Microchip PIC16F15345 | Demoboard High-Voltage E-Fuse

Description

Our SiC MOSFETs are in TO-247 4-lead packages. These packages provide access to the Kelvin source, which is wire bonded directly to the die, bypassing the effect of di/dt in the source inductance. This provides greater control over the SiC MOSFET, especially during fast, high-current transient conditions.The circuit layout includes slots and sufficient creepage distance to accommodate both 700V and 1200V SiC MOSFETs. Depending on the target voltage and current rating, you can populate the high-voltage auxiliary E-Fuse design with the devices as shown in the table below.

Features

• Configurable current limit profile
• LIN communication interface for configurability and diagnostics
• High-side or low-side drive configuration
• Short-circuit withstand time: 10 µs
• Rated current: 30A
• Low-voltage operating range: 9V to 16V
• High-voltage operating range: 200V to 900V
• Operating temperature range: −40°C to 85°C
• Use in automotive applications
• Automotive hardware design that uses only AEC-qualified components
• Six variants of this high-voltage auxiliary E-Fuse design that support 400V and 800V bus voltages and continuous current ratings of 10A, 20A and 30A
• Up to 20 kHz switching frequency

Typical applications

• DC solid-state circuit breakers
• HEV and EV

More information

• Datasheet
• IC product information