IC-Hersteller Microchip
IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (136)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (266)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (333)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (96)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (54)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Details
| Topologie | Gegentaktflusswandler |
| Eingangsspannung | 5 V |
| Ausgang 1 | 24.8 V |
| Ausgang 2 | 12.4 V |
| IC-Revision | A |
Beschreibung
Our SiC MOSFETs are in TO-247 4-lead packages. These packages provide access to the Kelvin source, which is wire bonded directly to the die, bypassing the effect of di/dt in the source inductance. This provides greater control over the SiC MOSFET, especially during fast, high-current transient conditions.The circuit layout includes slots and sufficient creepage distance to accommodate both 700V and 1200V SiC MOSFETs. Depending on the target voltage and current rating, you can populate the high-voltage auxiliary E-Fuse design with the devices as shown in the table below.
Eigenschaften
- Configurable current limit profile
- LIN communication interface for configurability and diagnostics
- High-side or low-side drive configuration
- Short-circuit withstand time: 10 µs
- Rated current: 30A
- Low-voltage operating range: 9V to 16V
- High-voltage operating range: 200V to 900V
- Operating temperature range: −40°C to 85°C
- Use in automotive applications
- Automotive hardware design that uses only AEC-qualified components
- Six variants of this high-voltage auxiliary E-Fuse design that support 400V and 800V bus voltages and continuous current ratings of 10A, 20A and 30A
- Up to 20 kHz switching frequency
Typische Anwendungen
- DC solid-state circuit breakers
- HEV and EV
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR(V (DC)) | Bauform | Betriebstemperatur | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | H(mm) | Fl(mm) | Verpackung | Vin | VOut1(V (DC)) | IOut1(A) | Isolierungstyp | fswitch(kHz) | ∫Udt(Vµs) | NPRI : NSEC | L(µH) | VT(V (AC)) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 50 V(DC), 10 nF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 50 V(DC) | Kapazität10 nF | Kapazität±10% | Nennspannung50 V (DC) | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor2.5 % | Isolationswiderstand10 GΩ | KeramiktypX7R Klasse II | Länge1.6 mm | Breite0.8 mm | Höhe0.8 mm | Pad Dimension0.4 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | |||||
 | WE-PPTI Push-Pull Transformers, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PPTI Push-Pull Transformers | – | – | – | Bauform1006 | Betriebstemperatur -40 °C up to +125 °C | – | – | – | Länge6.73 mm | Breite10.2 mm | Höhe4.19 mm | – | VerpackungTape and Reel | Input Voltage 5 V (DC) | Ausgangsspannung 15 V (DC) | Ausgangsstrom 10.6 A | IsolierungstypFunktional | Switching Frequency 300 - 620 | Spannung-µSekunde11 Vµs | Übersetzungsverhältnis1:1.3 | Induktivität475 µH | Prüfspannung2500 V (AC) | MontageartSMT |