IC manufacturers Nisshinbo Micro Device Inc.
IC manufacturers (103)
- All manufacturers
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (257)
- Divimath (8)
- Elmos AG (1)
- EPC (136)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (30)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (979)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (266)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (330)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (96)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (54)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (8)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Overview
| Topology | Buck Converter |
| Input voltage | -0.3-6.5 V |
| Switching frequency | 1080-1320 kHz |
| Output 1 | 3.3 V / 1 A |
| IC revision | 200604 |
Description
The RP402 Series are min. 0.6V input, CMOS-based PWM/VFM step-up DC/DC converters with synchronous rectifier. The RP402 have three switching control types, or PWM control, forced PWM control, and PWM/VFM auto change control. The RP402 includes a soft start circuit, a bypass switch, shutdown switch, an anti-ringing switch. By simply using with an inductor, a capacitor, and resistors (for output voltage adjustable type) as external components, a high-efficiency step-up DC/DC converter can be realized. The output voltage can be selected from the internally fixed type or externally adjustment is possible. In addition to SOT-23-5 package, a 2.0mm square DFN(PLP)2020-8 package is available. The RP402 are ideal for the applications powered by one-cell or two-cell alkaline, nickel-metal-hydride (NiMH) or one-cell Lithium-ion (Li+) batteries.
Features
- Low Voltage Start-up: Typ. 0.7 V
- Input Voltage Range: Fixed Output Voltage Type: 0.6 V to 4.8 V Adjustable Output Voltage Type: 0.6 V to 4.6 V
- High Efficiency: 94% (100 mA/ 5.0 V, VIN = 3.6 V, 25°C) 90% (1 mA/ 5.0 V, VIN = 3.6 V, 25°C)
- Output Current: 800 mA: VIN = 3.6 V, VOUT = 5.0 V
- LX Driver ON Resistance: NMOS/ PMOS: 0.20 Ω (VOUT = 5.0 V, 25°C)
- PWM Oscillator Frequency: 1.2 MHz (Normal PWM), 1.0 MHz (Forced PWM)
- Output Voltage Range: Fixed Output Voltage Type: 1.8 V to 5.5 V, 0.1 V step Adjustable Output Voltage Type: 1.8 V to 5.5 V (recommended)
- OVLO Detector Threshold: Typ. 5.1 V
- OVP Detector Threshold: Typ. 6.0 V
- LX Peak Current Limit: Typ. 1.5 A
- Latch Protection Delay Time: Typ. 3.3 ms (RP402Kxx1x, RP402Nxx1x) Typ. 4.1 ms (RP402Kxx2x)
- Soft-start Time: Typ. 0.5 ms
- EMI Suppression (Built-in Anti-ringing Switch) (RP402Kxx1x, RP402Nxx1x)
- Voltage Regulation at VIN > VOUT
- Zero Input Complete Shutdown at VIN = 0 V
- Input-to-Output Bypass Shutdown Option at CE = L (RP402xxxxC/ D/ G/ H)
- Ceramic Capacitor Capable
- Package: DFN(PLP)2020-8, SOT23-5
Typical applications
- MP3 Players, PDA, Digital Still Cameras, LCD Bias Supplies, GPS, USB-OTG, HDMI
- Portable Blood Pressure Meter, Wireless Handset
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | L(µH) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | fres(MHz) | IRP,40K(A) | Mount | IR(A) | ISAT(A) | RDC(mΩ) | RDC typ.(mΩ) | VOP(V) | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-LQS SMT Power Inductor, 2.2 µH, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-LQS SMT Power Inductor | Inductance2.2 µH | – | – | – | Self Resonant Frequency85 MHz | – | MountSMT | Rated Current1.8 A | Saturation Current1.7 A | DC Resistance50 mΩ | – | Operating Voltage120 V | ||||
 | WE-MAPI SMT Power Inductor, 2.2 µH, 2.75 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MAPI SMT Power Inductor | Inductance2.2 µH | Saturation Current @ 10%2.75 A | Saturation Current @ 30%4.85 A | DC Resistance172 mΩ | Self Resonant Frequency50 MHz | Performance Rated Current2.35 A | MountSMT | Rated Current1.4 A | Saturation Current3.9 A | – | DC Resistance150 mΩ | Operating Voltage80 V | ||||
 | WE-MAPI SMT Power Inductor, 2.2 µH, 3.6 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MAPI SMT Power Inductor | Inductance2.2 µH | Saturation Current @ 10%3.6 A | Saturation Current @ 30%6.1 A | DC Resistance115 mΩ | Self Resonant Frequency50 MHz | Performance Rated Current2.9 A | MountSMT | Rated Current1.8 A | Saturation Current5 A | – | DC Resistance100 mΩ | Operating Voltage80 V | ||||
 | WE-MAPI SMT Power Inductor, 2.2 µH, 2.5 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MAPI SMT Power Inductor | Inductance2.2 µH | Saturation Current @ 10%2.5 A | Saturation Current @ 30%4.2 A | DC Resistance108 mΩ | Self Resonant Frequency45 MHz | Performance Rated Current3 A | MountSMT | Rated Current1.8 A | Saturation Current3.5 A | – | DC Resistance94 mΩ | Operating Voltage80 V | ||||
 | WE-MAPI SMT Power Inductor, 2.2 µH, 2.75 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MAPI SMT Power Inductor | Inductance2.2 µH | Saturation Current @ 10%2.75 A | Saturation Current @ 30%5.55 A | DC Resistance80 mΩ | Self Resonant Frequency42 MHz | Performance Rated Current3.6 A | MountSMT | Rated Current2.4 A | Saturation Current4.3 A | – | DC Resistance67 mΩ | Operating Voltage80 V | ||||
 | WE-MAIA SMT Power Inductor, 2.2 µH, 2.75 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MAIA SMT Power Inductor | Inductance2.2 µH | Saturation Current @ 10%2.75 A | Saturation Current @ 30%4.85 A | DC Resistance172 mΩ | Self Resonant Frequency50 MHz | Performance Rated Current2.35 A | MountSMT | – | – | – | DC Resistance150 mΩ | – | ||||
| WE-MAIA SMT Power Inductor, 2.2 µH, 3.6 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MAIA SMT Power Inductor | Inductance2.2 µH | Saturation Current @ 10%3.6 A | Saturation Current @ 30%6.1 A | DC Resistance115 mΩ | Self Resonant Frequency50 MHz | Performance Rated Current2.9 A | MountSMT | Rated Current1.8 A | Saturation Current5 A | – | DC Resistance100 mΩ | – | ||||
| WE-MAIA SMT Power Inductor, 2.2 µH, 2.5 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MAIA SMT Power Inductor | Inductance2.2 µH | Saturation Current @ 10%2.5 A | Saturation Current @ 30%4.2 A | DC Resistance108 mΩ | Self Resonant Frequency45 MHz | Performance Rated Current3 A | MountSMT | – | – | – | DC Resistance94 mΩ | – | ||||
| WE-MAIA SMT Power Inductor, 2.2 µH, 2.75 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-MAIA SMT Power Inductor | Inductance2.2 µH | Saturation Current @ 10%2.75 A | Saturation Current @ 30%5.55 A | DC Resistance80 mΩ | Self Resonant Frequency42 MHz | Performance Rated Current3.6 A | MountSMT | – | – | – | DC Resistance67 mΩ | – | ||||
 | WE-LQSH SMT High Saturation Power Inductor, 2.2 µH, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-LQSH SMT High Saturation Power Inductor | Inductance2.2 µH | – | – | DC Resistance108 mΩ | Self Resonant Frequency46 MHz | – | MountSMT | Rated Current1.75 A | Saturation Current3.35 A | – | DC Resistance90 mΩ | – |