IC manufacturers Microchip

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Microchip MCP1641X | Demoboard Low IQ Boost with Programmable Low Battery

Low IQ Boost Converter with Programmable Low Battery, UVLO and Automatic Input-to-Output Bypass Operation

Overview

TopologyBoost Converter
Input voltage0.8-5.25 V
Output 15.25 V

Description

The MCP1641X Step-up DC-DC Converters family provides an automatic input-to-output voltage bypass operation, which helps optimize battery utilization and achieve high efficiency, while the nominal voltage of fresh batteries remains in the same range with the converter’s output value. The MCP1641X can be powered by either single-cell, two-cell alkaline/NiMH batteries or single-cell Li-Ion/Li-Polymer batteries. A low-voltage designed architecture allows the regulator to start up without high inrush current or output voltage overshoot from a low input voltage. The start-up voltage is easily programmed by a resistive divider connected to the UVLO pin. If the resistive divider is not used, the default start-up voltage is 0.85V.The 0.8V built-in UVLOSTOP helps prevent deep discharge of the alkaline battery, which can cause battery leakage. An open-drain Low Battery Output (LBO) pin warns the user to replace the battery if the input voltage ramps down to the programmed UVLOSTART value. The MCP1641X family introduces an additional safety feature to a low-voltage boost converter: Overtemperature Output. Devices, such as personal care products, Bluetooth headsets or toys, will benefit from the combined Power Good and Die Overtemperature (PGT) output, which flags a warning signal when the output voltage level drops within 10% or the die temperature exceeds the +75°C (typical).(1) Both functions are implemented in the MCP16411/2/3/4 devices (on the same pin, PGT), while the MCP16415/6/7/8 devices have only the Power Good option.

Features

  • Input Voltage Range: 0.8V (after Start-up) to 5.25V
  • Low Device Quiescent Current: 5 µA (typical), PFM Mode (not switching)
  • Up to 96% Efficiency
  • 1A Typical Inductor Peak Current Limit: -IOUT > 170 mA at 2V VOUT, 1.2V VIN -IOUT > 200 mA at 3.3V VOUT, 1.5V VIN -IOUT > 600 mA at 5.0V VOUT, 3.6V VIN
  • Adjustable Output Voltage Range
  • Automatic Input-to-Output Bypass Operation
  • Selectable Switching Mode:
  • PWM operation: 500 kHz (MCP16412/4/6/8)
  • Automatic PFM/PWM operation (MCP16411/3/5/7)
  • Programmable Undervoltage Lockout (UVLO)
  • Programmable Low Battery Output (LBO)
  • Selectable Status Indicator:
  • Power Good and Die Overtemperature output (MCP16411/2/3/4)
  • Power Good output (MCP16415/6/7/8)
  • Internal Synchronous Rectifier
  • Internal Compensation
  • Inrush Current Limiting and Internal Soft Start
  • Low Noise, Anti-Ringing Control
  • Thermal Shutdown
  • Selectable Shutdown States:
  • Output discharge option (MCP16411/2/5/6)
  • Input-to-output bypass option (MCP16413/4/7/8)
  • Shutdown Current: 2.3 µA (typical)
  • Available Packages:
  • 10-Lead MSOP
  • 10-Lead 3 mm x 3 mm TDFN

Typical applications

  • Single-Cell or Two-Cell Powered IoT Devices, Bluetooth® Headsets, Remote Controllers,Portable Instruments, Wireless Sensors, Data Loggers.
  • Personal and Health Care Products

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
L(µH)
ISAT,10%(A)
ISAT,30%(A)
RDC max.(mΩ)
fres(MHz)
IRP,40K(A)
Mount
IR(A)
ISAT(A)
RDC(mΩ)
RDC typ.(mΩ)
VOP(V)
Version
Samples
WE-LQS SMT Power Inductor, 2.2 µH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance2.2 µH
Self Resonant Frequency83 MHz
MountSMT 
Rated Current1.65 A
Saturation Current1.9 A
DC Resistance80 mΩ
Operating Voltage120 V
WE-MAPI SMT Power Inductor, 2.2 µH, 1.4 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance2.2 µH
Saturation Current @ 10%1.4 A
Saturation Current @ 30%2.8 A
DC Resistance302 mΩ
Self Resonant Frequency60 MHz
Performance Rated Current1.65 A
MountSMT 
Rated Current1.34 A
Saturation Current2.2 A
DC Resistance252 mΩ
Operating Voltage80 V
VersionSMT 
WE-MAPI SMT Power Inductor, 2.2 µH, 1.85 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance2.2 µH
Saturation Current @ 10%1.85 A
Saturation Current @ 30%3.65 A
DC Resistance141 mΩ
Self Resonant Frequency57 MHz
Performance Rated Current2.45 A
MountSMT 
Rated Current1.6 A
Saturation Current2.9 A
DC Resistance123 mΩ
Operating Voltage80 V
VersionSMT 
WE-MAIA SMT Power Inductor, 2.2 µH, 1.4 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance2.2 µH
Saturation Current @ 10%1.4 A
Saturation Current @ 30%2.8 A
DC Resistance302 mΩ
Self Resonant Frequency60 MHz
Performance Rated Current1.65 A
MountSMT 
DC Resistance252 mΩ
VersionSMT 
WE-MAIA SMT Power Inductor, 2.2 µH, 2 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance2.2 µH
Saturation Current @ 10%2 A
Saturation Current @ 30%3.55 A
DC Resistance176 mΩ
Self Resonant Frequency60 MHz
Performance Rated Current2.2 A
MountSMT 
DC Resistance147 mΩ
VersionSMT 
WE-LQS SMT Power Inductor, 4.7 µH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance4.7 µH
Self Resonant Frequency60 MHz
MountSMT 
Rated Current1.55 A
Saturation Current1.3 A
DC Resistance91 mΩ
Operating Voltage120 V
WE-SPC SMT Power Inductor, 4.7 µH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance4.7 µH
DC Resistance103 mΩ
Self Resonant Frequency38 MHz
MountSMT 
Rated Current1.55 A
Saturation Current2.9 A
DC Resistance86.8 mΩ
VersionSMT 
WE-MAPI SMT Power Inductor, 4.7 µH, 1.4 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance4.7 µH
Saturation Current @ 10%1.4 A
Saturation Current @ 30%2.65 A
DC Resistance345 mΩ
Self Resonant Frequency35 MHz
Performance Rated Current1.45 A
MountSMT 
Rated Current1 A
Saturation Current2.1 A
DC Resistance300 mΩ
Operating Voltage80 V
VersionSMT 
WE-MAPI SMT Power Inductor, 4.7 µH, 2.6 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance4.7 µH
Saturation Current @ 10%2.6 A
Saturation Current @ 30%4.75 A
DC Resistance307.8 mΩ
Self Resonant Frequency30 MHz
Performance Rated Current1.7 A
MountSMT 
Rated Current1.1 A
Saturation Current3.8 A
DC Resistance267.7 mΩ
Operating Voltage80 V
VersionSMT 
WE-MAIA SMT Power Inductor, 4.7 µH, 1.65 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance4.7 µH
Saturation Current @ 10%1.65 A
Saturation Current @ 30%3 A
DC Resistance409 mΩ
Self Resonant Frequency35 MHz
Performance Rated Current1.45 A
MountSMT 
DC Resistance356 mΩ
VersionSMT 
WE-MAIA SMT Power Inductor, 4.7 µH, 1.4 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance4.7 µH
Saturation Current @ 10%1.4 A
Saturation Current @ 30%2.65 A
DC Resistance345 mΩ
Self Resonant Frequency35 MHz
Performance Rated Current1.45 A
MountSMT 
DC Resistance300 mΩ
VersionSMT