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Infineon Technologies 2ED2106S06F | Demoboard EVAL-2ED2106
Evaluation Board for 2ED2106S06F, 650 V, 0.7 A high-side and low-side gate driver with integrated bootstrap diode
Details
| Topologie | Sonstige Topologie |
| IC-Revision | 01-00 |
Beschreibung
The EVAL-2ED2106 comes with the gate driver IC, 2ED2106S06F and two MOSFETs, IPD60R360P7, in half bridge configuration. This board is designed to test basic functionalities and highlight features of the Infineon silicon-on-insulator (SOI)gate driver. The user can test PWM input-output performance, check propagation delay, current capability, and high switching frequency performance. The board can be used to do a double pulse test.
Eigenschaften
- Operating voltages up to + 650 V
- Using Infineon SOI-technology
- Negative VS transient immunity of 100 V
- Integrated low ohmic bootstrap diode
- Designed for bootstrap operation
- Maximum supply voltage of 25 V
- Under voltage lockout (UVLO)
- 200 ns propagation delay
- Logic operational up to –11 V on VS Pin
Typische Anwendungen
- Home appliances
- Motor Control
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | Pins | PCB/Kabel/Panel | Modularity | Typ | Wire Section | C | VR(V (DC)) | VR 2(V (DC)) | dV/dt(V/µs) | DF @ 1 kHz(%) | RISO | Raster(mm) | L(mm) | B(mm) | H(mm) | Verpackung | Endurance(h) | IRIPPLE(mA) | ILeak(µA) | DF(%) | Ø D(mm) | Montageart | G(mm) | IR(A) | Arbeitsspannung(V (AC)) | Betriebstemperatur | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WR-TBL Serie 2509 - 9.52 mm Horizontal Entry Modular w. Rising Cage Clamp, 3, Käfigzugklemme | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Pins3 | PCB/Kabel/PanelPCB | ModularityJa | TypHorizontal | Wire Section 10 to 30 (AWG) 5.26 to 0.0509 (mm²) | – | – | – | – | – | – | Raster9.52 mm | Länge28.56 mm | – | – | VerpackungKarton | – | – | – | – | – | MontageartTHT | – | Nennstrom32 A | Arbeitsspannung750 V (AC) | Betriebstemperatur -30 °C up to +120 °C | ||||
 | WR-PHD Stiftleisten - Einreihig, 7, – | Simulation– | Downloads7 Dateien | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten - Einreihig | Pins7 | – | – | TypGerade | – | – | – | – | – | – | Isolationswiderstand1000 MΩ | Raster2.54 mm | Länge17.78 mm | – | – | VerpackungBeutel | – | – | – | – | – | MontageartTHT | – | Nennstrom3 A | Arbeitsspannung250 V (AC) | Betriebstemperatur -40 °C up to +105 °C | ||
 | WCAP-AT1H Aluminium-Elektrolytkondensatoren, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-AT1H Aluminium-Elektrolytkondensatoren | – | – | – | – | – | Kapazität22 µF | Nennspannung25 V (DC) | – | – | – | – | Raster2 mm | Länge11 mm | – | – | VerpackungAmmopack | Endurance 5000 | Rippelstrom100 mA | Leckstrom5.5 µA | Verlustfaktor14 % | Durchmesser5 mm | – | – | – | – | – | ||||
 | WCAP-FTBE Folienkondensatoren, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-FTBE Folienkondensatoren | – | – | – | – | – | Kapazität100 nF | Nennspannung630 V (DC) | Nennspannung 2504 V (DC) | Spannungsanstiegsgeschwindigkeit28 V/µs | Verlustfaktor1 % | Isolationswiderstand9 GΩ | Raster15 mm | Länge18 mm | Breite6 mm | Höhe12 mm | VerpackungKarton | – | – | – | – | – | – | Pin Länge4 mm | – | – | Betriebstemperatur -40 °C up to +85 °C | ||||
| WCAP-AT1H Aluminium-Elektrolytkondensatoren, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-AT1H Aluminium-Elektrolytkondensatoren | – | – | – | – | – | Kapazität33 µF | Nennspannung450 V (DC) | – | – | – | – | Raster7.5 mm | Länge21 mm | – | – | VerpackungAmmopack | Endurance 10000 | Rippelstrom883 mA | Leckstrom694 µA | Verlustfaktor20 % | Durchmesser18 mm | – | – | – | – | – |