE-LQS SMT Power Inductor, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-LQS SMT Power Inductor | – | – | – | Size8040 | Operating Temperature -40 °C up to +125 °C | – | – | – | Length8 mm | Width8 mm | Height4.2 mm | – | – | Inductance330 µH | Rated Current660 mA | Saturation Current0.9 A | DC Resistance865 mΩ | Self Resonant Frequency3.55 MHz | – | – | – | – | – | – |