Nexperia GAN039-650NBB | Demoboard NX-HB-GAN039-BSCUL

Beschreibung

The NX-HB-GAN039-BSCUL bottom-side cooled half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switchingcharacteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high / low level inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 kW dependent upon cooling, ambient temperature and switching frequency. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.

Eigenschaften

• Very low switching losses
• Rugged gate with high threshold voltage, Vth = 4 V, enables single supply gate drive voltage 0 V to 10 - 12 V.
• Very good QGD/QGS << 1 ratio, protects against parasitic turn on
• Minimal reverse-recovery
• Very low Rth
• Best in class third-quadrant off-state conduction performance for wide-bandgap devices
• Very low package inductance (≈1.3 nH @ 100 MHz)

Typische Anwendungen

• Energy Storage Systems
• Servo Drives, Server/Telecom PSU,Welding Inverters
• Solar Inverters

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers