IC manufacturers (103)
- All manufacturers
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (337)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (97)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (58)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Onsemi NTBG022N120M3S | Demoboard EVB for 1200 V SiC MOSFET M3S in D2PAK-7LD
Evaluation Board for 1200 V SiC MOSFET M3S in D2PAK-7LD showing Benefit of IMS PCB
Overview
| Topology | Other Topology |
| Input voltage | 800 V |
Description
This evaluation board supports evaluation of onsemi’s NTBG022N120M3S 22 m 1200 V SiC MOSFET in D2PAK−7LD working together with NCD57084 isolated gate drivers using a printed circuit board using IMS. These products are used in energyinfrastructure applications, such as PV inverters, UPS or EV chargers to improve efficiency and power density compared with IGBT or superjunction MOSFET solutions. This manual describes the board function, board layout and comparison of the IMS PCB thermal properties with the thermal properties of a standard FR4 board. Itincludes details of layout, schematics, and bill of materials.The evaluation board contains four SiC MOSFETs soldered onto an IMS PCB in a full−bridge topology. The gate driver stage consists of four NCD57084 high current galvanically isolated gate drivers. Thedriver provides 3 kV insulation between primary and secondary side. The gate drive voltage is supplied through an isolated DC/DC voltage source using the NCV3064.The evaluation board can be connected to an external controllerproviding PWM inputs and handling fault signals. Use of an externalsensor for over current and over voltage protection is recommended.
Features
- Low Thermal Resistance IMS PCB
- 4 Isolated Gate Drivers with 3 kV Insulation -On Board NTC for IMS Temperature Sensing
- Low Inductance PCB Layout
- Modular Pinout allows Evaluation of Multiple Topologies
Typical applications
- Uninterruptible Power Supplies (UPS), Switch Mode Power Supplies (SMPS)
- Solar Inverters, Energy Storage Systems
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | Tol. C | VR(V (DC)) | Size | Operating Temperature | DF(%) | RISO | Ceramic Type | L(mm) | W(mm) | H(mm) | Fl(mm) | Packaging | VIN(V) | VOut1(V) | VOut2(V) | VOut3(V) | Vaux(V) | PO(W) | CWW 1(pF) | L(µH) | ISAT(A) | fswitch(kHz) | n | Version | IC Reference | Pins | Type | Mount | IR(A) | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 50 V(DC), 220 pF, ±10% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 50 V(DC) | Capacitance220 pF | Capacitance±10% | Rated Voltage50 V (DC) | Size0603 | Operating Temperature -55 °C up to +125 °C | Dissipation Factor2.5 % | Insulation Resistance10 GΩ | Ceramic TypeX7R Class II | Length1.6 mm | Width0.8 mm | Height0.8 mm | Pad Dimension0.4 mm | Packaging7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | |||||
 | WR-BHD 2.54 mm Male, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWR-BHD 2.54 mm Male | – | – | – | – | Operating Temperature -40 °C up to +105 °C | – | Insulation Resistance1000 MΩ | – | Length25.44 mm | – | – | – | PackagingTray | – | – | – | – | – | – | – | – | – | – | – | VersionLow Profile | – | Pins14 | TypeStraight | MountTHT | Rated Current3 A | |||
 | WE-AGDT Auxiliary Gate Drive Transformer, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-AGDT Auxiliary Gate Drive Transformer | – | – | – | SizeEP7 | Operating Temperature -40 °C up to +130 °C | – | – | – | Length11.3 mm | Width10.95 mm | Height11.94 mm | – | – | Input Voltage 6 - 18 | Output Voltage 120 V | Output Voltage 25 V | Output Voltage 35 V | Auxiliary Voltage5 V | Total Output Power1.5 W | Interwinding Capacitance6.4 pF | Inductance42 µH | Saturation Current1.2 A | Switching Frequency 150 | Turns Ratio1.56:3.89:1:1:1 | VersionFlyback | IC ReferenceNCV(P)3064 | – | – | – | – |