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Texas Instruments DRV8350S | Demoboard DRV8350S-EVM
DRV8350S three-phase smart gate driver evaluation module
Details
| Topologie | Gegentaktwandler (Halbbrücken) |
| Eingangsspannung | 12-95 V |
| Schaltfrequenz | 200 kHz |
| Ausgang 1 | 3.3 V / 15 A |
| IC-Revision | A |
Beschreibung
The DRV8350S-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8350S gate driver and CSD19532Q5B NexFET™ power blocks. The module has individual DC bus and phase voltage sense as well as an external, individual low-side current shunt amplifier, making this evaluation module ideal for sensorless BLDC algorithms. The module supplies MCU 3.3V and 5V power blocks from a 12 V, 0.35A step down buck regulator. The driver can be configured in split rail and single rail power solutions. The drive stage has IDRIVE configuration, along with a fault pin and protection for short circuit, thermal, shoot-through, and under voltage conditions through configurable SPI. The EVM has an entire USB to MCU environment to program and evaluate the EVM using available trapezoidal drive firmware and GUI.
Eigenschaften
- 12- to 95-V operation
- 15 A continuous / 20 A peak H-bridge output current
- Complete evaluation module with hall sensor connection along with programmable MSP430F5529
- One individual, external low-side current shunt amplifiers
- Trapezoidal sensored and sensorless BLDC firmware available
- Hardware interface to configure IDRIVE, MODE, VDS monitoring, and GAIN
Typische Anwendungen
- Fans, Blowers, and Pumps / Drones, Robotics, and RC Toys / E-Bikes, E-Scooters, and E-Mobility / Factory Automation and Textile Machines
- 3-Phase Brushless-DC (BLDC) Motor Modules / Power and Garden Tools, Lawn Mowers
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR(V (DC)) | Bauform | Betriebstemperatur | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | H(mm) | Fl(mm) | Verpackung | L(µH) | IR(mA) | ISAT(A) | RDC(mΩ) | fres(MHz) | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(Ω) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 50 V(DC), 1 nF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 50 V(DC) | Kapazität1 nF | Kapazität±10% | Nennspannung50 V (DC) | Bauform0402 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor2.5 % | Isolationswiderstand10 GΩ | KeramiktypX7R Klasse II | Länge1 mm | Breite0.5 mm | Höhe0.5 mm | Pad Dimension0.25 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 16 V(DC), 1 nF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 16 V(DC) | Kapazität1 nF | Kapazität±10% | Nennspannung16 V (DC) | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor3.5 % | Isolationswiderstand10 GΩ | KeramiktypX7R Klasse II | Länge1.6 mm | Breite0.8 mm | Höhe0.8 mm | Pad Dimension0.4 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 10 V(DC), 100 nF, ±20% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 10 V(DC) | Kapazität100 nF | Kapazität±20% | Nennspannung10 V (DC) | Bauform0402 | Betriebstemperatur -55 °C up to +85 °C | Verlustfaktor5 % | Isolationswiderstand5 GΩ | KeramiktypX5R Klasse II | Länge1 mm | Breite0.5 mm | Höhe0.5 mm | Pad Dimension0.25 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | |||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | – | – | – | Länge1.6 mm | Breite0.8 mm | Höhe0.8 mm | Pad Dimension0.3 mm | – | – | Nennstrom500 mA | – | – | – | Impedanz @ 100 MHz100 Ω | Maximale Impedanz125 Ω | Maximale Impedanz450 MHz | Nennstrom 21650 mA | Gleichstromwiderstand0.15 Ω | TypBreitband | ||||
 | WE-LQS SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LQS SMT-Speicherdrossel | – | – | – | Bauform8040 | Betriebstemperatur -40 °C up to +125 °C | – | – | – | Länge8 mm | Breite8 mm | Höhe4.2 mm | – | – | Induktivität330 µH | Nennstrom660 mA | Sättigungsstrom0.9 A | Gleichstromwiderstand865 mΩ | Eigenresonanzfrequenz3.55 MHz | – | – | – | – | – | – |