IC manufacturers Infineon Technologies

IC manufacturers (103)

Infineon Technologies 2ED2184 | Demoboard EVAL-2ED2184

650 V half-bridge gate driver with integrated bootstrap diode

Overview

TopologyMotor Drive
Input voltage25 V
IC revision01

Description

The EVAL-2ED2184 comes with the gate driver IC, 2ED2184S06F and two MOSFETs, IPD60R280P7, in half bridge configuration. This board is designed to test basic functionalities and highlight features of the Infineon silicon-on-insulator (SOI) gate driver. The user can test PWM input-output performance, check propagation delay, current capability, and high switching frequency performance. The board can be used to do a double pulse test.

Features

  • Unique Infineon Thin-Film-Silicon on Insulator (SOI)-Technology VS_OFFSET = 650 V max
  • Negative VS transient immunity of 100 V
  • Floating channel designed for bootstrap operation VCC = 10 V to 20 V
  • Operating voltages (VS node) upto + 650 V Delay Matching 35 ns max.
  • Maximum bootstrap voltage (VB node) of + 675 V Propogation Delay = 200 ns
  • Integrated ultra-fast, low resistance bootstrap diode tON / tOFF (typ.) = 600 ns/ 200 ns
  • Logic Operational up to –11 V on VS Pin
  • Negative Voltage Tolerance on Inputs of –5 V
  • Independent under voltage lockout for both channels
  • Schmitt trigger inputs with hysteresis
  • 3.3 V, 5 V and 15 V input logic compatible
  • Maximum supply voltage of 25 V
  • Dual package options of DSO-8 and DSO-14
  • High and Low Voltage Pins Separated for Maximum Creepage and Clearance (2ED21844S06J version)
  • Separate logic and power ground with the 2ED21844S06J version
  • Shutdown input turns off both channels
  • Interlocking function with internal 400 ns dead time and programmable up to 5 us with external resistor (2ED21844S06J only)
  • RoHS compliant

Typical applications

  • Home appliances
  • Motor control, Power conversion

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
Pins
PCB/Cable/Panel
Modularity
Type
Wire Section
C
VR(V (DC))
VR 2(V (DC))
dV/dt(V/µs)
DF @ 1 kHz(%)
RISO
Pitch(mm)
L(mm)
W(mm)
H(mm)
Packaging
Endurance(h)
IRIPPLE(mA)
ILeak(µA)
DF(%)
Ø D(mm)
Mount
G(mm)
IR(A)
Working Voltage(V (AC))
Operating Temperature
Samples
WR-TBL Series 2509 - 9.52 mm Horizontal Entry Modular w. Rising Cage Clamp, 3, Rising Cage Clamp
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Pins
PCB/Cable/PanelPCB 
ModularityYes 
TypeHorizontal 
Wire Section 10 to 30 (AWG) 5.26 to 0.0509 (mm²)
Pitch9.52 mm
Length28.56 mm
PackagingBox 
MountTHT 
Rated Current32 A
Working Voltage750 V (AC)
Operating Temperature -30 °C up to +120 °C
WR-PHD Pin Header - Single, 7, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Pins
TypeStraight 
Insulation Resistance1000 MΩ
Pitch2.54 mm
Length17.78 mm
PackagingBag 
MountTHT 
Rated Current3 A
Working Voltage250 V (AC)
Operating Temperature -40 °C up to +105 °C
WCAP-AT1H Aluminum Electrolytic Capacitors, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance22 µF
Rated Voltage25 V (DC)
Pitch2 mm
Length11 mm
PackagingAmmopack 
Endurance 5000
Ripple Current100 mA
Leakage Current5.5 µA
Dissipation Factor14 %
Diameter5 mm
WCAP-FTBE Film Capacitors, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance100 nF
Rated Voltage630 V (DC)
Rated Voltage 2504 V (DC)
Rate of Voltage Rise28 V/µs
Dissipation Factor1 %
Insulation Resistance9 GΩ
Pitch15 mm
Length18 mm
Width6 mm
Height12 mm
PackagingCarton 
Pin length4 mm
Operating Temperature -40 °C up to +85 °C
WCAP-AT1H Aluminum Electrolytic Capacitors, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance33 µF
Rated Voltage450 V (DC)
Pitch7.5 mm
Length21 mm
PackagingAmmopack 
Endurance 10000
Ripple Current883 mA
Leakage Current694 µA
Dissipation Factor20 %
Diameter18 mm