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Infineon Technologies 2ED2106S06F | Demoboard EVAL-2ED2106
Evaluation Board for 2ED2106S06F, 650 V, 0.7 A high-side and low-side gate driver with integrated bootstrap diode
Overview
| Topology | Other Topology |
| IC revision | 01-00 |
Description
The EVAL-2ED2106 comes with the gate driver IC, 2ED2106S06F and two MOSFETs, IPD60R360P7, in half bridge configuration. This board is designed to test basic functionalities and highlight features of the Infineon silicon-on-insulator (SOI)gate driver. The user can test PWM input-output performance, check propagation delay, current capability, and high switching frequency performance. The board can be used to do a double pulse test.
Features
- Operating voltages up to + 650 V
- Using Infineon SOI-technology
- Negative VS transient immunity of 100 V
- Integrated low ohmic bootstrap diode
- Designed for bootstrap operation
- Maximum supply voltage of 25 V
- Under voltage lockout (UVLO)
- 200 ns propagation delay
- Logic operational up to –11 V on VS Pin
Typical applications
- Home appliances
- Motor Control
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | Pins | PCB/Cable/Panel | Modularity | Type | Wire Section | C | VR(V (DC)) | VR 2(V (DC)) | dV/dt(V/µs) | DF @ 1 kHz(%) | RISO | Pitch(mm) | L(mm) | W(mm) | H(mm) | Packaging | Endurance(h) | IRIPPLE(mA) | ILeak(µA) | DF(%) | Ø D(mm) | Mount | G(mm) | IR(A) | Working Voltage(V (AC)) | Operating Temperature | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WR-TBL Series 2509 - 9.52 mm Horizontal Entry Modular w. Rising Cage Clamp, 3, Rising Cage Clamp | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Pins3 | PCB/Cable/PanelPCB | ModularityYes | TypeHorizontal | Wire Section 10 to 30 (AWG) 5.26 to 0.0509 (mm²) | – | – | – | – | – | – | Pitch9.52 mm | Length28.56 mm | – | – | PackagingBox | – | – | – | – | – | MountTHT | – | Rated Current32 A | Working Voltage750 V (AC) | Operating Temperature -30 °C up to +120 °C | ||||
 | WR-PHD Pin Header - Single, 7, – | Simulation– | Downloads7 files | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWR-PHD Pin Header - Single | Pins7 | – | – | TypeStraight | – | – | – | – | – | – | Insulation Resistance1000 MΩ | Pitch2.54 mm | Length17.78 mm | – | – | PackagingBag | – | – | – | – | – | MountTHT | – | Rated Current3 A | Working Voltage250 V (AC) | Operating Temperature -40 °C up to +105 °C | ||
 | WCAP-AT1H Aluminum Electrolytic Capacitors, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-AT1H Aluminum Electrolytic Capacitors | – | – | – | – | – | Capacitance22 µF | Rated Voltage25 V (DC) | – | – | – | – | Pitch2 mm | Length11 mm | – | – | PackagingAmmopack | Endurance 5000 | Ripple Current100 mA | Leakage Current5.5 µA | Dissipation Factor14 % | Diameter5 mm | – | – | – | – | – | ||||
 | WCAP-FTBE Film Capacitors, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-FTBE Film Capacitors | – | – | – | – | – | Capacitance100 nF | Rated Voltage630 V (DC) | Rated Voltage 2504 V (DC) | Rate of Voltage Rise28 V/µs | Dissipation Factor1 % | Insulation Resistance9 GΩ | Pitch15 mm | Length18 mm | Width6 mm | Height12 mm | PackagingCarton | – | – | – | – | – | – | Pin length4 mm | – | – | Operating Temperature -40 °C up to +85 °C | ||||
| WCAP-AT1H Aluminum Electrolytic Capacitors, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWCAP-AT1H Aluminum Electrolytic Capacitors | – | – | – | – | – | Capacitance33 µF | Rated Voltage450 V (DC) | – | – | – | – | Pitch7.5 mm | Length21 mm | – | – | PackagingAmmopack | Endurance 10000 | Ripple Current883 mA | Leakage Current694 µA | Dissipation Factor20 % | Diameter18 mm | – | – | – | – | – |