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reference designRRP68150/RTP100E1P8G1FL-DSC | Demoboard EVB-RTP100E1P8G1FL-DSC

Renesas RRP68150/RTP100E1P8G1FL-DSC | Demoboard EVB-RTP100E1P8G1FL-DSC

RTP100E1P8G1FL-DSC Low Voltage GaN Evaluation Board

Overview

TopologyBuck Converter
Input voltage48 V
Output 112 V / 28 A
IC revision1

Description

The EVB-RTP100E1P8G1FL-DSC evaluation board demonstrates the performance advantages of low-voltage GaN technology in a high-efficiency synchronous buck converter. Featuring two RTP100E1P8G1FL-DSC 100V enhancement-mode (E-mode) gallium nitride (GaN) FETs in a half-bridge configuration and driven by the RRP68150 gate driver, the board provides a compact platform for evaluating high-frequency power conversion designs.The board enables evaluation of switching performance, efficiency, thermal behavior, and power density across a wide range of operating conditions. Integrated test points simplify waveform measurements and power-loss analysis, helping optimize power-stage layouts and demonstrate how low-voltage GaN technology can improve next-generation power conversion systems.

Features

Performance testing of low-voltage GaN over a wide range of operating conditionsFlexible and user-friendly buck converter evaluation boardEvaluate system performance using the RRP68150 gate driverHigh-frequency power conversion optimizationConvenient test points for waveform measurementSupports high-efficiency, high-power-density designs

Typical applications

  • Power supply

More information

Parts approved by Renesas

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Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
L(µH)
IRP,40K(A)
ISAT,30%(A)
RDC typ.(mΩ)
RDC max.(mΩ)
fres(MHz)
Mount
SamplesAvailability & Sample
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74439370047
SPECWE-XHMI SMT Power Inductor, 4.7 µH, 29.7 A

PCN pending

Due to a pending PCN, a modification of the component will be implemented soon. Please find the PCN below. If you have further questions please get in contact with our sales staff.

Simu­lation
Availability
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Downloads8 files

Status
ActiveProduction is active. Expected lifetime: >10 years.
iProduction is active. Expected lifetime: >10 years.
Product seriesWE-XHMI SMT Power Inductor
Inductance4.7 µH
Performance Rated Current29.7 A
Saturation Current @ 30%47.4 A
DC Resistance3.1 mΩ
DC Resistance3.41 mΩ
Self Resonant Frequency16 MHz
MountSMT 
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