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Nexperia GAN039-650NBB | Demoboard NX-HB-GAN039-BSCUL
NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs
Overview
| Topology | Half-Bridge Converter symmetrical isolated |
| Input voltage | 10-400 V |
| IC revision | 1.3 |
Description
The NX-HB-GAN039-BSCUL bottom-side cooled half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switchingcharacteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high / low level inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 kW dependent upon cooling, ambient temperature and switching frequency. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.
Features
- Very low switching losses
- Rugged gate with high threshold voltage, Vth = 4 V, enables single supply gate drive voltage 0 V to 10 - 12 V.
- Very good QGD/QGS << 1 ratio, protects against parasitic turn on
- Minimal reverse-recovery
- Very low Rth
- Best in class third-quadrant off-state conduction performance for wide-bandgap devices
- Very low package inductance (≈1.3 nH @ 100 MHz)
Typical applications
- Energy Storage Systems
- Servo Drives, Server/Telecom PSU,Welding Inverters
- Solar Inverters
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | Tol. C | VR(V (DC)) | Size | Qmin. | DF(%) | RISO | Ceramic Type | L(mm) | W(mm) | H(mm) | Fl(mm) | Packaging | Operating Temperature | Q(%) | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 100 V(DC), 100 pF, ±5% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 100 V(DC) | Capacitance100 pF | Capacitance±5% | Rated Voltage100 V (DC) | Size0603 | Q-Factor [1]1000 | – | Insulation Resistance10 GΩ | Ceramic TypeNP0 Class I | Length1.6 mm | Width0.8 mm | Height0.8 mm | Pad Dimension0.4 mm | Packaging7" Tape & Reel | Operating Temperature -55 °C up to +125 °C | Q-Factor1000 % | |||||
 | WCAP-CSMH Mid and High Voltage, 10 nF, ±10% | Downloads8 files | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSMH Mid and High Voltage | Capacitance10 nF | Capacitance±10% | Rated Voltage630 V (DC) | Size1206 | – | Dissipation Factor2.5 % | Insulation Resistance10 GΩ | Ceramic TypeX7R Class II | Length3.2 mm | Width1.6 mm | Height1.25 mm | Pad Dimension0.6 mm | Packaging7" Tape & Reel | Operating Temperature -55 °C up to +125 °C | Q-Factor600 % | |||
| WCAP-CSGP MLCCs 100 V(DC), 100 nF, ±10% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 100 V(DC) | Capacitance100 nF | Capacitance±10% | Rated Voltage100 V (DC) | Size0603 | Q-Factor [1]600 | Dissipation Factor5 % | Insulation Resistance1 GΩ | Ceramic TypeX7R Class II | Length1.6 mm | Width0.8 mm | Height0.8 mm | Pad Dimension0.4 mm | Packaging7" Tape & Reel | Operating Temperature -55 °C up to +125 °C | – | |||||
| WCAP-CSGP MLCCs 50 V(DC), 1 µF, ±10% | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-CSGP MLCCs 50 V(DC) | Capacitance1 µF | Capacitance±10% | Rated Voltage50 V (DC) | Size0805 | Q-Factor [1]600 | Dissipation Factor10 % | Insulation Resistance0.1 GΩ | Ceramic TypeX7R Class II | Length2 mm | Width1.25 mm | Height1.25 mm | Pad Dimension0.5 mm | Packaging7" Tape & Reel | Operating Temperature -55 °C up to +125 °C | – | |||||
750371702 | Inductor, –, – | Simulation– | Downloads– | Status Activei| Production is active. Expected lifetime: >10 years. | Product series Inductor | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – |